Philips BLF2022-30 Technical data

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DATA SH EET

M3D750

BLF2022-30

UHF power LDMOS transistor

Product specification
Supersedes data of 2002 Dec 19

2003 Feb 24

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

FEATURES

• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 240 mA:

– Output power = 3.5 W (AV)
– Gain = 12.9 dB
– Efficiency = 16.5%
– ACPR = −45 dBc at 3.84 MHz
–dim = −42 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (2000 to 2200 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.

PINNING - SOT608A

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

1

2

Top view

3

MBL290

DESCRIPTION

Fig.1 Simplified outline (SOT608A).

30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA

Typical RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

2-tone, class-AB f
two-carrier W-CDMA test

model 1, 64 channels

f

(MHz)

= 2170; f2= 2170.1 28 240 30 (PEP) 12.6 34.3 −29.5 −

1

f

= 2155; f2= 2165 28 270 3.5 (AV) 12.9 16.5 −42 −45

1

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

(dBc)

im

ACLR

(dBc)

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

5

2003 Feb 24 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

Notes

1. Thermal resistance is determined under specified RF operating conditions.

drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 4.5 A
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to heatsink Th=25°C; note 1 1.85 K/W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

rs

drain-source breakdown voltage VGS= 0; ID= 0.7 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID=70mA 4.5 − 5.5 V
drain-source leakage current VGS= 0; VDS=28V −−5µA
on-state drain current VGS=V

+9V; VDS=10V 9 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−11 nA
forward transconductance VDS= 10 V; ID= 2.5 A − 2 − S
drain-source on-state resistance VGS=V

+9V; ID= 2.5 A − 0.3 −Ω

GSth

feedback capacitance VGS= 0; VDS= 28 V; f = 1 MHz − 1.7 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

2-tone, class-AB f

= 2170; f2= 2170.1 28 240 30 (PEP) >11 >30 ≤−25

1

f

(MHz)

=25°C; R

h

V

DS

(V)

= 1.85 K/W; unless otherwise specified.

th j-c

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF2022-30 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V

= 28 V; IDQ= 240 mA; PL= 30 W; f = 2170 MHz.

DS

2003 Feb 24 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

15

handbook, halfpage

G

G

p

(dB)

10

5

0

02010 30 40 50

VDS= 28 V; IDQ= 240 mA; Th≤ 25 °C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

p

η

D

PL (PEP) (W)

MLD935

Fig.2 Powergainanddrainefficiencyasfunctions

of peak envelope load power; typical
values.

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20
d

3

d

−40

−60

−80

02010 30 40 50

VDS= 28 V; IDQ= 240 mA; Th≤ 25 °C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

5

d

7

PL (PEP) (W)

MLD936

Fig.3 Intermodulation distortion as a function of

peak envelope load power; typical values.

15

handbook, halfpage

G

p

(dB)

10

5

0

02010 30 40 50

VDS= 28 V; Th≤ 25 °C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

(1) I

= 290 mA.

DQ

(2) IDQ= 240 mA.

(1)

(2)

(3)

= 190 mA.

(3) I

DQ

(4) IDQ= 190 mA.

G

p

η

D

(4)

PL (PEP) (W)

MLD937

(6)(5)

(5) IDQ= 240 mA.
(6) IDQ= 290 mA.

Fig.4 Powergainanddrainefficiencyasfunctions

of peak envelope load power; typical
values.

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20

(1)

−40

−60

−80

02010 30 40 50

VDS= 28 V; Th≤ 25 °C;

= 2170 MHz; f2= 2170.1 MHz.

f

1

(1) IDQ= 190 mA. (2) IDQ= 240 mA. (3) IDQ= 290 mA.

(2)
(3)

PL (PEP) (W)

MLD938

Fig.5 Third order intermodulation distortion as a

function of peak envelope load power;
typical values.

2003 Feb 24 4

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

15

handbook, halfpage

G

p

(dB)

10

5

0

0426810

Two-carrier W-CDMA performance.
VDS= 28 V; IDQ= 270 mA; Th≤ 25 °C; f1= 2170 MHz.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;

peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.

G

p

η

D

MLD940

P

(AV) (W)

L

Fig.6 Powergainanddrainefficiencyasfunctions

of average load power; typical values.

30

20

10

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20

d

−40

−60

0426810

Two-carrier W-CDMA performance.
VDS= 28 V; IDQ= 270 mA; Th≤ 25 °C; f1= 2155 MHz;

= 2165 MHz;.

f

1

Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.

im

ACLR

MLD941

PL (AV) (W)

0

ACLR

(dBc)

−20

−40

−60

Fig.7 Intermodulation distortion and adjacent

channel leakage ratio (ACLR) as functions
of average load power; typical values.

2003 Feb 24 5

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

12

handbook, halfpage

z

i

(Ω)

8

4

0

2 2.1 2.152.05 2.2

VDS= 28 V; ID= 240 mA; PL= 30 W; Th≤ 25 °C.

MLD942

r

i

x

i

f (GHz)

Fig.8 Input impedance as a function of frequency

(series components); typical values.

handbook, halfpage

8

Z

L

(Ω)

4

0

−4

−8

2

VDS= 28 V; ID= 240 mA; PL= 30 W; Th≤ 25 °C.

2.05

2.1 2.2

R

X

L

L

2.15

MLD943

f (GHz)

Fig.9 Load impedance as a function of frequency

(series components); typical values.

handbook, full pagewidth

C7C8 C6

V

input

50 Ω

gate

R1

C3

L2

C4

C1

L6

L3

L4 L5

C5

C2

Fig.10 Class-AB test circuit.

2003 Feb 24 6

L11

L7 L8 L9 L10

C9

L12

C13 C17 C14 C19 C20

C11

C10

C12

C16

C18 C15

L1

output

50 Ω

MLD944

V

DD

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

List of components (See Figs 10 and 11)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C9, C10 Tekelec variable capacitor 0.6 to 4.5 pF
C3, C4, C11, C12 multilayerceramicchip capacitor;

note 1

C5 multilayerceramicchipcapacitor;

note 1

C6, C7, C13,
C14, C15, C16

C8 tantalum capacitor 10 µF
C17, C18 multilayer ceramic chip capacitor 4.7 µF TDK C4532X7R1H475M
C19 multilayerceramic chipcapacitor;

C20 electrolytic capacitor 100 µF; 63 V
L1 handmade 2 loops, dia. 4 mm
L2 stripline; note 3 50 Ω 12 × 2.4 mm
L3 stripline; note 3 43 Ω 18 × 3mm
L4 stripline; note 3 29 Ω 4 × 5mm
L5 stripline; note 3 10 Ω 5 × 18.4 mm
L6 stripline; note 3 56 Ω 34.4 × 2mm
L7 stripline; note 3 9 Ω 10 × 20 mm
L8 stripline; note 3 29 Ω 4 × 5mm
L9 stripline; note 3 41 Ω 20 × 3.2 mm
L10 stripline; note 3 50 Ω 5 × 2.4 mm
L11, L12 stripline; note 3 17 Ω 24.5 × 10 mm

multilayerceramic chipcapacitor;
note 1

note 2

6.8 pF

2.2 pF

12 pF

1nF

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 100B or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (ε

2003 Feb 24 7

= 2.2); thickness 0.79 mm.

r

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

handbook, full pagewidth

40

40

BLF2022-30 testjig input BLF2022-30 testjig output

C13

R1

C6C8C7

C17

C14

L1

C19

60

C20

C3
C4

BLF2022-30 testjig input

Dimensions in mm.
The components aresituatedon one side of the copper-clad printed-circuit board with Teflondielectric(εr= 2.2), thickness 0.79 mm.

The other side is unetched and serves as a ground plane.

C1

C5

C2

C18

BLF2022-30 testjig output

C15

C16

C11
C12

C10C9

MLD945

Fig.11 Component layout for 2.17 GHz class-AB test circuit.

2003 Feb 24 8

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 2 leads SOT608A

D

A

F

3

D

1

U

1

q

B

C

1

H

U

2

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

7.24

6.99

c

0.15

0.10

0.006

0.004

Db

10.21

10.01

0.402

0.394

D

1

10.29

10.03

0.405

0.395

10.21

10.01

0.402

0.394

UNIT

mm

inches

A

4.62

3.76

0.182

0.148

0.285

0.275

2

b

EE

1

10.29

10.03

0.405

0.395

w

M M

2

0 5 10 mm

scale

F

H

15.75

1.14

14.73

0.89

0.620

0.045

0.580

0.035

p

C

p

3.30

2.92

0.130

0.115

w

Q

1.70

1.35

0.067

0.053

c

E

1

MM M

AB

1

Q

qw

U

1

20.45

20.19

0.805

0.795

w

U

9.91

9.65

0.390

0.380

1

2

0.25 0.5115.24

0.010 0.0200.600

E

2

OUTLINE

VERSION

SOT608A

IEC JEDEC EIAJ

REFERENCES

2003 Feb 24 9

EUROPEAN

PROJECTION

ISSUE DATE

01-02-22
02-02-11

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determinesthe data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limitingvalues given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditions abovethosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected toresult in personalinjury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Feb 24 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF2022-30

NOTES

2003 Feb 24 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/03/pp12 Date of release:2003 Feb 24 Document order number: 9397 750 10921

SCA75