Philips BLF2022-120 Technical data

查询BLF2022-120供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D427

BLF2022-120

UHF push-pull power
LDMOS transistor

Preliminary specification 2000 Dec 12

Philips Semiconductors Preliminary specification

0

UHF push-pull power LDMOS transistor BLF2022-120

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (HF to 2.2 GHz).

APPLICATIONS

• Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range.

DESCRIPTION

Push-pull silicon N-channel enhancement mode lateral
D-MOS transistor encapsulated in a 4-lead flange package
(SOT539A) with a ceramic cap. The common source is
connected to the mounting flange.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common source test circuit.

h

PINNING - SOT539A

PIN DESCRIPTION

1drain1
2drain2
3gate1
4gate2
5 source connected to flange

12

Top view

Fig.1 Simplified outline.

43

5

MBK88

MODE OF OPERATION

2-tone, class-AB f

f

(MHz)

= 2170; f2= 2170.1 28 120 (PEP) >11 >30 ≤−25

1

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
storage temperature −65 +150 °C
junction temperature − 200 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2000 Dec 12 2

Philips Semiconductors Preliminary specification

UHF push-pull power LDMOS transistor BLF2022-120

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

Note

1. Thermal resistance is determined under nominal 2-tone RF operating conditions.

CHARACTERISTICS

T

=25°C; per section unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

rs

thermal resistance from junction to mounting-base PL= 120 W; Tmb=50°C, note 1 0.35 K/W
thermal resistance from mounting-base to heatsink 0.15 K/W

drain-source breakdown voltage VGS=0; ID=1.4mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 140 mA 4.4 − 5.5 V
drain-source leakage current VGS=0; VDS=26V −−10 µA
drain cut-off current VGS=V

+9V; VDS=10V 18 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS=10V; ID=5A − 4.2 − S
drain-source on-state resistance VGS=V
feedback capacitance VGS=0; VDS= 26 V; f = 1 MHz;

+9V; ID=5A − 0.15 −Ω

GSth

− 3.4 − pF

note 1

Note

1. Capacitance of die only.

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

2-tone, class-AB f

= 2170; f2= 2170.1 28 2 x 500 120 (PEP) >11 >30 ≤−25

1

f

(MHz)

=25°C; R

h

V

DS

(V)

I

DQ

(mA)

= 0.5 K/W; unless otherwise specified.

th j-h

P

(W)

L

G

(dB)

p

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF2022-120 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V

= 28 V; f = 2170 MHz, PL=120W(CW).

DS

2000 Dec 12 3

Philips Semiconductors Preliminary specification

Fig.2 Power gain and drain efficiency as functions of

average load power; typical values.

VDS=28V; IDQ=2x500mA;
f

1

= 2 170 MHz; f2= 2170.1 MHz;T

h

≤ 25 °C.

VDS=28V; IDQ=2x500mA;
f

1

= 2 170 MHz; f2= 2170.1 MHz;T

h

≤ 25 °C.

Fig.4 Intermodulation distortion as a function of

average load power; typical values.

UHF push-pull power LDMOS transistor BLF2022-120

15

G

P

(dB)

G

P

10

η

5

D

0

30 35 40 45 50

P

avg (dBm)

L

60

40

20

0

η

(%)

16

D

G

P

(dB)

G

12

P

ACPR

8

ACPR10

4

0

0

ACPR

(dBc)

-20

-40

-60

-80

20 25 30 35 40 45 50

P

avg (dBm)

VDS=28V; IDQ=2x500mA;

= 2 140 MHz; f2= 2140.1 MHz;T

f

1

Input signal: 3GPP W-CDMA 15DPCH
Peak to average ratio: 10.27 dB (0.0001 %)

h

L

≤ 25 °C.

Fig.3 Power gain and adjacent channel power

ratio as functions of average load power;
typical values.

0

d

im

(dBc)

-20

-40

d

d

-60

d

-80
30 35 40 45 50

2000 Dec 12 4

3

5

7

P

avg (dBm)

L

Philips Semiconductors Preliminary specification

UHF push-pull power LDMOS transistor BLF2022-120

PACKAGE OUTLINE

Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A

D

A

D

1

U

1

q

H

1

w

M M

2

F

B

C

C

c

12

H

U

2

L

A

e

43

b

0 5 10 mm

scale

p

5

w

M

3

w

M M M

1

AB

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

11.81

11.56

0.465

0.455

c

Db

D

1

31.55

0.15

0.08

0.006

0.003

31.52

30.94

30.96

1.242

1.241

1.218

1.219

IEC JEDEC EIAJ

EE

e U

9.50

13.72

0.540

9.53

9.30

9.27

0.375

0.374

0.365

0.366

REFERENCES

F

1

1.75

1.50

0.069

0.059

H

17.12

16.10

0.674

0.634

H

1

25.53

25.27

1.005

0.995

L

3.73

2.72

0.147

0.107

p

3.30

3.05

0.130

0.120

qw

Q

2.31

2.01

0.091

0.079

U

41.28

35.56

41.02

1.625

1.615

EUROPEAN

PROJECTION

1

2

10.29

10.03

0.405

0.395

w

1

ISSUE DATE

99-12-28
00-03-03

w

3

2

0.250.25 0.51

0.0100.010 0.0201.400

UNIT

mm

inches

A

5.33

3.96

0.210

0.156

OUTLINE
VERSION

SOT539A

2000 Dec 12 5

Philips Semiconductors Preliminary specification

UHF push-pull power LDMOS transistor BLF2022-120

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

(1)

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2000 Dec 12 6

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Printed in The Netherlands 603516/09/pp7 Date of release: 2000 Dec 12 Document order number: 9397 750 07842