Philips BLF1820-70 Technical data

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ook, halfpage

M3D379

BLF1820-70

UHF power LDMOS transistor

Product specification
Supersedes data of 2001 Feb 12

2003 Feb 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1820-70

FEATURES

• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 500 mA:

– Output power = 65 W (PEP)
– Gain = 12 dB
– Efficiency = 32%
– dim = −26 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (1800 to 2000 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.

DESCRIPTION

PINNING

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

handbook, halfpage

Top view

1

2

Fig.1 Simplified outline SOT502A.

3

MBK394

70 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

2-tone, class-AB f

f

(MHz)

= 2000; f2= 2000.1 26 65 (PEP) >11 >30 ≤−25

1

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

d

(dBc)

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

im

2003 Feb 10 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1820-70

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

Note

1. Determined under specified RF operating conditions.

drain-source voltage − 65 V
gate-source voltage −±15 V
DC drain current − 9A
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to

Th=25°C, note 1 1.15 K/W

heatsink

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

rss

drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 140 mA 4.4 − 5.5 V
drain-source leakage current VGS= 0; VDS=26V −−10 µA
on-state drain current VGS=V

+9V; VDS=10V 18 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−25 nA
forward transconductance VDS= 10 V; ID=5A − 4.2 − S
drain-source on-state resistance VGS=V

+9V; ID=5A − 0.15 −Ω

GSth

feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 3.4 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

2-tone, class-AB f

= 2000; f2= 2000.1 26 500 65 (PEP) >11 >30 ≤−25

1

f

(MHz)

=25°C; R

h

V

DS

(V)

= 1.15 K/W, unless otherwise specified.

th j-h

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF1820-70 iscapable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V

= 26 V; IDQ= 500 mA; PL= 65 W; f = 2000 MHz.

DS

2003 Feb 10 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1820-70

15

handbook, halfpage

G

G

p

(dB)

10

5

0

0

f1= 2000 MHz; f2= 2000.1 MHz; VDS=26V;

= 500 mA; Th≤ 25 °C.

I

DQ

Fig.2 Power gain and drain efficiency as a

Fig.2 Power gain and drain efficiency as a

function of peak envelope load power;

function of peak envelope load power;
typical values.

typical values.

p

η

D

20 40 8060

PL (PEP) (W)

MLD526

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

im

(dBc)

−20

d

−40

−60

−80

020

f1= 2000 MHz; f2= 2000.1 MHz; VDS=26V;

= 500 mA; Th≤ 25 °C.

I

DQ

3

d

5

d

7

40 80

MLD527

60

P

(PEP) (W)

L

Fig.3 Intermodulation distortion as a function of

peak envelope load power; typical values.

15

handbook, halfpage

(3)

G

p

(dB)

(1) (2)

10

(1)

(3)

5

0

0

f1= 2000 MHz; f2= 2000.1 MHz; VDS= 26 V; Th≤ 25 °C.
(1) IDQ= 400 mA.
(2) IDQ= 500 mA.
(3) IDQ= 600 mA.

20 40 8060

Fig.4 Power gain and drain efficiency as a

function of the peak envelope load power;
typical values.

MLD528

(2)

PL (W)

60

40

20

0

η

(%)

handbook, halfpage

D

0

d

3

(dBc)

−20

(1)

−40

−60

−80

0

VDS= 26 V; Th≤ 25 °C; f1= 2000 MHz; f2= 2000.1 MHz.
(1) IDQ= 400 mA.
(2) IDQ= 500 mA.
(3) IDQ= 600 mA.

20

(2)
(3)

40 80

MLD529

60

PL (PEP) (W)

Fig.5 Third order intermodulation distortion as a

function of peak envelope load power;
typical values.

2003 Feb 10 4