Philips BLF1822-10 Technical data

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M3D381

BLF1822-10

UHF power LDMOS transistor

Product specification
Supersedes data of 2002 Mar 12

2003 Feb 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1822-10

FEATURES

• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 85 mA:

– Output power = 10 W (PEP)
– Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
– Efficiency = 39% at 900 MHz, 34% at 2200 MHz
– dim = −31 dBc at 900 MHz, −28 dBc at 2200 MHz

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (HF to 2200 MHz)

• No internal matching for broadband operation.

APPLICATIONS

• RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the HF to 2200 MHz frequency range

• Broadcast drivers.

PINNING - SOT467C

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

Top view

1

3

2

MBK584

DESCRIPTION

Fig.1 Simplified outline.

10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF

OPERATION

CW, class-AB (2-tone)

f

(MHz)

= 2200; f2= 2200.1 26 85 10 (PEP) >11; typ. 13.5 >30; typ. 34 ≤−26; typ. −28

f

1

f

= 960; f2= 960.1 26 85 10 (PEP) typ. 18.5 typ. 39 typ. −33

1

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Feb 10 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1822-10

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

Note

1. Thermal resistance is determined under RF operating conditions.

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base Tmb=25°C; note 1 5 K/W
thermal resistance from mounting base to heatsink 0.5 K/W

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

is

C

os

C

rs

drain-source breakdown voltage VGS= 0; ID= 0.2 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID=20mA 4 − 5V
drain-source leakage current VGS= 0; VDS=26V −−1.5 µA
on-state drain current VGS=V

+9V; VDS=10V 2.8 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS= 10 V; ID= 0.75 A − 0.5 − S
drain-source on-state resistance VGS= 10 V; ID= 0.75 A − 1.2 −Ω
input capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 13 − pF
output capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 11 − pF
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 0.5 − pF

2003 Feb 10 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1822-10

APPLICATION INFORMATION 2.2 GHz

RF performance in a common source class-AB circuit. Th=25°C; R

= 0.4 K/W; unless otherwise specified.

th mb-h

MODE OF OPERATION

CW, class-AB (2-tone) f

f

(MHz)

= 2200; f2= 2200.1 26 85 10 (PEP) >11 >30 ≤−26

1

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF1822-10 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V

2

10

handbook, halfpage

C

(pF)

C

os

C

is

10

C

rs

1

= 26 V; f = 2200 MHz at rated load power.

DS

MGW642

handbook, halfpage

G

(dB)

MGW643

15

G

p

10

5

p

η

D

60

40

20

η

(%)

D

−1

10

0 102030

VGS= 0; f = 1 MHz.

VDS (V)

Fig.2 Input, output and feedback capacitance as

functions of drain-source voltage; typical
values.

0

0841216

VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;

= 2000 MHz; f2= 2000.1 MHz.

f

1

P

(PEP) (W)

L

0

Fig.3 Power gain and efficiency as functions of

peak envelope load power; typical values.

2003 Feb 10 4

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1822-10

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

08412

VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;

= 2000 MHz; f2= 2000.1 MHz.

f

1

d

3

d

5

d

7

PL (PEP) (W)

MGW644

Fig.4 Intermodulation distortion as a function of

peak envelope load power; typical values.

MGW645

15

handbook, halfpage

G

p

(dB)

10

5

16

0

0841216

VDS= 26 V; IDQ= 85 mA;

= 2200 MHz; f2= 2200.1 MHz.

f

1

G

p

η

D

P

(PEP) (W)

L

60

40

20

0

η

(%)

D

Fig.5 Power gain and efficiency as functions of

peak envelope load power; typical values.

handbook, halfpage

0

d

im

(dBc)

−20

−40

−60

−80

08412

VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;

= 2200 MHz; f2= 2200.1 MHz.

f

1

d

3

d

5

d

7

PL (PEP) (W)

MGW646

Fig.6 Intermodulation distortion as a function of

peak envelope load power; typical values.

handbook, halfpage

16

0

d

3

(dBc)

−20

−40

−60

0841216

VDS= 26 V; Th≤ 25 °C;

= 2200 MHz; f2= 2200.1 MHz.

f

1

= 115 mA. (2) IDQ= 55 mA. (3) IDQ=85mA.

(1) I

DQ

(1)
(2)
(3)

P

L

MGW647

(PEP) (W)

Fig.7 Intermodulation distortion as a function of

peak envelope load power; typical values.

2003 Feb 10 5