Philips BLF147 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLF147

VHF power MOS transistor

Product specification

September 1992

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.

The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.

A marking code, showing gate-source
voltage (V

) information is provided

GS

for matched pair applications. Refer
to 'General' section for further
information.

PIN CONFIGURATION

ok, halfpage

43

g

MBB072

21

MLA876

d

s

Fig.1 Simplified outline and symbol.

CAUTION

The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.

WARNING

PINNING - SOT121

PIN DESCRIPTION

1 drain
2 source
3 gate
4 source

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

= 25 °C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

P

(W)

L

G

p

(dB)

η

(%)

D

d

3

(dB)

d

5

(dB)

SSB, class-AB 28 28 150 (PEP) > 17 > 35 <−30 <−30
CW, class-B 108 28 150 typ. 70 typ. 70 −−

September 1992 2

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

±V

GS

I

D

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-mb

R

th mb-h

drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 25 A
total power dissipation up to Tmb = 25 °C − 220 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 0.8 K/W
thermal resistance from mounting base to heatsink 0.2 K/W

2

10

handbook, halfpage

I

D

(A)

(1)

10

1

110

(1) Current is this area may be limited by R
(2) Tmb = 25 °C.

Fig.2 DC SOAR.

MRA904

(2)

2

V

(V)

DS

DS(on)

10

.

300

handbook, halfpage

P

tot

(W)

200

100

0

0

(1) Short-time operation during mismatch.
(2) Continuous operation.

(1)

(2)

50 100 150

Fig.3 Power/temperature derating curves.

MGP049

Th (°C)

September 1992 3

Philips Semiconductors Product specification

VHF power MOS transistor BLF147

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

∆V

GS

g

fs

R

DS(on)

I

DSX

C

is

C

os

C

rs

drain-source breakdown voltage ID = 100 mA; VGS = 0 65 −−V
drain-source leakage current VGS = 0; VDS = 28 V −−5mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
gate-source threshold voltage ID = 200 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of

ID = 100 mA; VDS = 10 V −−100 mV

matched pairs
forward transconductance ID = 8 A; VDS = 10 V 5 7.5 − S
drain-source on-state resistance ID = 8 A; VGS = 10 V − 0.1 0.15 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 37 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 450 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 360 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 55 − pF

handbook, halfpage

0

T.C.

(mV/K)

−1

−2

−3

−4

−5

−2

VDS = 28 V; valid for Th = 25 to 70 °C.

−1

10

11010

ID (A)

Fig.4 Temperature coefficient of gate-source

voltage as a function of drain current, typical
values.

MGP050

V

GS

MGP051

(V)

60

handbook, halfpage

I

D

(A)

40

20

0

0

VDS= 10 V.

510 2015

Fig.5 Drain current as a function of gate-source

voltage, typical values.

September 1992 4