Philips blf147_n Datasheet

BLF147

VHF power MOS transistor

Rev. 06 — 5 December 2006 Product data sheet

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NXP Semiconductors

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

2 of 15

VHF power MOS transistor BLF147

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Industrial and military applications in the HF/VHF
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
packagewithaceramic cap.All leadsare isolatedfrom the
flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.

CAUTION

PINNING - SOT121B

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

handbook, halfpage

14

g

32

MAM267

d
s

This product issupplied in anti-static packing toprevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and

Fig.1 Simplified outline and symbol.

SNW-FQ-302B.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source test circuit.

MODE OF

OPERATION

f

(MHz)

V

(V)

DS

P

(W)

L

G

(dB)

p

η

D

(%)

d

3

(dB)

d

5

(dB)

SSB, class-AB 28 28 150 (PEP) >17 >35 <−30 <−30
CW, class-B 108 28 150 typ. 14 typ. 70 −−

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. Afteruse, dispose of as chemicalor special waste accordingto the regulations applying atthe location of
the user. It must never be thrown out with the general or domestic waste.

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

3 of 15

VHF power MOS transistor BLF147

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 25 A
total power dissipation Tmb≤ 25 °C − 220 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 0.8 K/W
thermal resistance from mounting base to heatsink 0.2 K/W

2

10

handbook, halfpage

I

D

(A)

(1)

10

1

110

(1) Current is this area may be limited by R
(2) Tmb=25°C.

Fig.2 DC SOAR.

MRA904

(2)

2

V

(V)

DS

.

DSon

10

300

handbook, halfpage

P

tot

(W)

200

100

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

(1)

(2)

50 100 150

Fig.3 Power derating curves.

MGP049

Th (°C)

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

4 of 15

VHF power MOS transistor BLF147

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GSth

∆V

GS

g

fs

R

DSon

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID= 100 mA; VGS=0 65 −−V
drain-source leakage current VGS= 0; VDS=28V −−5mA
gate-source leakage current VGS= ±20 V; VDS=0 −−1µA
gate-source threshold voltage ID= 200 mA; VDS=10V 2 − 4.5 V
gate-source voltage difference of

ID= 100 mA; VDS=10V −−100 mV

matched pairs
forward transconductance ID= 8 A; VDS=10V 5 7.5 − S
drain-source on-state resistance ID= 8 A; VGS=10V − 0.1 0.15 Ω
on-state drain current VGS= 10 V; VDS=10V − 37 − A
input capacitance VGS= 0; VDS=28V; f=1MHz − 450 − pF
output capacitance VGS= 0; VDS=28V; f=1MHz − 360 − pF
feedback capacitance VGS= 0; VDS=28V; f=1MHz − 55 − pF

VGS group indicator

GROUP

A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

LIMITS

(V)

GROUP

LIMITS

(V)

MIN. MAX. MIN. MAX.

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

5 of 15

VHF power MOS transistor BLF147

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−2

VDS= 28 V; valid for Th=25to70°C.

−1

10

11010

ID (A)

Fig.4 Temperature coefficient of gate-source

voltageas afunctionofdraincurrent; typical
values.

MGP050

V

GS

MGP051

(V)

60

handbook, halfpage

I

D

(A)

40

20

0

0

VDS=10V.

510 2015

Fig.5 Drain current as a function of gate-source

voltage; typical values.

170

handbook, halfpage

R

DSon

(mΩ)

150

130

110

90

0 50 100 150

ID= 8 A; VGS=10V.

Tj ( C)

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical
values.

MGP052

1400

handbook, halfpage

C

(pF)

1200

800

400

0

01020

VGS= 0; f = 1 MHz.

C

is

C

os

MRA903

30 40

V

(V)

DS

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

6 of 15

VHF power MOS transistor BLF147

500

handbook, halfpage

C

rs

(pF)

400

300

200

100

0

01020

VGS= 0; f = 1 MHz.

MRA902

30

40

V

(V)

DS

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

APPLICATION INFORMATION FOR CLASS-AB OPERATION

RF performance in SSB operation in a common source class-AB circuit.
Th=25°C; R

= 0.2 K/W; RGS= 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz; unless otherwise specified.

th mb-h

P

(W)

L

f

(MHz)

V

(V)

DS

I

DQ

(A)

G

(dB)

20 to 150 (PEP) 28 28 1 >17

typ. 19

d

p

η

D

(%)

>35

typ. 40

3

(dB)

(note 2)

<−30

typ. −34

d

5

(dB)

(note 2)

<−30

typ. −40

Notes

1. Optimum load impedance: 2.1 + j0 Ω.

2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.

Ruggedness in class-AB operation

The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: V

= 28 V; f = 28 MHz at rated load power.

DS

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

7 of 15

VHF power MOS transistor BLF147

30

handbook, halfpage

G

p

(dB)

20

10

0 200

Class-AB operation; VDS= 28 V; IDQ= 1 A;

= 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.

R

GS

100

PL (W) PEP

MGP053

Fig.9 Power gain as a function of load power;

typical values.

60

handbook, halfpage

η

D

(%)

40

20

0

0

Class-AB operation; VDS= 28 V; IDQ=1A;

= 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.

R

GS

100 200

PL (W) PEP

Fig.10 Efficiency as a function of load power;

typical values.

MGP054

−20

handbook, halfpage

d

3

(dB)

−30

−40

−50

−60

0

Class-AB operation; VDS= 28 V; IDQ=1A;

= 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.

R

GS

100 200

PL (W) PEP

MGP055

Fig.11 Third order intermodulation distortion as a

function of load power; typical values.

−20

handbook, halfpage

d

5

(dB)

−30

−40

−50

−60

0

Class-AB operation; VDS= 28 V; IDQ=1A;

= 9.8 Ω; f1= 28.000 MHz; f2= 28.001 MHz.

R

GS

100 200

PL (W) PEP

MGP056

Fig.12 Fifth order intermodulation distortion as a

function of load power; typical values.

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

8 of 15

VHF power MOS transistor BLF147

handbook, full pagewidth

input
50 Ω

C1

C2

C3

C8

D.U.T.

L1

R3

R4

+V

G

L2

R2R1

C4

L3

C5

C9

L4

R5

L6L5

C7

C10

C12

C11

C14

C15

C13

output

50 Ω

L7

C6

f = 28 MHz.

+V

D

MGP057

Fig.13 Test circuit for class-AB operation.

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

9 of 15

VHF power MOS transistor BLF147

List of components (see Fig 13).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C3, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2, C8, C9 multilayer ceramic chip capacitor;

note 1
C4, C5 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C6 multilayer ceramic chip capacitorsin

parallel
C7 electrolytic capacitor 2.2 µF, 63 V
C10 multilayer ceramic chip capacitor;

note 1
C11, C12 multilayer ceramic chip capacitor;

note 1
C15 multilayer ceramic chip capacitor;

note 1
L1 6 turns enamelled 0.7 mm copper

wire

L2, L3 stripline; note 2 41.1 Ω length 13 × 6mm
L4 4 turns enamelled 1.5 mm copper

wire

L5, L6 grade 3B Ferroxcube wideband HF

choke
L7 3 turns enamelled 2.2 mm copper

wire

R1, R2 1 W metal film resistor 19.6 Ω 2322 153 51969
R3 0.4 W metal film resistor 10 kΩ 2322 151 71003
R4 0.4 W metal film resistor 1 MΩ 2322 151 71005
R5 1 W metal film resistor 10 Ω 2322 153 51009

75 pF

3 × 100 nF 2222 852 47104

100 pF

150 pF

240 pF

145 nH length 5 mm;

int. dia. 6 mm;
leads 2 × 5mm

148 nH length 8 mm;

int. dia. 10 mm;
leads 2 × 5mm

4312 020 36642

79 nH length 8 mm;

int. dia. 8 mm;
leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε
thickness 1.6 mm.

= 2.2),

r

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

10 of 15

VHF power MOS transistor BLF147

30

handbook, halfpage

G

P

(dB)

20

10

0

0

Class-AB operation; VDS= 28 V; IDQ=1A;

= 6.25 Ω; PL= 150 W (PEP); RL= 2.1 Ω.

R

GS

10 20 30

f (MHz)

Fig.14 Power gain as a function of frequency;

typical values.

MGP058

f (MHz)

MGP059

r

i

x

i

10

handbook, halfpage

Z

i

(Ω)

5

0

−5
0

Class-AB operation; VDS= 28 V; IDQ=1A;

= 6.25 Ω; PL= 150 W (PEP); RL= 2.1 Ω.

R

GS

10 20

Fig.15 Input impedance as a functionof frequency

(series components); typical values.

30

150

MGP061

f (MHz)

r

i

x

i

handbook, halfpage

4

Z

i

(Ω)

2

0

−2

−4

0 50 100 200

Class-B operation; VDS=28V;IDQ= 0.2 A;

=15Ω; PL= 150 W.

R

GS

Fig.16 Input impedance as a functionof frequency

(series components); typical values.

L

L

150

MGP062

f (MHz)

handbook, halfpage

3

Z

L

(Ω)

2

1

0

−1
0 50 100 200

Class-B operation; VDS= 28 V; IDQ= 0.2 A;

=15Ω; PL= 150 W.

R

GS

R

X

Fig.17 Load impedance as a functionof frequency

(series components); typical values.

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

11 of 15

VHF power MOS transistor BLF147

30

handbook, halfpage

G

p

(dB)

20

10

0

0

Class-B operation; VDS= 28 V; IDQ= 0.2 A;

=15Ω; PL= 150 W.

R

GS

50 100 200150

f (MHz)

Fig.18 Power gain as a function of frequency;

typical values.

MGP060

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

12 of 15

VHF power MOS transistor BLF147

BLF147 scattering parameters

VDS= 28 V; ID= 1000 mA; note 1

f (MHz)

s

11

s

21

s

12

s

22

|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ

5 0.91 −170.00 23.90 93.40 0.01 5.80 0.88 −171.20
10 0.91 −174.60 12.25 89.40 0.01 3.60 0.89 −177.20
20 0.92 −177.40 5.94 81.00 0.01 5.40 0.83 −179.60
30 0.92 −178.40 3.87 79.10 0.01 8.90 0.86 −178.90
40 0.92 −178.80 2.84 75.70 0.01 12.00 0.85 −178.60
50 0.92 −178.80 2.26 73.30 0.01 16.90 0.87 −176.90
60 0.92 −179.00 1.88 69.80 0.01 20.30 0.90 −177.30
70 0.93 −179.20 1.58 66.20 0.01 24.00 0.90 −178.10
80 0.93 −179.60 1.36 63.20 0.01 28.80 0.90 −178.40
90 0.93 −179.70 1.19 60.40 0.01 34.20 0.90 −178.60

100 0.94 −179.70 1.05 57.00 0.01 39.30 0.90 −179.40
125 0.95 179.50 0.77 49.30 0.01 52.30 0.88 179.20
150 0.95 179.00 0.60 45.80 0.01 64.90 0.91 −179.50
175 0.96 178.10 0.49 41.50 0.02 72.40 0.95 179.80
200 0.96 177.50 0.40 36.80 0.02 75.80 0.94 177.70
250 0.97 175.80 0.28 33.20 0.03 82.30 0.95 176.20
300 0.98 174.20 0.22 30.10 0.03 83.00 0.96 173.60

350 0.98 172.70 0.17 31.00 0.04 85.00 0.97 171.90

400 0.98 171.10 0.14 32.40 0.05 84.90 0.97 169.50
450 0.98 169.50 0.12 36.10 0.05 85.90 0.97 167.70
500 0.98 167.90 0.11 39.90 0.06 84.30 0.98 165.50
600 0.98 164.80 0.10 50.20 0.07 83.20 0.97 161.50
700 0.98 161.60 0.10 57.90 0.09 81.70 0.97 157.50
800 0.98 158.20 0.11 63.70 0.10 81.00 0.97 153.50
900 0.97 154.60 0.13 67.20 0.12 79.50 0.97 149.30

1000 0.97 151.10 0.14 70.20 0.14 78.80 0.96 144.90

Note

1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.

NXP Semiconductors Product specification

Rev. 06 - 5 December 2006

13 of 15

VHF power MOS transistor BLF147

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D

A

F

D

1

q

U

1

C

B

H

b

43

α

p

12

H

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

7.27

6.17

0.286

0.243

5.82

5.56

0.229

0.219

c

0.16

0.10

0.006

0.004

Db

12.86

12.59

0.506

0.496

D

12.83

12.57

0.505

0.495

F

1

2.67

28.45

2.41

25.52

1.120

0.105

0.095

1.005

0.130

0.120

pH

3.30

3.05

Q

4.45

3.91

0.175

0.154

q

18.42

0.725

w

MM

C

2

A

U

2

w

MMM

AB

1

0 5 10 mm

U

U

1

24.90

24.63

0.98

0.97

6.48

6.22

0.255

0.245

3

2

12.32

12.06

0.485

0.475

U

scale

w1w

0.25

0.01

c

3

Q

αU

2

0.51
45°

0.02

OUTLINE

VERSION

SOT121B 99-03-29

REFERENCES

IEC JEDEC EIAJ

EUROPEAN

PROJECTION

ISSUE DATE

NXP Semiconductors

Rev. 06 - 5 December 2006

14 of 15

Legal information

Data sheet status

BLF147

VHF power MOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document mayhavechangedsince this document was published andmaydifferin case of multiple devices. The latestproduct status

information is available on the Internet at URL

[1][2]

Product status

Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included hereinand shall have no liabilityfor the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the sameproduct type number(s) andtitle. A shortdata sheet is intended
for quick reference onlyand should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does notgive any representations or
warranties, expressed or implied,as to the accuracy orcompleteness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reservesthe right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of a NXPSemiconductors product canreasonablybe expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage to thedevice.Limiting values arestress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published

http://www.nxp.com/profile/terms, including those pertaining to warranty,

at
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
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or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of anylicense under any copyrights, patents
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Notice: All referenced brands,productnames, service namesandtrademarks
are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

NXP Semiconductors

Rev. 06 - 5 December 2006

15 of 15

BLF147

VHF power MOS transistor

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF147_6 20061205 Product data sheet - BLF147_5
Modifications:
BLF147_5 20061108 Product data sheet - BLF147_4
BLF147_4

(9397 750 11593)
BLF147_3

(9397 750 08411)
BLF147_CNV_2

(9397 750 xxxxx)

• Correction made to page 9 “List of components”

20030901 Product specification - BLF147_3

20010523 Product specification - BLF147_CNV_2

19971215 Product specification - -

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2006. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 5 December 2006

Document identifier: BLF147_6