Philips BLF177 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF177

HF/VHF power MOS transistor

Product specification
File under Discrete Semiconductors, SC08a

September 1992

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

A marking code, showing gate-source
voltage (V

) information is provided

GS

for matched pair applications. Refer
to the 'General' section for further
information.

PIN CONFIGURATION

ndbook, halfpage

14

g

MBB072

32

MLA876

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

PINNING - SOT121

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

= 25 °C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

P

(dB)

η

(%)

D

d

3

(dB)

d

5

(dB)

SSB class-AB 28 50 150 (PEP) > 20 > 35 <−30 <−30
CW class-B 108 50 150 typ. 19 typ. 70 −−

September 1992 2

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 110 V
gate-source voltage − 20 V
DC drain current − 16 A
total power dissipation up to Tmb = 25 °C − 220 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base max. 0.8 K/W
thermal resistance from mounting base to heatsink max. 0.2 K/W

2

10

handbook, halfpage

I

D

(A)

10

(1) (2)

1

−1

10

110

(1) Current is this area may be limited by R
(2) Tmb = 25 °C.

Fig.2 DC SOAR.

2

10

V

DS(on)

DS

.

MRA906

(V)

300

handbook, halfpage

P

tot

(W)

200

100

3

10

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

50

(1)

(2)

100 150

MGP089

Th (°C)

Fig.3 Power/temperature derating curves.

September 1992 3

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID = 50 mA; VGS = 0 110 −−V
drain-source leakage current VGS = 0; VDS = 50 V −−2.5 mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of

ID = 50 mA; VDS = 10 V −−100 mV

matched pairs
forward transconductance ID = 5 A; VDS = 10 V 4.5 6.2 − S
drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 25 − A
input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 480 − pF
output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 190 − pF
feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 14 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−2

VDS= 10 V; valid for Th= 25 to 70 °C.

−1

10

11010

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MGP090

30

handbook, halfpage

I

D

(A)

20

10

0

0

VDS= 10 V.

51015

MGP091

V

(V)

GS

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992 4

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF177

400

handbook, halfpage

R

DS(on)

(mΩ)

300

200

100

0

ID= 5 A; VGS= 10 V.

50 100 150

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical
values.

MGP092

C

is

C

os

MBK408

VDS (V)

1200

handbook, halfpage

C

(pF)

800

400

0

0

VGS= 0; f = 1 MHz.

20 40

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

60

300

handbook, halfpage

C

rs

(pF)

200

100

0

0

10 5020 30 40

VGS= 0; f = 1 MHz.

V

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

MGP093

DS

(V)

September 1992 5