Philips BLF2022-120 Technical data
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DATA SHEET
M3D427
BLF2022-120
UHF push-pull power
LDMOS transistor
Preliminary specification 2000 Dec 12
Philips Semiconductors Preliminary specification
0
UHF push-pull power LDMOS transistor BLF2022-120
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 2.2 GHz).
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range.
DESCRIPTION
Push-pull silicon N-channel enhancement mode lateral
D-MOS transistor encapsulated in a 4-lead flange package
(SOT539A) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common source test circuit.
h
PINNING - SOT539A
PIN DESCRIPTION
1drain1
2drain2
3gate1
4gate2
5 source connected to flange
12
Top view
Fig.1 Simplified outline.
43
5
MBK88
MODE OF OPERATION
2-tone, class-AB f
f
(MHz)
= 2170; f2= 2170.1 28 120 (PEP) >11 >30 ≤−25
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 18 A
storage temperature −65 +150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Dec 12 2
Philips Semiconductors Preliminary specification
UHF push-pull power LDMOS transistor BLF2022-120
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
Note
1. Thermal resistance is determined under nominal 2-tone RF operating conditions.
CHARACTERISTICS
T
=25°C; per section unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rs
thermal resistance from junction to mounting-base PL= 120 W; Tmb=50°C, note 1 0.35 K/W
thermal resistance from mounting-base to heatsink 0.15 K/W
drain-source breakdown voltage VGS=0; ID=1.4mA 65 −−V
gate-source threshold voltage VDS=10V; ID= 140 mA 4.4 − 5.5 V
drain-source leakage current VGS=0; VDS=26V −−10 µA
drain cut-off current VGS=V
+9V; VDS=10V 18 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS=10V; ID=5A − 4.2 − S
drain-source on-state resistance VGS=V
feedback capacitance VGS=0; VDS= 26 V; f = 1 MHz;
+9V; ID=5A − 0.15 −Ω
GSth
− 3.4 − pF
note 1
Note
1. Capacitance of die only.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF OPERATION
2-tone, class-AB f
= 2170; f2= 2170.1 28 2 x 500 120 (PEP) >11 >30 ≤−25
1
f
(MHz)
=25°C; R
h
V
DS
(V)
I
DQ
(mA)
= 0.5 K/W; unless otherwise specified.
th j-h
P
(W)
L
G
(dB)
p
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF2022-120 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
= 28 V; f = 2170 MHz, PL=120W(CW).
DS
2000 Dec 12 3
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