Philips BLF1820-90 Technical data
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ook, halfpage
M3D379
BLF1820-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Mar 07
2003 Feb 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1820-90
FEATURES
• Typical 2-tone performance at a supply voltage of 26 V
and IDQof 500 mA:
– Output power = 90 W (PEP)
– Gain = 12 dB
– Efficiency = 32%
– dim = −26 dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (1800 to 2000 MHz)
• Internally matched for ease of use.
APPLICATIONS
• RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.
DESCRIPTION
PINNING
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
handbook, halfpage
1
2
Top view
3
MBK394
Fig.1 Simplified outline SOT502A.
90 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION
2-tone, class-AB f
f
(MHz)
= 2000; f2= 2000.1 26 90 (PEP) >11 >30 ≤−25
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 12 A
storage temperature −65 +150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
im
2003 Feb 10 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1820-90
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rss
thermal resistance from junction to heatsink Th=25°C; note 1 0.81 K/W
drain-source breakdown voltage VGS= 0; ID= 2.1 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 210 mA 4.4 − 5.5 V
drain-source leakage current VGS= 0; VDS=26V −−15 µA
on-state drain current VGS=V
+9V; VDS=10V 27 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−38 nA
forward transconductance VDS= 10 V; ID= 7.5 A − 6.2 − S
drain-source on-state resistance VGS=V
feedback capacitance VGS=0;VDS= 26 V; f = 1 MHz;
+9V; ID= 7.5 A − 0.1 −Ω
GSth
− 5.1 − pF
note 1
Note
1. The value of capacitance is that of the die only.
2003 Feb 10 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1820-90
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; R
= 0.81 K/W; unless otherwise specified.
th j-h
MODE OF OPERATION
Two-tone, class-AB f
f
(MHz)
= 2000; f2= 2000.1 26 750 90(PEP) >11 >30 ≤−25
1
V
(V)
DS
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF1820-90 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
15
handbook, halfpage
G
p
(dB)
G
p
10
= 26 V; IDQ= 750 mA; PL= 90 W; f = 2000 MHz (single tone).
DS
MLD556
50
η
D
(%)
η
D
40
30
20
10
handbook, halfpage
d
im
(dBc)
−20
−40
−60
0
MLD557
d
3
d
5
d
7
5
0 40 120
VDS= 26 V; IDQ= 750 mA; Th≤ 25 °C;
= 2000 MHz; f2= 2000.1 MHz.
f
1
80
PL (W) (PEP)
0
Fig.2 Powergainanddrainefficiencyasfunctions
of peak envelope load power; typical
values.
−80
040
VDS= 26 V; IDQ= 750 mA; Th≤ 25 °C;
= 2000 MHz; f2= 2000.1 MHz.
f
1
80
P
(PEP) (W)
L
120
Fig.3 Intermodulation distortion products as
functions of peak envelope load power;
typical values.
2003 Feb 10 4
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