Philips BLF1822-10 Technical data

BLF1822-10

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D381

BLF1822-10

UHF power LDMOS transistor

Product specification			2003 Feb 10
Supersedes data of 2002 Mar 12

Philips Semiconductors	Product specification
UHF power LDMOS transistor	BLF1822-10

FEATURES

∙Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA:

–Output power = 10 W (PEP)

–Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz

–Efficiency = 39% at 900 MHz, 34% at 2200 MHz

–dim = −31 dBc at 900 MHz, −28 dBc at 2200 MHz

∙Easy power control

∙Excellent ruggedness

∙High power gain

∙Excellent thermal stability

∙Designed for broadband operation (HF to 2200 MHz)

∙No internal matching for broadband operation.

APPLICATIONS

∙RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range

∙Broadcast drivers.

DESCRIPTION

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

PINNING - SOT467C

PIN	DESCRIPTION
1	drain
2	gate
3	source, connected to flange

1

3

2

Top view

MBK584

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source test circuit.

	MODE OF		f	VDS	IDQ	PL	Gp	ηD	dim
	OPERATION		(MHz)	(V)	(mA)	(W)	(dB)	(%)	(dBc)
	CW, class-AB (2-tone)	f1	= 2200; f2 = 2200.1	26	85	10 (PEP)	>11; typ. 13.5	>30; typ. 34	≤−26; typ. −28
		f1	= 960; f2 = 960.1	26	85	10 (PEP)	typ. 18.5	typ. 39	typ. −33

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Feb 10

2

Philips Semiconductors			Product specification
UHF power LDMOS transistor			BLF1822-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL	PARAMETER	MIN.	MAX.	UNIT
VDS	drain-source voltage	−	65	V
VGS	gate-source voltage	−	±15	V
ID	drain current (DC)	−	2.2	A
Tstg	storage temperature	−65	+150	°C
Tj	junction temperature	−	200	°C

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-mb	thermal resistance from junction to mounting base	Tmb = 25 °C; note 1	5	K/W
Rth mb-h	thermal resistance from mounting base to heatsink		0.5	K/W

Note

1. Thermal resistance is determined under RF operating conditions.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V(BR)DSS	drain-source breakdown voltage	VGS = 0; ID = 0.2 mA	65	−	−	V
VGSth	gate-source threshold voltage	VDS = 10 V; ID = 20 mA	4	−	5	V
IDSS	drain-source leakage current	VGS = 0; VDS = 26 V	−	−	1.5	μA
IDSX	on-state drain current	VGS = VGSth + 9 V; VDS = 10 V	2.8	−	−	A
IGSS	gate leakage current	VGS = ±15 V; VDS = 0	−	−	40	nA
gfs	forward transconductance	VDS = 10 V; ID = 0.75 A	−	0.5	−	S
RDSon	drain-source on-state resistance	VGS = 10 V; ID = 0.75 A	−	1.2	−	Ω
Cis	input capacitance	VGS = 0; VDS = 26 V; f = 1 MHz	−	13	−	pF
Cos	output capacitance	VGS = 0; VDS = 26 V; f = 1 MHz	−	11	−	pF
Crs	feedback capacitance	VGS = 0; VDS = 26 V; f = 1 MHz	−	0.5	−	pF

2003 Feb 10

3

Philips Semiconductors	Product specification
UHF power LDMOS transistor	BLF1822-10

APPLICATION INFORMATION 2.2 GHz

RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified.

	MODE OF OPERATION	f	VDS	IDQ	PL	Gp	ηD	dim
		(MHz)	(V)	(mA)	(W)	(dB)	(%)	(dBc)
	CW, class-AB (2-tone)	f1 = 2200; f2 = 2200.1	26	85	10 (PEP)	>11	>30	≤−26

Ruggedness in class-AB operation

The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power.

102			MGW642
handbook, halfpage
C
(pF)	Cos
10	Cis
	Crs
1
10−1
0	10	20	VDS (V)	30

VGS = 0; f = 1 MHz.

Fig.2 Input, output and feedback capacitance as functions of drain-source voltage; typical values.

15				MGW643
				60
handbook, halfpage
Gp		Gp		ηD
(dB)				(%)
10				40
				ηD
5				20
0	4	8	12	0
0				16

PL (PEP) (W)

VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;

f1 = 2000 MHz; f2 = 2000.1 MHz.

Fig.3 Power gain and efficiency as functions of peak envelope load power; typical values.

2003 Feb 10

4

Philips Semiconductors	Product specification
UHF power LDMOS transistor	BLF1822-10

0				MGW644
handbook, halfpage
dim
(dBc)
−20
			d3
			d5
−40			d7
−60
−80
0	4	8	12	16

PL (PEP) (W)

VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;

f1 = 2000 MHz; f2 = 2000.1 MHz.

Fig.4 Intermodulation distortion as a function of peak envelope load power; typical values.

15				MGW645
				60
handbook, halfpage
Gp		Gp		ηD
(dB)				(%)
10				40
				ηD
5				20
0	4	8	12	0
0				16

PL (PEP) (W)

VDS = 26 V; IDQ = 85 mA;

f1 = 2200 MHz; f2 = 2200.1 MHz.

Fig.5 Power gain and efficiency as functions of peak envelope load power; typical values.

0				MGW646
handbook, halfpage
dim
(dBc)
−20
			d3
−40			d5
			d7
−60
−80				16
0	4	8	12

PL (PEP) (W)

VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;

f1 = 2200 MHz; f2 = 2200.1 MHz.

Fig.6 Intermodulation distortion as a function of peak envelope load power; typical values.

0			MGW647
handbook, halfpage
d3
(dBc)
−20
−40		(1)
		(2)
		(3)
−60
0	4	8	12	16
			PL (PEP) (W)

VDS = 26 V; Th ≤ 25 °C;

f1 = 2200 MHz; f2 = 2200.1 MHz.

(1) IDQ = 115 mA. (2) IDQ = 55 mA. (3) IDQ = 85 mA.

Fig.7 Intermodulation distortion as a function of peak envelope load power; typical values.

2003 Feb 10

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