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ook, halfpage
M3D379
BLF1820-70
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Feb 12
2003 Feb 10
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Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1820-70
FEATURES
• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 500 mA:
– Output power = 65 W (PEP)
– Gain = 12 dB
– Efficiency = 32%
– dim = −26 dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (1800 to 2000 MHz)
• Internally matched for ease of use.
APPLICATIONS
• RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.
DESCRIPTION
PINNING
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
handbook, halfpage
Top view
1
2
Fig.1 Simplified outline SOT502A.
3
MBK394
70 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION
2-tone, class-AB f
f
(MHz)
= 2000; f2= 2000.1 26 65 (PEP) >11 >30 ≤−25
1
V
(V)
DS
P
(W)
L
G
(dB)
p
η
D
(%)
d
(dBc)
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
im
2003 Feb 10 2
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Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1820-70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
Note
1. Determined under specified RF operating conditions.
drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 9A
storage temperature −65 +150 °C
junction temperature − 200 °C
thermal resistance from junction to
Th=25°C, note 1 1.15 K/W
heatsink
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rss
drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 140 mA 4.4 − 5.5 V
drain-source leakage current VGS= 0; VDS=26V −−10 µA
on-state drain current VGS=V
+9V; VDS=10V 18 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS= 10 V; ID=5A − 4.2 − S
drain-source on-state resistance VGS=V
+9V; ID=5A − 0.15 −Ω
GSth
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 3.4 − pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF OPERATION
2-tone, class-AB f
= 2000; f2= 2000.1 26 500 65 (PEP) >11 >30 ≤−25
1
f
(MHz)
=25°C; R
h
V
DS
(V)
= 1.15 K/W, unless otherwise specified.
th j-h
I
DQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
Ruggedness in class-AB operation
The BLF1820-70 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
= 26 V; IDQ= 500 mA; PL= 65 W; f = 2000 MHz.
DS
2003 Feb 10 3
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Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1820-70
15
handbook, halfpage
G
G
p
(dB)
10
5
0
0
f1= 2000 MHz; f2= 2000.1 MHz; VDS=26V;
= 500 mA; Th≤ 25 °C.
I
DQ
Fig.2 Power gain and drain efficiency as a
Fig.2 Power gain and drain efficiency as a
function of peak envelope load power;
function of peak envelope load power;
typical values.
typical values.
p
η
D
20 40 8060
PL (PEP) (W)
MLD526
60
40
20
0
η
(%)
handbook, halfpage
D
0
d
im
(dBc)
−20
d
−40
−60
−80
020
f1= 2000 MHz; f2= 2000.1 MHz; VDS=26V;
= 500 mA; Th≤ 25 °C.
I
DQ
3
d
5
d
7
40 80
MLD527
60
P
(PEP) (W)
L
Fig.3 Intermodulation distortion as a function of
peak envelope load power; typical values.
15
handbook, halfpage
(3)
G
p
(dB)
(1) (2)
10
(1)
(3)
5
0
0
f1= 2000 MHz; f2= 2000.1 MHz; VDS= 26 V; Th≤ 25 °C.
(1) IDQ= 400 mA.
(2) IDQ= 500 mA.
(3) IDQ= 600 mA.
20 40 8060
Fig.4 Power gain and drain efficiency as a
function of the peak envelope load power;
typical values.
MLD528
(2)
PL (W)
60
40
20
0
η
(%)
handbook, halfpage
D
0
d
3
(dBc)
−20
(1)
−40
−60
−80
0
VDS= 26 V; Th≤ 25 °C; f1= 2000 MHz; f2= 2000.1 MHz.
(1) IDQ= 400 mA.
(2) IDQ= 500 mA.
(3) IDQ= 600 mA.
20
(2)
(3)
40 80
MLD529
60
PL (PEP) (W)
Fig.5 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
2003 Feb 10 4