Philips blf175 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D065

BLF175

HF/VHF power MOS transistor

Product specification
Supersedes data of 1997 Dec 15

2003 Jul 22

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applicationsintheHF/VHF frequency
range.

Thetransistorhas a4-lead,SOT123A
flange package, with a ceramic cap.
All leads are isolated from the flange.

Amarkingcode, showinggate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.

PIN CONFIGURATION

ok, halfpage

1

23

4

MSB057

g

MBB072

d

s

Fig.1 Simplified outline and symbol.

CAUTION

This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischarge duringtransport andhandling.For furtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

PINNING - SOT123A

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that theBeO disc isnot damaged. All personswho handle, useor dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use,dispose of as chemical orspecial waste according to

WARNING

the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source test circuit.

MODE OF

OPERATION

(MH

f

)

Z

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

(dB)

class-A 28 50 800 8 (PEP) >24 −<−40
class-AB 28 50 150 30 (PEP) typ. 24 typ. 40

(1)

typ. −35

CW, class-B 108 50 30 30 typ. 20 typ. 65 −

Note

1. 2-tone efficiency.

3

2003 Jul 22 2

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 125 V
gate-source voltage − 20 V
DC drain current − 4A
total power dissipation Tmb≤ 25 °C − 68 W
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base Tmb=25°C; P
thermal resistance from mounting base to heatsink Tmb=25°C; P

= 68 W 2.6 K/W

tot

= 68 W 0.3 K/W

tot

10

handbook, halfpage

I

D

(A)

(1)

1

−1

10

110

(1) Current is this area may be limited by R
(2) Tmb = 25 °C.

Fig.2 DC SOAR.

(2)

VDS (V)

DSon

120

T

MGP063

(°C)

h

MRA905

2

10

.

100

handbook, halfpage

P

tot

(W)

80

60

40

20

0

0 40 80 160

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

Fig.3 Power derating curves.

2003 Jul 22 3

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID = 100 mA; VGS = 0 125 −−V
drain-source leakage current VGS = 0; VDS = 50 V −−100 µA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of

ID = 10 mA; VDS = 10 V −−100 mV

matched pairs
forward transconductance ID = 1 A; VDS = 10 V 1.1 1.6 − S
drain-source on-state resistance ID = 1 A; VGS = 10 V − 0.75 1.5 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 5.5 − A
input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 130 − pF
output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 36 − pF
feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 3.7 − pF

VGS group indication

GROUP

A 2.0 2.1 O 3.3 3.4

B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3

L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

2003 Jul 22 4

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

10

VDS= 10 V.

−2

−1

10

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageas afunctionof draincurrent;typical
values.

MGP064

GS

MGP065

(V)

handbook, halfpage

1

6

I

D

(A)

4

2

0

0

VDS=10V;Tj=25°C.

510

V

Fig.5 Drain current as a function of gate-source

voltage; typical values.

1.5

handbook, halfpage

R

DS(on)

(Ω)

1

0.5

0

0 50 100 150

ID= 1 A; VGS= 10 V.

Tj (°C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MGP066

400

handbook, halfpage

C

(pF)

300

200

100

0

0

VGS= 0; f = 1 MHz.

C

is

C

os

10 50

20 30 40

MGP067

VDS (V)

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

2003 Jul 22 5

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

150

handbook, halfpage

C

rs

(pF)

100

50

0

0

VGS= 0; f = 1 MHz.

10 50

20 30 40

V

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

MGP068

DS

(V)

APPLICATION INFORMATION FOR CLASS-A OPERATION

Th=25°C; R

= 0.3 K/W; unless otherwise specified.

th mb-h

RF performance in SSB operation in a common source circuit.
f

= 28.000 MHz; f2= 28.001 MHz.

1

P

L

(W)

0 to 8 (PEP) 28 50 800 > 24

f

(MHz)

V

(V)

DS

I

DQ

(mA)

G

p

(dB)

typ. 28

d

3

(1)

(dB)

>−40

typ. −44

d

5

(1)

(dB)

<−40

typ. −64

R

(Ω)

24
24

GS

Note

1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.

2003 Jul 22 6

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

40

handbook, halfpage

G

p

(dB)

30

20

10

0

0 5 10 20

Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.

15

PL (W) PEP

Fig.9 Power gain as a function of load power;

typical values.

MGP069

handbook, halfpage

0

d

3

(dB)

−20

−40

−60

−80

0 5 10 20

Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.

MGP070

15

PL (W) PEP

Fig.10 Third order intermodulation distortion as a

function of load power; typical values.

40

handbook, halfpage

G

p

(dB)

30

20

10

0

01020 40

Class-A operation; VDS = 50 V; IDQ = 0.8 A;
PL = 8 W (PEP); RGS = 24 Ω; f1− f2= 1 MHz.

30

f (MHz)

Fig.11 Power gain as a function of frequency;

typical values.

MGP071

30

MGP072

f (MHz)

−20

handbook, halfpage

d

3

(dB)

−40

−60

01020 40

Class-A operation; VDS = 50 V; IDQ = 0.8 A;
PL = 8 W (PEP); RGS = 24 Ω; f1− f2= 1 MHz.

Fig.12 Third order intermodulation distortion as a

function of frequency; typical values.

2003 Jul 22 7

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

C4

handbook, full pagewidth

R2

f = 28 MHz.

50 Ω
input

C1

D.U.T.

T1

C2

+V

R1

L1

C3

G

L2

C6

C7

L3

C8

+V

D

Fig.13 Test circuit for class-A operation.

C5

R3

MGP073

L4

C9

50 Ω
output

2003 Jul 22 8

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

List of components (class-A test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 multilayer ceramic chip capacitor

(note 1)
C2 multilayer ceramic chip capacitor 3 × 10 nF 2222 852 47103
C3, C4, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C8 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109
C9 multilayer ceramic chip capacitor

(note 1)
L1 4 turns enamelled 0.6 mm copper

wire

L2 36 turns enamelled 0.7 mm copper

wire wound on a rod grade 4B1

Ferroxcube drain choke
L3 grade 3B Ferroxcube wideband RF

choke
L4 8 turns enamelled 1 mm copper wire 189 nH length 9.5 mm;

R1 0.4 W metal film resistor 24 Ω
R2 0.4 W metal film resistor 1500 Ω
R3 0.4 W metal film resistor 10 Ω
T1 4 : 1 transformer; 18 turns twisted

pair of 0.25 mm copper wire with

10 twists per cm, wound on a grade

4C6 toroidal core

39 pF

24 pF

86 nH length 3.3 mm;

int. dia. 5 mm;
leads 2 × 2 mm

20 µH length 30 mm;

int. dia. 5 mm

int. dia. 5 mm;
leads 2 × 3 mm

dimensions
9 × 6 × 3mm

4330 030 30031

4312 020 36640

4322 020 97171

Note

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2003 Jul 22 9

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

handbook, full pagewidth

mounting screw

strap

100

90

strap

L3

+V

R3

DD

C8

L4

C9

MGP074

+V

G

L1

C3

R1

T1

C2

C1

R2

Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth.

Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts.

C6

L2

C7

C5

C4

Fig.14 Component layout for 28 MHz class-A test circuit.

2003 Jul 22 10

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th = 25 °C; R
RF performance in SSB operation in a common source circuit.
f

= 28.000 MHz; f2 = 28.001 MHz.

1

= 0.3 K/W; unless otherwise specified.

th mb-h

P

L

(W)

30 (PEP) 28 50 150 typ. 24 typ. 40

f

(MHz)

V

(V)

DS

I

DQ

(mA)

G

p

(dB)

η

(%)

D

(2)

d

3

(1)

(dB)

typ. −35 typ. −40 22

d

(dB)

5

(1)

R

(Ω)

GS

Notes

1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.

2. 2-tone efficiency.

Ruggedness in class-AB operation

The BLF175 is capable of withstanding aload mismatch corresponding to VSWR = 50 through all phases at P

=30W

L

single tone under the following conditions:
VDS = 50 V; f = 28 MHz.

28

handbook, halfpage

G

p

(dB)

26

MGP076

60

handbook, halfpage

η

D

(%)

50

MGP077

24

22

20

0 204060

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

PL (W) PEP

Fig.15 Power gain as a function of load power;

typical values.

2003 Jul 22 11

40

30

20

0 204060

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

PL (W) PEP

Fig.16 Two tone efficiency as a function of load

power; typical values.

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

handbook, halfpage

0

d

3

(dB)

−20

−40

−60

0 204060

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

MGP078

PL (W) PEP

Fig.17 Third order intermodulation distortion as a

function of load power; typical values.

handbook, halfpage

0

d

5

(dB)

−20

−40

−60

0 204060

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

MGP079

PL (W) PEP

Fig.18 Fifth order intermodulation distortion as a

function of load power; typical values.

handbook, full pagewidth

50 Ω

output

f = 28 MHz.

C1

C2

C3

C4

R2

L1

+V

L2

R1

C5

G

D.U.T.

Fig.19 Test circuit for class-AB operation.

2003 Jul 22 12

L3

C6

L4

C7

R3

C10

C8

C11

C9

C12

output

+V

D

MGP080

50 Ω

L5

L6

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

List of components (class-AB test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C10 multilayer ceramic chip capacitor

(note 1)
C2, C4, C8, C11 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3 multilayer ceramic chip capacitor

(note 1)
C5, C6, C9 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C7 multilayer ceramic chip capacitor

(note 1)
C12 aluminium electrolytic capacitor 10 µF, 63 V 2222 030 28109
L1 9 turns enamelled 1 mm copper wire 280 nH length 11 mm;

L2, L3 stripline (note 2) 30 Ω length 10 mm;

L4 14 turns enamelled 1 mm copper

wire

L5 10 turns enamelled 1 mm copper

wire

L6 grade 3B Ferroxcube wideband RF

choke
R1 0.4 W metal film resistor 22 Ω
R2 0.4 W metal film resistor 1 MΩ
R3 0.4 W metal film resistor 10 Ω

62 pF

51 pF

10 pF

int. dia. 6 mm;
leads 2 × 4mm

width 6 mm

1650 nH length 20 mm;

int. dia. 12 mm;
leads 2 × 2mm

380 nH length 13 mm;

int. dia. 7 mm;
leads 2 × 3mm

4312 020 36640

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1.6 mm.

2003 Jul 22 13

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

handbook, full pagewidth

strap

mounting screw

C2 C4

150

strap

rivet

R3

C9

R2

C5

R1

L1

L2 L3

C3C1

C6

L6

L4

L5

C7

C12

C8 C11

strap

70

C10

MGP081

Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth.

Earth connections are made by means of hollow rivets and straps at the two edges and under the source contacts.

Fig.20 Component layout for 28 MHz class-AB test circuit.

2003 Jul 22 14

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

30

MGP083

f (MHz)

30

handbook, halfpage

Z

i

(Ω)

20

10

0

−10

−20

01020 40

Class-ABoperation; VDS=50V;IDQ= 0.15 A;

= 30 W (PEP); RGS=22Ω.

P

L

r

i

x

i

Fig.21 Input impedance as afunction of frequency

(series components); typical values.

50

handbook, halfpage

Z

L

(Ω)

40

30

20

10

0

0102030

Class-ABoperation; VDS=50V;IDQ= 0.15 A;

= 30 W (PEP); RGS=22Ω.

P

L

R

L

X

L

MGP084

f (MHz)

Fig.22 Load impedance as afunction of frequency

(series components); typical values.

30

handbook, halfpage

G

p

(dB)

20

10

0

0 102030

Class-ABoperation; VDS=50V;IDQ= 0.15 A;

= 30 W (PEP); RGS=22Ω.

P

L

f (MHz)

Fig.23 Power gain as a function of frequency;

typical values.

MGP085

2003 Jul 22 15

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

APPLICATION INFORMATION FOR CLASS-B OPERATION

RF performance in SSB operation in a common source circuit.

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

R

(Ω)

CW, class-B 108 50 30 30 typ. 20 typ. 65 10

10

handbook, halfpage

Z

i

(Ω)

5

0

−5
0

100

MGP086

r

i

x

i

f (MHz)

200

50

handbook, halfpage

Z

L

(Ω)

40

30

20

10

0

0 200

100

X

L

R

L

MGP087

f (MHz)

GS

Class-B operation; VDS= 50 V; IDQ= 30 mA;

= 30 W; RGS=10Ω.

P

L

Fig.24 Input impedance as afunction of frequency

(series components); typical values.

Class-B operation; VDS= 50 V; IDQ= 30 mA;

= 30 W; RGS=10Ω.

P

L

Fig.25 Load impedance as afunction of frequency

(series components); typical values.

2003 Jul 22 16

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-B operation; VDS= 50 V; IDQ= 30 mA;

= 30 W; RGS=10Ω.

P

L

100

f (MHz)

Fig.26 Power gain as a function of frequency;

typical values.

MGP088

200

2003 Jul 22 17

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

BLF175 scattering parameters

VDS= 50 V; ID= 100 mA; note 1.

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.86 −110.20 36.90 114.20 0.02 25.20 0.64 −84.90
10 0.83 −139.40 20.39 93.30 0.02 5.10 0.55 −112.00
20 0.85 −155.70 9.82 72.60 0.02 −13.40 0.60 −129.30
30 0.88 −161.50 5.96 59.30 0.02 −24.70 0.69 −138.00
40 0.90 −164.90 3.98 49.30 0.02 −31.70 0.76 −144.30
50 0.92 −167.10 2.83 41.90 0.01 −35.80 0.82 −149.30
60 0.94 −169.00 2.11 36.00 0.01 −36.80 0.86 −153.50
70 0.96 −170.70 1.63 31.20 0.01 −33.70 0.89 −157.00
80 0.96 −172.20 1.29 27.40 0.00 −23.00 0.91 −159.90
90 0.97 −173.40 1.04 24.20 0.00 3.30 0.92 −162.40

100 0.97 −174.30 0.86 21.70 0.00 42.50 0.94 −164.50
125 0.99 −176.50 0.57 16.40 0.01 81.60 0.95 −168.80
150 0.99 −178.10 0.40 13.40 0.01 88.70 0.97 −171.90
175 0.99 −179.80 0.30 11.60 0.02 90.70 0.98 −174.50
200 1.00 179.20 0.23 11.00 0.02 90.80 0.98 −176.70
250 1.00 177.00 0.15 11.70 0.03 90.50 0.99 179.80
300 1.00 175.10 0.11 16.70 0.03 89.60 0.99 176.90
350 0.99 173.30 0.08 24.10 0.04 88.30 0.99 174.30
400 1.00 171.80 0.07 33.10 0.05 88.00 0.99 171.90
450 0.99 170.10 0.07 42.70 0.05 87.80 0.99 169.60
500 0.99 168.50 0.07 51.90 0.06 86.50 0.99 167.40
600 0.99 165.40 0.07 64.20 0.07 84.90 0.99 163.10
700 0.99 162.30 0.09 70.60 0.09 83.10 0.98 158.90
800 0.99 158.90 0.10 73.80 0.10 82.20 0.98 154.80
900 0.99 155.30 0.12 74.90 0.12 80.70 0.97 150.60

1000 0.98 151.80 0.14 76.40 0.14 79.80 0.97 146.20

Note

1. For more extensive s-parameters see internet website:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast

2003 Jul 22 18

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

D

1

H

43

α

q

U

1

C

B

w

C

M M

2

b

A

c

U

p

2

1

w

2

H

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.385

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.78

9.42

F

1

20.71

2.72

19.93

2.31

0.815

0.107

0.091

0.131

0.785

0.120

REFERENCES

pH

3.33

3.04

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

UNIT

mm

inches

A

7.47

6.37

0.294

0.251

OUTLINE
VERSION

SOT123A

0.229

0.219

MM

1

24.87

24.64

0.980

0.970

M

A

B

U2U

1

6.48

6.22

0.255

0.385

0.245

0.370

U

3

w

1

3

9.78

9.39

EUROPEAN

PROJECTION

Q

w

αU

2

0.510.25
45°

0.0200.010

ISSUE DATE

99-03-29

2003 Jul 22 19

Philips Semiconductors Product specification

HF/VHF power MOS transistor BLF175

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For datasheets describingmultiple type numbers,the highest-level productstatus determinesthe data sheetstatus.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limiting values givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyotherconditions abovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplicationswill be
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance.When theproduct isin full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Jul 22 20

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot form part of any quotation orcontract, is believed to be accurate andreliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/03/pp21 Date of release: 2003 Jul 22 Document order number: 9397 750 11582

SCA75