Page 1
BLF145
HF power MOS transistor
Rev. 04 — 5 January 2007 Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
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[email protected] use [email protected]
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors
Page 2
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
2 of 15
HF power MOS transistor BLF145
FEATURES
• High power gain
• Low noise figure
• Good thermal stability
• Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. Thetransistoris encapsulated
in a 4-lead, SOT123A flange
package, with a ceramic cap. All
leads are isolated from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
PINNING - SOT123A
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
handbook, halfpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischarge during transportandhandling. Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION f (MHz) V
SSB, class-A 28 28 1.3 8 (PEP) >24 −<−40
SSB, class-AB 28 28 − 30 (PEP) typ. 20 typ. 40 typ. −35
Note
1. 2-tone efficiency.
(V) ID(A) PL(W) Gp(dB) ηD(%)
DS
(1)
d3(dB)
Page 3
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
3 of 15
HF power MOS transistor BLF145
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
GSS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 6A
total power dissipation Tmb≤ 25 °C − 68 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to mounting base 2.6 K/W
thermal resistance from mounting base to heatsink 0.3 K/W
10
handbook, halfpage
I
D
(A)
10
(1) Current is this area may be limited by R
(2) Tmb=25°C.
(1)
1
−1
110
Fig.2 DC SOAR.
(2)
VDS (V)
DSon
MRA901
2
10
.
100
handbook, halfpage
P
tot
(W)
80
60
40
20
0
(1) Short-time operation during mismatch.
(2) Continuous operation.
(1)
(2)
40 80 160
120
MGP035
Th (°C)
Fig.3 Power derating curves.
Page 4
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
4 of 15
HF power MOS transistor BLF145
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GS
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage ID = 10 mA; VGS = 0 65 −−V
drain-source leakage current VGS = 0; VDS = 28 V −−2mA
gate-source leakage current VGS = ±20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of
ID = 10 mA; VDS = 10 V −−100 mV
matched devices
forward transconductance ID = 1.5 A; VDS = 10 V 1.2 −− S
drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 10 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 125 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 75 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 7 − pF
VGS group indicator
GROUP
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
LIMITS
(V)
GROUP
LIMITS
(V)
MIN. MAX. MIN. MAX.
Page 5
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
5 of 15
HF power MOS transistor BLF145
handbook, halfpage
4
T.C.
(mV/K)
2
0
−2
−4
−6
10
VDS=10V.
2
10
3
10
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltageasa function ofdraincurrent; typical
values.
MGP036
15
MGP037
VGS (V)
12
handbook, halfpage
I
D
(A)
8
4
4
10
0
05
VDS=10V.
Tj = 25 °C
125 °C
10 20
Fig.5 Drain current as a function of gate-source
voltage; typical values.
0.8
handbook, halfpage
R
DS(on)
(Ω)
0.6
0.4
0.2
0
040
ID= 1.5 A;
=10V.
V
GS
80 160
120
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
MGP038
240
handbook, halfpage
C
(pF)
180
120
60
0
01020 40
VGS= 0; f = 1 MHz.
C
is
C
os
MGP039
30
V
(V)
DS
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
Page 6
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
6 of 15
HF power MOS transistor BLF145
20
handbook, halfpage
C
rs
(pF)
10
0
010
VGS= 0; f = 1 MHz.
20
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
MRA900
30
Page 7
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
7 of 15
HF power MOS transistor BLF145
APPLICATION INFORMATION FOR CLASS-A OPERATION
Th= 25 °C; R
RF performance in SSB operation in a common source class-A circuit.
= 0.3 K/W; R1 = 26 Ω; unless otherwise specified.
th mb-h
MODE OF
OPERATION
f
(MHz)
V
(V)
DS
I
(A)
D
SSB, class-A 28 28 1.3 8 (PEP) >24
P
(W)
L
G
P
(dB)
typ. 27
d
3
(1)
(dB)
>−40
typ. −43
d
5
(1)
(dB)
<−40
typ. −70
Z
L
(Ω)
18.4 + j5.2
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
30
handbook, halfpage
G
p
(dB)
28
26
MGP040
−20
handbook, halfpage
d
3
(dB)
−30
−40
−50
MGP041
24
0
Class-A operation; VDS= 28 V; ID= 1.3 A;
= 0.3 K/W; f = 28 MHz.
R
th mb-h
solid line: T
dotted line: T
=25°C.
h
=70°C.
h
10 20 30
PL (W) PEP
Fig.9 Power gain as a function of load power;
typical values.
−60
0102030
Class-A operation; VDS= 28 V; ID= 1.3 A;
= 0.3 K/W; f = 28 MHz.
R
th mb-h
solid line: T
dotted line: T
=25°C.
h
=70°C.
h
PL (W) PEP
Fig.10 Third order intermodulation distortion as a
function of load power; typical values.
Page 8
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
8 of 15
HF power MOS transistor BLF145
handbook, full pagewidth
input
50 Ω
C1
C2
C3
D.U.T.
+V
L2
R1
C4
G
L1
L3
L4
C7
C5
L5
C6
R2
L6
C11
C8
C9
C10
C12
+V
output
50 Ω
D
MGP042
f = 28 MHz.
Fig.11 Test circuit for class-A operation.
List of components (see Fig.11)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C3, C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015
C2, C10 multilayer ceramic chip capacitor; note 1 39 pF
C4, C7 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C5, C6 multilayer ceramic chip capacitor; note 1 27 pF
C11 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C12 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
L1 12 turns enamelled 0.5 mm copper wire 307 nH length 8 mm;
int. dia. 4 mm
L2, L3 stripline; note 2 30 Ω length 15 × 6mm
L4 14 turns enamelled 1 mm copper wire 1039 nH length 14 mm;
int. dia. 9 mm
L5 9 turns enamelled 1 mm copper wire 305 nH length 10 mm;
int. dia. 6 mm
L6 grade 3B Ferroxcube wideband HF choke 4312 020 36640
R1 0.25 W metal film resistor 26 Ω
R2 0.25 W metal film resistor 10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy dielectric (ε
= 4.5),
r
thickness 1.6 mm..
Page 9
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
9 of 15
HF power MOS transistor BLF145
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th=25°C; R
RF performance in SSB operation in a common source class-AB circuit.
= 0.3 K/W; R1 = 34 Ω; unless otherwise specified.
th mb-h
MODE OF
OPERATIONf(MHz)
V
(V)
DS
I
DQ
(A)
P
(W)
L
G
p
(dB)
η
(%)
D
d
(dB)
3
(1)
d
(dB)
5
(1)
Z
(Ω)
L
SSB, class-AB 28 28 0.25 30 (PEP) typ. 20 typ. 40 typ. −35 typ. −40 8.9 + j1.0
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
power the values should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF145 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at P
=30W
L
single tone under the following conditions:
= 28 V; f = 28 MHz; Th=25°C; R
V
DS
22
handbook, halfpage
G
p
(dB)
20
= 0.3 K/W at rated load power.
th mb-h
MGP043
60
handbook, halfpage
η
D
(%)
40
MGP044
18
16
0
Class-AB operation; VDS= 28 V; IDQ= 0.25 A;
= 0.3 K/W; f = 28 MHz.
R
th mb-h
solid line: T
dotted line: T
=25°C.
h
=70°C.
h
20 40 60
PL (W)
Fig.12 Power gain as a function of load power,
typical values.
20
0
0
Class-AB operation; VDS= 28 V; IDQ= 0.25 A;
= 0.3 K/W; f = 28 MHz.
R
th mb-h
solid line: T
dotted line: T
=25°C.
h
=70°C.
h
20 40 60
PL (W)
Fig.13 Two tone efficiency as a function of load
power, typical values.
Page 10
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
10 of 15
HF power MOS transistor BLF145
handbook, full pagewidth
C7
C11
C8
C9
C10
C12
+V
output
50 Ω
D
MGP045
L5
f = 28 MHz.
input
50 Ω
C1
C2
D.U.T.
+V
L2
R1
C3
G
L1
L3
C6
C4
C5
L4
R2
L6
Fig.14 Test circuit for class-AB operation.
List of components (see Fig.14)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 film dielectric trimmer 5 to 60 pF 2222 809 07011
C3, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C4, C5 multilayer ceramic chip capacitor; note 1 27 pF
C7, C10 multilayer ceramic chip capacitor; note 1 39 pF
C8, C9 film dielectric trimmer 7 to 100 pF 2222 809 07015
C11 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104
C12 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
L1 13 turns enamelled 0.5 mm copper wire 415 nH length 10 mm;
int. dia. 5 mm
L2, L3 stripline; note 2 30 Ω length 15 × 6mm
L4 10 turns enamelled 1 mm copper wire 390 nH length 13 mm;
int. dia. 7 mm
L5 9 turns enamelled 1 mm copper wire 245 nH length 10 mm;
int. dia. 5 mm
L6 grade 3B Ferroxcube wideband HF choke 4312 020 36640
R1 0.5 W metal film resistor 34 Ω
R2 0.25 W metal film resistor 10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy dielectric (εr= 4.5), thickness 1.6 mm.
Page 11
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
11 of 15
HF power MOS transistor BLF145
−20
handbook, halfpage
d
3
(dB)
−30
−40
−50
0
Class-AB operation; VDS= 28 V; IDQ= 0.25 A;
= 0.3 K/W; f = 28 MHz.
R
th mb-h
solid line: T
dotted line: T
=25°C.
h
=70°C.
h
20 40 60
MGP046
PL (W)
Fig.15 Third order intermodulation distortion as a
function of load power, typical values.
−20
handbook, halfpage
d
5
(dB)
−30
−40
−50
0
Class-AB operation; VDS= 28 V; IDQ= 0.25 A;
= 0.3 K/W; f = 28 MHz.
R
th mb-h
solid line: T
dotted line: T
=25°C.
h
=70°C.
h
20 40 60
MGP047
PL (W)
Fig.16 Fifth order intermodulation distortion as a
function of load power, typical values.
21
handbook, halfpage
G
p
(dB)
20
19
030
Class-AB operation; VDS= 28 V; IDQ= 0.25 A;
= 30 W; Th=25°C; R
P
L
=34Ω;ZL= 8.9 + j1 Ω.
R
1
6 121824
= 0.3 K/W;
th mb-h
f (MHz)
Fig.17 Power gain as a function of frequency,
typical values.
MGP048
Table 1
Input impedance as a function of frequency
Class-AB operation;VDS=28V;IDQ= 0.25 A; PL=30W;
T
=25°C; R
h
Z
= 8.9 + j1 Ω.
L
(MHz)
= 0.3 K/W; R1 = 34 Ω;
th mb-h
f
Z
(Ω)
i
1.5 32.9 − j2.2
3.0 32.4 − j4.3
6.0 30.7 − j8.1
10 27.4 − j11.9
15 32.9 − j14.6
20 18.5 − j15.4
25 15.1 − j15.3
30 12.5 − j14.6
Page 12
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
12 of 15
HF power MOS transistor BLF145
BLF145 scattering parameters
VDS= 28 V; ID= 250 mA; note 1
f
(MHz)
s
11
|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ
s
21
s
12
s
22
5 0.90 −70.90 62.40 138.40 0.02 49.80 0.83 −67.60
10 0.81 −108.90 42.47 117.90 0.03 30.70 0.72 −105.00
20 0.76 −140.20 23.90 100.40 0.03 16.40 0.66 −135.80
30 0.75 −151.90 16.27 92.20 0.03 10.50 0.65 −147.90
40 0.75 −157.90 12.18 86.50 0.03 8.00 0.64 −153.40
50 0.75 −161.40 9.70 82.00 0.03 6.60 0.65 −156.40
60 0.76 −163.70 8.01 78.10 0.03 5.80 0.66 −158.30
70 0.77 −165.30 6.78 74.50 0.03 5.60 0.67 −159.70
80 0.77 −166.60 5.85 71.30 0.03 6.20 0.68 −160.50
90 0.78 −167.50 5.14 68.30 0.02 7.30 0.69 −161.20
100 0.79 −168.40 4.56 65.30 0.02 8.80 0.71 −162.00
125 0.81 −170.40 3.48 58.20 0.02 15.50 0.74 −163.70
150 0.83 −172.00 2.74 52.50 0.02 27.00 0.77 −164.90
175 0.85 −173.60 2.23 47.70 0.02 41.30 0.80 −166.20
200 0.87 −175.20 1.86 43.00 0.02 54.50 0.82 −168.00
250 0.89 −178.40 1.32 35.30 0.03 72.80 0.86 −171.20
300 0.91 178.50 1.00 29.70 0.04 80.50 0.89 −174.20
350 0.93 175.50 0.77 25.50 0.05 83.90 0.91 −177.10
400 0.94 172.60 0.62 22.90 0.06 84.80 0.93 −179.90
450 0.94 169.90 0.50 20.90 0.07 85.30 0.94 177.60
500 0.95 167.20 0.43 20.30 0.08 84.20 0.94 175.10
600 0.95 161.90 0.32 21.60 0.10 82.40 0.95 170.60
700 0.95 156.80 0.26 25.40 0.12 79.90 0.96 166.40
800 0.94 151.90 0.23 31.50 0.14 78.20 0.96 162.30
900 0.94 147.20 0.22 38.60 0.16 74.10 0.94 158.60
1000 0.94 142.10 0.23 48.40 0.15 75.40 0.94 162.10
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast.
Page 13
NXP Semiconductors Product specification
Rev. 04 - 5 January 2007
13 of 15
HF power MOS transistor BLF145
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
D
A
F
D
1
H
43
α
q
U
1
C
B
w
C
M M
2
b
A
c
U
p
2
1
w
2
H
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
9.73
0.18
9.47
0.10
0.385
0.383
0.007
0.004
IEC JEDEC EIAJ
0.373
0.371
D
9.78
9.42
F
1
20.71
2.72
19.93
2.31
0.815
0.107
0.091
0.131
0.785
0.120
REFERENCES
pH
3.33
3.04
Q
4.63
4.11
0.182
0.162
q
18.42
0.725
UNIT
mm
inches
A
7.47
6.37
0.294
0.251
OUTLINE
VERSION
SOT123A
0.229
0.219
MM
M
A
B
1
U
1
2
6.48
24.87
6.22
24.64
0.255
0.245
0.385
0.370
0.980
0.970
U
3
w
U
1
3
9.78
9.39
EUROPEAN
PROJECTION
Q
w
αU
2
0.510.25
45°
0.0200.010
ISSUE DATE
99-03-29
Page 14
NXP Semiconductors
Rev. 04 - 5 January 2007
14 of 15
Legal information
Data sheet status
BLF145
HF power MOS transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and maydiffer in case of multiple devices.The latest product status
information is available on the Internet at URL
[1][2]
Product status
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
http://www.nxp.com/profile/terms, including those pertaining to warranty,
at
intellectual property rights infringement and limitation of liability, unless
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Page 15
NXP Semiconductors
Rev. 04 - 5 January 2007
15 of 15
BLF145
HF power MOS transistor
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF145_N_4 20070105 Product data sheet - BLF145_3
Modifications:
BLF145_3
(9397 750 11581)
BLF145_CNV_2
(9397 750 xxxxx)
• corrections made to note 2 on page 8
• corrections made to note 2 on page 10
20031013 Product specification - BLF145_CNV_2
19971212 Product specification - -
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 5 January 2007
Document identifier: BLF145_N_4
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