Philips BLF2022-125 Technical data

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DATA SH EET

M3D792

BLF2022-125

UHF power LDMOS transistor

Objective specification
Supersedes data of 2002 April 02

2003 Mar 07

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2022-125

FEATURES

• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 1 A

– Output power = 20 W (AV)
– Gain = 12 dB
– Efficiency = 19%
– ACPR = −42 dBc at 3.84 MHz

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (2000 to 2200 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range

DESCRIPTION

PINNING - SOT634A

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

Top view

Fig.1 Simplified outline.

1

3

2

MBL367

125 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels,

3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF.

MODE OF OPERATION

f

(MHz)

V

(V)

DS

P

(W)

Lavg

G

(dB)

p

η

D

(%)

d

im

(dBc)

single carrier W-CDMA 2110 to 2170 28 30 typ 12 typ 19 typ −42

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − tbd A
storage temperature −65 +150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Mar 07 2

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2022-125

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-c

Note

1. Thermal resistance is determined under specified RF operating conditions.

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

GSS

g

fs

R

DSon

C

rss

thermal resistance from junction to case note 1 0.55 K/W

drain-source breakdown voltage VGS= 0; ID= 2.5 mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 240 mA 4.5 − 5.5 V
drain-source leakage current VGS= 0; VDS=26V −−10 µA
gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS=10V; ID=16A − 9.5 − S
drain-source on-state resistance VGS=V

+9V; ID=8A − 0.07 −Ω

GSth

feedback capacitance VGS= 0; VDS=26V; f=1MHz − tbd − pF

2003 Mar 07 3

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2022-125

APPLICATION INFORMATION

RF performance at Th=25°C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, with
68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

η

D

common-source power gain VD= 28 V; P

drain efficiency VD= 28 V; P

ACPR adjacent channel power ratio V

I

RL

input return loss VD= 28 V; P

ψ output mismatch V

= 20 W (AV), single

out

carrier W-CDMA; I

= 1000 mA;

DQ

f = 2.11 to 2.17 GHz

= 20 W (AV), single

out

carrier W-CDMA; IDQ= 1000 mA;
f = 2.11 to 2.17 GHz

= 28 V; P

D

= 20 W (AV), single

out

carrier W-CDMA; IDQ= 1000 mA;
f = 2.11 to 2.17 GHz

= 20 W (AV), single

out

carrier W-CDMA; IDQ= 1000 mA;
f = 2.11 to 2.17 GHz

= 28 V; P

D

= 20 W (AV) single

out

carrier W-CDMA;VSWR = 5:1 through
all phases

11 12 − dB

17 19 − %

−−49 −39 dBc

−−10 −6dB

no degradation in RF
performance before and after
test

RF performance at T

=25°C in a common source test circuit; two-carrier W-CDMA signals, 3GPP test mode 1 64

h

channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF per
channel frequency range is 2.11 GHz to 2.17 GHz; carrier spacing is 10 MHz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

common-source power gain VD= 28 V; P

= 20 W (AV);

out

− 12 − dB

IDQ= 1000 mA

η

D

drain efficiency VD= 28 V; P

= 20 W (AV);

out

− 19 − %

IDQ= 1000 mA

ACPR adjacent channel power ratio V

= 28 V; P

D

= 20 W (AV);

out

−−40 − dBc
IDQ= 1000 mA; ACPR is measured at
f1= −5 MHz and f2= +5 MHz

d

3

third order intermodulation
distortion

VD= 28 V; P

= 20 W (AV);

out

IDQ= 1000 mA; ACPR is measured at

−−36 − dB

f1= −10 MHz and f2= +10 MHz

I

RL

input return loss VD= 28 V; P

= 20 W (AV);

out

−−10 − dB
IDQ= 1000 mA

2003 Mar 07 4

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2022-125

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 2 leads SOT634A

Package under

development

Philips Semiconductors reserves the

D

right to make changes without notice.

A

3

D

1

U

1

q

L

U

2

A

L

1

2

w

b

M M

2

C

F

B

C

p

w

M M M

AB

1

c

1

Q

EE

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

3.38

3.12

Q

1.70

1.45

0.067

0.057

27.94

1.100

U

U

34.16

33.91

1.345

1.335

PROJECTION

2

1

13.84

13.59

0.545

0.535

EUROPEAN

UNIT

inches

A

12.82

4.83

mm

OUTLINE
VERSION

SOT634A 01-11-27

3.68

0.190

0.145

12.57

0.505

0.495

cD E

b

0.15

0.08

0.006

0.003

IEC JEDEC EIAJ

22.58

22.12

0.889

0.871

22.56

22.15

0.888

0.872

E

D

1

13.34

13.08

0.525

0.515

REFERENCES

1

13.34

13.08

0.525

0.515

FLp q

1.14

5.33

0.89

4.32

0.045

0.210

0.170

0.133

0.123

0.035

2003 Mar 07 5

w

w

0.25

0.010 0.020

1

0.51

ISSUE DATE

2

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2022-125

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atanyother conditions above thosegiven in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that suchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result in personal injury.Philips
Semiconductorscustomersusing or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the productis infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Mar 07 6

Philips Semiconductors Objective specification

UHF power LDMOS transistor BLF2022-125

NOTES

2003 Mar 07 7

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/03/pp8 Date of release: 2003 Mar 07 Document order number: 9397 750 10919

SCA75