Philips BLF2022-125 Technical data
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M3D792
BLF2022-125
UHF power LDMOS transistor
Objective specification
Supersedes data of 2002 April 02
2003 Mar 07
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF2022-125
FEATURES
• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 1 A
– Output power = 20 W (AV)
– Gain = 12 dB
– Efficiency = 19%
– ACPR = −42 dBc at 3.84 MHz
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.
APPLICATIONS
• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range
DESCRIPTION
PINNING - SOT634A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
Top view
Fig.1 Simplified outline.
1
3
2
MBL367
125 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels,
3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF.
MODE OF OPERATION
f
(MHz)
V
(V)
DS
P
(W)
Lavg
G
(dB)
p
η
D
(%)
d
im
(dBc)
single carrier W-CDMA 2110 to 2170 28 30 typ 12 typ 19 typ −42
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − tbd A
storage temperature −65 +150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Mar 07 2
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF2022-125
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-c
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
g
fs
R
DSon
C
rss
thermal resistance from junction to case note 1 0.55 K/W
drain-source breakdown voltage VGS= 0; ID= 2.5 mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 240 mA 4.5 − 5.5 V
drain-source leakage current VGS= 0; VDS=26V −−10 µA
gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS=10V; ID=16A − 9.5 − S
drain-source on-state resistance VGS=V
+9V; ID=8A − 0.07 −Ω
GSth
feedback capacitance VGS= 0; VDS=26V; f=1MHz − tbd − pF
2003 Mar 07 3
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