Philips BLF2022-30 Technical data

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DATA SH EET

M3D750

BLF2022-30

UHF power LDMOS transistor

Product specification
Supersedes data of 2002 Dec 19

2003 Feb 24

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

FEATURES

• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 240 mA:

– Output power = 3.5 W (AV)
– Gain = 12.9 dB
– Efficiency = 16.5%
– ACPR = −45 dBc at 3.84 MHz
–dim = −42 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (2000 to 2200 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.

PINNING - SOT608A

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

1

2

Top view

3

MBL290

DESCRIPTION

Fig.1 Simplified outline (SOT608A).

30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA

Typical RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

2-tone, class-AB f
two-carrier W-CDMA test

model 1, 64 channels

f

(MHz)

= 2170; f2= 2170.1 28 240 30 (PEP) 12.6 34.3 −29.5 −

1

f

= 2155; f2= 2165 28 270 3.5 (AV) 12.9 16.5 −42 −45

1

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

(dBc)

im

ACLR

(dBc)

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

5

2003 Feb 24 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

Notes

1. Thermal resistance is determined under specified RF operating conditions.

drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 4.5 A
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to heatsink Th=25°C; note 1 1.85 K/W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

rs

drain-source breakdown voltage VGS= 0; ID= 0.7 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID=70mA 4.5 − 5.5 V
drain-source leakage current VGS= 0; VDS=28V −−5µA
on-state drain current VGS=V

+9V; VDS=10V 9 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−11 nA
forward transconductance VDS= 10 V; ID= 2.5 A − 2 − S
drain-source on-state resistance VGS=V

+9V; ID= 2.5 A − 0.3 −Ω

GSth

feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 1.7 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

2-tone, class-AB f

= 2170; f2= 2170.1 28 240 30 (PEP) >11 >30 ≤−25

1

f

(MHz)

=25°C; R

h

V

DS

(V)

= 1.85 K/W; unless otherwise specified.

th j-c

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF2022-30 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V

= 28 V; IDQ= 240 mA; PL= 30 W; f = 2170 MHz.

DS

2003 Feb 24 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

15

handbook, halfpage

G

G

p

(dB)

10

5

0

02010 30 40 50

VDS= 28 V; IDQ= 240 mA; Th≤ 25 °C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

p

η

D

PL (PEP) (W)

MLD935

Fig.2 Powergainanddrainefficiencyasfunctions

of peak envelope load power; typical
values.

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20
d

3

d

−40

−60

−80

02010 30 40 50

VDS= 28 V; IDQ= 240 mA; Th≤ 25 °C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

5

d

7

PL (PEP) (W)

MLD936

Fig.3 Intermodulation distortion as a function of

peak envelope load power; typical values.

15

handbook, halfpage

G

p

(dB)

10

5

0

02010 30 40 50

VDS= 28 V; Th≤ 25 °C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

(1) I

= 290 mA.

DQ

(2) IDQ= 240 mA.

(1)

(2)

(3)

= 190 mA.

(3) I

DQ

(4) IDQ= 190 mA.

G

p

η

D

(4)

PL (PEP) (W)

MLD937

(6)(5)

(5) IDQ= 240 mA.
(6) IDQ= 290 mA.

Fig.4 Powergainanddrainefficiencyasfunctions

of peak envelope load power; typical
values.

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20

(1)

−40

−60

−80

02010 30 40 50

VDS= 28 V; Th≤ 25 °C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

(1) IDQ= 190 mA. (2) IDQ= 240 mA. (3) IDQ= 290 mA.

(2)
(3)

PL (PEP) (W)

MLD938

Fig.5 Third order intermodulation distortion as a

function of peak envelope load power;
typical values.

2003 Feb 24 4