Philips blf177_n Datasheet

BLF177

HF/VHF power MOS transistor

Rev. 06 — 24 January 2007 Product data sheet

IMPORTANT NOTICE

Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name

- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.

http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[email protected] use [email protected]

(email)
The copyright notice at the bottom of each page (or elsewhere in the document,

depending on the version)

- © Koninklijke Philips Electronics N.V. (year). All rights reserved ­is replaced with:

- © NXP B.V. (year). All rights reserved. ­If you have any questions related to the data sheet, please contact our nearest sales

office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,

NXP Semiconductors

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

2 of 19

HF/VHF power MOS transistor BLF177

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Designed for industrial and military
applications in the HF/VHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, witha ceramic cap.
All leads are isolated from the flange.

Amarkingcode,showinggate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.

PIN CONFIGURATION

ndbook, halfpage

43

d

g

MBB072

21

MLA876

s

Fig.1 Simplified outline (SOT121B) and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

PINNING

WARNING

Product and environmental safety - toxic materials

PIN DESCRIPTION

This product contains beryllium oxide. The product is entirely safe provided

1 drain
2 source
3 gate
4 source

that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

d

3

(dB)

d

5

(dB)

SSB class-AB 28 50 150 (PEP) >20 >35 <−30 <−30
CW class-B 108 50 150 typ. 19 typ. 70 −−

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

3 of 19

HF/VHF power MOS transistor BLF177

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 125 V
gate-source voltage −±20 V
drain current (DC) − 16 A
total power dissipation Tmb≤ 25 °C − 220 W
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base max. 0.8 K/W
thermal resistance from mounting base to heatsink max. 0.2 K/W

2

10

handbook, halfpage

I

D

(A)

10

(1) (2)

1

−1

10

110

(1) Current in this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

MRA906

2

10

VDS (V)

.

DSon

3

10

300

handbook, halfpage

P

tot

(W)

200

100

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

50

(1)

(2)

100 150

MGP089

Th (°C)

Fig.3 Power derating curves.

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

4 of 19

HF/VHF power MOS transistor BLF177

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID= 100 mA; VGS= 0 125 −−V
drain-source leakage current VGS= 0; VDS=50V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1 µA
gate-source threshold voltage ID= 50 mA; VDS=10V 2 − 4.5 V
gate-source voltage difference of

ID= 50 mA; VDS=10V −−100 mV

matched pairs
forward transconductance ID= 5 A; VDS= 10 V 4.5 6.2 − S
drain-source on-state resistance ID= 5 A; VGS=10V − 0.2 0.3 Ω
on-state drain current VGS= 10 V; VDS=10V − 25 − A
input capacitance VGS= 0; VDS=50V; f=1MHz − 480 − pF
output capacitance VGS= 0; VDS=50V; f=1MHz − 190 − pF
feedback capacitance VGS= 0; VDS=50V; f=1MHz − 14 − pF

VGS group indication

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

5 of 19

HF/VHF power MOS transistor BLF177

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−2

VDS= 10 V; valid for Th=25to70°C.

−1

10

11010

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical
values.

MGP090

30

handbook, halfpage

I

D

(A)

20

10

0

0

VDS=10V.

51015

MGP091

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage; typical values.

400

handbook, halfpage

R

DSon

(mΩ)

300

200

100

0

ID= 5 A; VGS=10V.

50 100 150

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MGP092

C

is

C

os

MBK408

VDS (V)

1200

handbook, halfpage

C

(pF)

800

400

0

0

VGS= 0; f = 1 MHz.

20 40

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

60

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

6 of 19

HF/VHF power MOS transistor BLF177

300

handbook, halfpage

C

rs

(pF)

200

100

0

0

10 5020 30 40

VGS= 0; f = 1 MHz.

V

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MGP093

DS

(V)

APPLICATION INFORMATION FOR CLASS-AB OPERATION

RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).
Th=25°C; R

MODE OF

OPERATION

SSB, class-AB 28 50 0.7 20 to 150

= 0.2 K/W; ZL= 6.25 + j0 Ω; f1= 28.000 MHz; f2= 28.001 MHz unless otherwise specified.

th mb-h

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

L

(W)

(PEP)

G

p

(dB)

>20

typ. 35

η

D

(%)

>35

typ. 40

(note 1)

typ. −35

d

3

(dB)

<−30

d

5

(dB)

(note 1)

<−30

typ. −38

Note

1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.

Ruggedness in class-AB operation

The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: f = 28 MHz; V

= 50 V at rated output power.

DS

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

7 of 19

HF/VHF power MOS transistor BLF177

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-AB operation; VDS= 50 V; IDQ= 0.7 A;
RGS=5Ω; f1= 28.000 MHz; f2= 28.001 MHz.

100 200

PL (W) PEP

MGP096

Fig.9 Power gain as a function of load power;

typical values.

60

handbook, halfpage

η

D

(%)

40

20

0

0

Class-AB operation; VDS= 50 V; IDQ= 0.7 A;
RGS=5Ω; f1= 28.000 MHz; f2= 28.001 MHz.

100 200

PL (W) PEP

MGP094

Fig.10 Two tone efficiency as a function of load

power; typical values.

−20

handbook, halfpage

d

3

(dB)

−30

−40

−50

−60

0

Class-AB operation; VDS= 50 V; IDQ= 0.7 A;
RGS=5Ω; f1= 28.000 MHz; f2= 28.001 MHz.

100 200

PL (W) PEP

MGP097

Fig.11 Third order intermodulation distortion as a

function of load power; typical values.

−20

handbook, halfpage

d

5

(dB)

−30

−40

−50

−60

0

Class-AB operation; VDS= 50 V; IDQ= 0.7 A;
RGS=5Ω; f1= 28.000 MHz; f2= 28.001 MHz.

100 200

PL (W) PEP

MGP098

Fig.12 Fifth order intermodulation distortion as a

function of load power; typical values.

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

8 of 19

HF/VHF power MOS transistor BLF177

handbook, full pagewidth

input
50 Ω

C1

C2

C3

C4

D.U.T.

L1

R3

R4

+V

G

L2

R2R1

C5

L3

L4

C6

L5

C9

C10

R5

C8

C7

C12

L6

C11

C14

C15

C13

output

50 Ω

+V

D

MGP095

Fig.13 Test circuit for class-AB operation.

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

9 of 19

HF/VHF power MOS transistor BLF177

List of components class-AB test circuit (see Fig.13)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C4, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2 multilayer ceramic chip capacitor

(note 1)

C3, C11 multilayer ceramic chip capacitor

(note 1)
C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C8 electrolytic capacitor 2.2 µF, 63 V
C9, C10 multilayer ceramic chip capacitor

(note 1)
C12 multilayer ceramic chip capacitor

(note 1)
C15 multilayer ceramic chip capacitor

(note 1)
L1 5 turns enamelled 0.7 mm copper

wire

L2, L3 stripline (note 2) 41.1 Ω length 13 × 6mm
L4 7 turns enamelled 1.5 mm copper

wire

L5 grade 3B Ferroxcube wideband HF

choke
L6 5 turns enamelled 2 mm copper wire 170 nH length 11.5 mm;

R1, R2 metal film resistor 10 Ω, 1 W
R2 metal film resistor 10 kΩ, 0.4 W
R3 metal film resistor 1 MΩ, 0.4 W
R5 metal film resistor 10 kΩ, 1 W

56 pF

62 pF

20 pF

100 pF

150 pF

133 nH length 4.5 mm; int.

dia. 6 mm; leads
2 × 5mm

236 nH length 12.5 mm;

int. dia. 8 mm;
leads 2 × 5mm

4312 020 36642

int. dia. 8 mm;
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr= 2.2),
thickness 1.6 mm (Rogers 5880).

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

10 of 19

HF/VHF power MOS transistor BLF177

10

handbook, halfpage

Z

i

(Ω)

r

5

0

−5
0

Class-AB operation; VDS= 50 V; IDQ= 0.7 A;

= 150 W (PEP); RGS= 6.25 Ω; RL= 6.25 Ω.

P

L

i

x

i

10 20 30

MGP099

f (MHz)

Fig.14 Input impedance as a function of frequency

(series components); typical values.

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-AB operation; VDS= 50 V; IDQ= 0.7 A;

= 150 W (PEP); RGS= 6.25 Ω; RL= 6.25 Ω.

P

L

10 20 30

f (MHz)

Fig.15 Power gain as a function of frequency;

typical values.

MGP100

APPLICATION INFORMATION FOR CLASS-B OPERATION

RF performance in CW operation in a common source class-B test circuit (see Fig.19).
Th=25°C; R

MODE OF

OPERATION

= 0.2 K/W; RGS= 15.8 Ω unless otherwise specified.

th mb-h

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

(W)

L

G

p

(dB)

η

(%)

CW, class-B 108 50 0.1 150 typ. 19 typ. 70

D

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

11 of 19

HF/VHF power MOS transistor BLF177

30

handbook, halfpage

G

p

(dB)

20

10

0

0 100 200

Class-B operation; VDS= 50 V; IDQ= 100 mA;

= 15.8 Ω; f = 108 MHz.

R

GS

PL (W)

Fig.16 Power gain as a function of load power;

typical values.

MGP101

100

handbook, halfpage

η

D

(%)

50

0

0

Class-B operation; VDS= 50 V; IDQ= 100 mA;

= 15.8 Ω; f = 108 MHz.

R

GS

100 200

MGP102

PL (W)

Fig.17 Two tone efficiency as a function of load

power; typical values.

3

MGP103

PIN (W)

200

handbook, halfpage

P

L

(W)

100

0

012 4

Class-B operation; VDS= 50 V; IDQ= 100 mA;

= 15.8 Ω; f = 108 MHz.

R

GS

Fig.18 Load power as a function of input power;

typical values.

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

12 of 19

HF/VHF power MOS transistor BLF177

handbook, full pagewidth

input
50 Ω

C1

C3

C2

C17

D.U.T.

C4

C5

L2

C6

C7

R3

C8

R4

L1

BLF177

L3

R2R1

R5

L4

L5

C9

C11

L6

C19

L7

C10

R6

MGP104

C13

C14

C12

+V

C15

C16

C18

output

50 Ω

L8

D

Fig.19 Test circuit for class-B operation at 108 MHz.

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

13 of 19

HF/VHF power MOS transistor BLF177

List of components class-B test circuit (see Fig.19)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C16, C18 film dielectric trimmer 2.5 to 20 pF 2222 809 07004
C3 multilayer ceramic chip capacitor

(note 1)

C4, C5 multilayer ceramic chip capacitor

(note 1)

C6, C7, C9, C10 multilayer ceramic chip capacitor

(note 1)
C8 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C12 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C13, C14 multilayer ceramic chip capacitor

(note 1)
C15 multilayer ceramic chip capacitor

(note 1)
C17 multilayer ceramic chip capacitor

(note 1)
C19 electrolytic capacitor 4.4 µF, 63 V 2222 030 28478
L1 3 turns enamelled 0.8 mm copper

wire

L2 stripline (note 2) 64.7 Ω 31 × 3mm
L3, L4 stripline (note 2) 41.1 Ω 10 × 6mm
L5 6 turns enamelled 1.6 mm copper

wire

L6 grade 3B Ferroxcube wideband HF

choke
L7 1 turn enamelled 1.6 mm copper

wire
L8 2 turns enamelled 1.6 mm copper

wire

R1, R2 metal film resistor 31.6 Ω, 1 W
R3 metal film resistor 1 kΩ, 0.4 W
R4 cermet potentiometer 5 kΩ
R5 metal film resistor 44.2 kΩ, 0.4 W
R6 metal film resistor 10 Ω, 1W

20 pF

62 pF

1nF

36 pF

12 pF

5.6 pF

22 nH length 5.5 mm;

int. dia. 3 mm;
leads 2 × 5mm

122 nH length 13.8 mm;

int. dia. 6 mm;
leads 2 × 5mm

4312 020 36642

16.5 nH int. dia. 9 mm;
leads 2 × 5mm

34.4 nH length 3.9 mm;
int. dia. 6 mm;
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr= 2.2),
thickness 1.6 mm (Rogers 5880).

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

14 of 19

HF/VHF power MOS transistor BLF177

handbook, full pagewidth

strap strap

C3

C1 C2

174

rivet

strap

R4

R5

L6

R3

C8

C6
C7

C4

L1

C5

R1 R2

L2

L3

C9

R6

C11

C10

L5

C13

L7

L4

C14

+V

C12

C19

D

C15

L8

C16 C18

70

C17

Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground.

Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a
direct contact between upper and lower sheets.

MGP105

Fig.20 Component layout for 108 MHz class-B test circuit.

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

15 of 19

HF/VHF power MOS transistor BLF177

r

i

x

i

f (MHz)

MGP107

handbook, halfpage

4

Z

i

(Ω)

2

0

−2

−4

−6

0 200

Class-B operation; VDS=50V;IDQ= 0.1 A;

= 150 W; RGS=15Ω.

P

L

100

Fig.21 Input impedance as a function of frequency

(series components); typical values.

10

handbook, halfpage

Z

L

(Ω)

8

R

L

6

X

4

2

0

0 200

Class-B operation; VDS=50V;IDQ= 0.1 A;

= 150 W; RGS=15Ω.

P

L

L

100

MGP108

f (MHz)

Fig.22 Load impedance as a function of frequency

(series components); typical values.

handbook, halfpage

Fig.23 Definition of transistor impedance.

30

handbook, halfpage

G

p

(dB)

20

10

Z

i

Z

MBA379

L

0

0 200

Class-B operation; VDS=50V;IDQ= 0.1 A;

= 150 W; RGS=15Ω.

P

L

100

MGP109

f (MHz)

Fig.24 Power gain as a function of frequency;

typical values.

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

16 of 19

HF/VHF power MOS transistor BLF177

BLF177 scattering parameters

VDS= 50 V; ID= 100 mA; note 1.

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.86 −110.20 36.90 114.20 0.02 25.20 0.64 −84.90
10 0.83 −139.40 20.39 93.30 0.02 5.10 0.55 −112.00
20 0.85 −155.70 9.82 72.60 0.02 −13.40 0.60 −129.30
30 0.88 −161.50 5.96 59.30 0.02 −24.70 0.69 −138.00
40 0.90 −164.90 3.98 49.30 0.02 −31.70 0.76 −144.30
50 0.92 −167.10 2.83 41.90 0.01 −35.80 0.82 −149.30
60 0.94 −169.00 2.11 36.00 0.01 −36.80 0.86 −153.50
70 0.96 −170.70 1.63 31.20 0.01 −33.70 0.89 −157.00
80 0.96 −172.20 1.29 27.40 0.00 −23.00 0.91 −159.90
90 0.97 −173.40 1.04 24.20 0.00 3.30 0.92 −162.40

100 0.97 −174.30 0.86 21.70 0.00 42.50 0.94 −164.50
125 0.99 −176.50 0.57 16.40 0.01 81.60 0.95 −168.80
150 0.99 −178.10 0.40 13.40 0.01 88.70 0.97 −171.90
175 0.99 −179.80 0.30 11.60 0.02 90.70 0.98 −174.50
200 1.00 179.20 0.23 11.00 0.02 90.80 0.98 −176.70
250 1.00 177.00 0.15 11.70 0.03 90.50 0.99 179.80
300 1.00 175.10 0.11 16.70 0.03 89.60 0.99 176.90

350 0.99 173.30 0.08 24.10 0.04 88.30 0.99 174.30

400 1.00 171.80 0.07 33.10 0.05 88.00 0.99 171.90
450 0.99 170.10 0.07 42.70 0.05 87.80 0.99 169.60
500 0.99 168.50 0.07 51.90 0.06 86.50 0.99 167.40
600 0.99 165.40 0.07 64.20 0.07 84.90 0.99 163.10
700 0.99 162.30 0.09 70.60 0.09 83.10 0.98 158.90
800 0.99 158.90 0.10 73.80 0.10 82.20 0.98 154.80
900 0.99 155.30 0.12 74.90 0.12 80.70 0.97 150.60

1000 0.98 151.80 0.14 76.40 0.14 79.80 0.97 146.20

Note

1. For more extensive s-parameters see internet website:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast

NXP Semiconductors Product specification

Rev. 06 - 24 January 2007

17 of 19

HF/VHF power MOS transistor BLF177

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D

A

F

D

1

q

U

1

C

B

H

b

43

α

p

12

H

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

7.27

6.17

0.286

0.243

5.82

5.56

0.229

0.219

c

0.16

0.10

0.006

0.004

Db

12.86

12.59

0.506

0.496

D

12.83

12.57

0.505

0.495

F

1

2.67

28.45

2.41

25.52

1.120

0.105

1.005

0.095

pH

3.30

3.05

0.130

0.120

Q

4.45

3.91

0.175

0.154

q

18.42

0.725

U

1

24.90

24.63

0.98

0.97

w

2

A

2

w

M M M

1

0.255

0.245

M M

C

AB

0 5 10 mm

U

U

3

2

12.32

6.48

12.06

6.22

0.485

0.475

U

scale

w1w

0.25

0.01

3

0.51

0.02

c

Q

αU

2

45°

SOT121B 99-03-29

OUTLINE
VERSION

REFERENCES

IEC JEDEC EIAJ

EUROPEAN

PROJECTION

ISSUE DATE

NXP Semiconductors

Rev. 06 - 24 January 2007

18 of 19

Legal information

Data sheet status

BLF177

HF/VHF power MOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The productstatus of device(s)described in this documentmay have changed since this document was published and may differin case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included hereinand shall have noliability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the sameproduct type number(s) and title.A short datasheet is intended
for quickreference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction ofa NXP Semiconductors product can reasonablybe expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings SystemofIEC 60134) may cause permanent
damage to the device.Limiting values are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published

http://www.nxp.com/profile/terms, including those pertaining to warranty,

at
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Trademarks

Notice: Allreferenced brands, product names,service names and trademarks
are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

NXP Semiconductors

Rev. 06 - 24 January 2007

19 of 19

BLF177

HF/VHF power MOS transistor

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF177_N_6 20070124 Product data sheet - BLF177_5
Modifications:

BLF177_5
(9397 750 14416)

BLF177_4
(9397 750 11579)

BLF177_3
(9397 750 04059)

BLF177_CNV_2
(9397 750 xxxxx)

• correction made to figure title of Fig.13

• correction made to note 2 on page 9

• correction made to note 2 on page 13

• correction made to figure note of Fig.20

20041217 Product specification - BLF177_4

20030721 Product specification - BLF177_3

19980702 Product specification - BLF177_CNV_2

19971216 Product specification - -

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 24 January 2007

Document identifier: BLF177_N_6