Philips BLF2022-125 Technical data

BLF2022-125

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D792

BLF2022-125

UHF power LDMOS transistor

Objective specification			2003 Mar 07
Supersedes data of 2002 April 02

Philips Semiconductors	Objective specification
UHF power LDMOS transistor	BLF2022-125

FEATURES

∙Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A

–Output power = 20 W (AV)

–Gain = 12 dB

–Efficiency = 19%

–ACPR = −42 dBc at 3.84 MHz

∙Easy power control

∙Excellent ruggedness

∙High power gain

∙Excellent thermal stability

∙Designed for broadband operation (2000 to 2200 MHz)

∙Internally matched for ease of use.

APPLICATIONS

∙RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range

DESCRIPTION

125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA

PINNING - SOT634A

PIN	DESCRIPTION
1	drain
2	gate
3	source, connected to flange

1

3

2

Top view

MBL367

Fig.1 Simplified outline.

RF performance at Th = 25 °C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, 3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF.

	MODE OF OPERATION	f	VDS	PL avg	Gp	ηD	dim
		(MHz)	(V)	(W)	(dB)	(%)	(dBc)
	single carrier W-CDMA	2110 to 2170	28	30	typ 12	typ 19	typ −42

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL	PARAMETER	MIN.	MAX.	UNIT
VDS	drain-source voltage	−	65	V
VGS	gate-source voltage	−	±15	V
ID	drain current (DC)	−	tbd	A
Tstg	storage temperature	−65	+150	°C
Tj	junction temperature	−	200	°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Mar 07

2

Philips Semiconductors			Objective specification
UHF power LDMOS transistor			BLF2022-125
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-c	thermal resistance from junction to case	note 1	0.55	K/W

Note

1. Thermal resistance is determined under specified RF operating conditions.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V(BR)DSS	drain-source breakdown voltage	VGS = 0; ID = 2.5 mA	65	−	−	V
VGSth	gate-source threshold voltage	VDS = 10 V; ID = 240 mA	4.5	−	5.5	V
IDSS	drain-source leakage current	VGS = 0; VDS = 26 V	−	−	10	μA
IGSS	gate leakage current	VGS = ±15 V; VDS = 0	−	−	40	nA
gfs	forward transconductance	VDS = 10 V; ID = 16 A	−	9.5	−	S
RDSon	drain-source on-state resistance	VGS = VGSth + 9 V; ID = 8 A	−	0.07	−	Ω
Crss	feedback capacitance	VGS = 0; VDS = 26 V; f = 1 MHz	−	tbd	−	pF

2003 Mar 07

3