Philips blf177 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D060

BLF177

HF/VHF power MOS transistor

Product specification
Supersedes data of September 1992

1998 Jul 02

Philips Semiconductors Product specification

a

HF/VHF power MOS transistor BLF177

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Designed for industrial and military
applications in the HF/VHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.

A marking code, showing gate-source
voltage (V

) information is provided

GS

for matched pair applications. Refer
to the handbook 'General' section for
further information.

PINNING

PIN CONFIGURATION

ndbook, halfpage

43

d

g

MBB072

21

MLA876

s

Fig.1 Simplified outline (SOT121B) and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

SSB class-AB 28 50 150 (PEP) >20 >35 <−30 <−30

=25°C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

d

3

(dB)

d

5

(dB)

CW class-B 108 50 150 typ. 19 typ. 70 −−

1998 Jul 02 2

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 110 V
gate-source voltage −±20 V
drain current (DC) − 16 A
total power dissipation Tmb≤ 25 °C − 220 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base max. 0.8 K/W
thermal resistance from mounting base to heatsink max. 0.2 K/W

2

10

handbook, halfpage

I

D

(A)

10

(1) (2)

1

−1

10

110

(1) Current in this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

2

10

V

.

DSon

DS

MRA906

(V)

300

handbook, halfpage

P

tot

(W)

200

100

3

10

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

50

(1)

(2)

100 150

MGP089

Th (°C)

Fig.3 Power derating curves.

1998 Jul 02 3

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID= 50 mA; VGS=0 110 −−V
drain-source leakage current VGS= 0; VDS=50V −−2.5 mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 50 mA; VDS=10V 2 − 4.5 V
gate-source voltage difference of

ID= 50 mA; VDS=10V −−100 mV

matched pairs
forward transconductance ID= 5 A; VDS= 10 V 4.5 6.2 − S
drain-source on-state resistance ID= 5 A; VGS=10V − 0.2 0.3 Ω
on-state drain current VGS= 10 V; VDS=10V − 25 − A
input capacitance VGS= 0; VDS=50V; f=1MHz − 480 − pF
output capacitance VGS= 0; VDS=50V; f=1MHz − 190 − pF
feedback capacitance VGS= 0; VDS=50V; f=1MHz − 14 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−2

VDS= 10V; valid for Th=25to70°C.

−1

10

11010

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current; typical
values.

MGP090

30

handbook, halfpage

I

D

(A)

20

10

0

0

VDS=10V.

51015

MGP091

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage; typical values.

1998 Jul 02 4

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

400

handbook, halfpage

R

DSon

(mΩ)

300

200

100

0

ID= 5A; VGS=10V.

50 100 150

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MGP092

C

is

C

os

MBK408

VDS (V)

1200

handbook, halfpage

C

(pF)

800

400

0

0

VGS= 0; f= 1 MHz.

20 40

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

60

300

handbook, halfpage

C

rs

(pF)

200

100

0

0

10 5020 30 40

VGS= 0; f = 1 MHz.

V

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MGP093

DS

(V)

1998 Jul 02 5

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

APPLICATION INFORMATION FOR CLASS-AB OPERATION

RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).
T

=25°C; R

h

= 0.2 K/W; ZL= 6.25 + j0 Ω; f1= 28.000 MHz; f2= 28.001 MHz unless otherwise specified.

th mb-h

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(A)

P

(W)

L

SSB, class-AB 28 50 0.7 20 to 150

(PEP)

G

p

(dB)

>20

typ. 35

η

D

(%)

>35

typ. 40

d

3

(dB)

(note 1)

<−30

typ. −35

d

5

(dB)

(note 1)

<−30

typ. −38

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are

referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.

Ruggedness in class-AB operation

The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: f = 28 MHz; V

30

handbook, halfpage

G

p

(dB)

20

= 50 V at rated output power.

DS

MGP096

60

handbook, halfpage

η

D

(%)

40

MGP094

10

0

0

Class-AB operation; VDS= 50 V; IDQ= 0.7 A;
RGS=5Ω; f1= 28.000 MHz; f2= 28.001 MHz.

100 200

PL (W) PEP

Fig.9 Power gain as a function of load power;

typical values.

1998 Jul 02 6

20

0

0

Class-AB operation; VDS= 50 V; IDQ= 0.7 A;
RGS=5Ω; f1= 28.000 MHz; f2= 28.001 MHz.

100 200

PL (W) PEP

Fig.10 Two tone efficiency as a function of load

power; typical values.