Philips BLF145 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLF145
HF power MOS transistor
Product specification
September 1992
Philips Semiconductors Product specification
HF power MOS transistor BLF145
FEATURES
• High power gain
• Low noise figure
• Good thermal stability
• Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123 flange envelope,
with a ceramic cap. All leads are
isolated from the flange. Matched
gate-source voltage (V
) groups are
GS
available on request.
PINNING - SOT123
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
, halfpage
1
23
4
MSB057
g
MBB072
d
s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
= 25 °C in a common source test circuit.
h
f
(MHz)
V
(V)
DS
I
(A)
D
P
(W)
η
L
G
p
(dB)
D
(%)
(note 1)
d
3
(dB)
SSB, class-A 28 28 1.3 8 (PEP) > 24 −<−40
SSB, class-AB 28 28 − 30 (PEP) typ. 20 typ. 40 typ. −35
Note
1. 2-tone efficiency.
September 1992 2
Philips Semiconductors Product specification
HF power MOS transistor BLF145
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
±V
GSS
I
D
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-mb
R
th mb-h
drain-source voltage − 65 V
gate-source voltage − 20 V
DC drain current − 6A
total power dissipation up to Tmb = 25 °C − 68 W
storage temperature −65 150 °C
junction temperature − 200 °C
thermal resistance from junction to mounting base 2.6 K/W
thermal resistance from mounting base to heatsink 0.3 K/W
10
handbook, halfpage
I
D
(A)
10
(1) Current is this area may be limited by R
(2) Tmb=25°C.
(1)
1
−1
110
Fig.2 DC SOAR.
(2)
VDS (V)
DS(on)
.
MRA901
120
MGP035
Th (°C)
100
handbook, halfpage
P
tot
(W)
80
60
40
2
10
20
0
(1) Short-time operation during mismatch.
(2) Continuous operation.
(1)
(2)
40 80 160
Fig.3 Power/temperature derating curves.
September 1992 3
Philips Semiconductors Product specification
HF power MOS transistor BLF145
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
∆V
GS
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage ID = 10 mA; VGS = 0 65 −−V
drain-source leakage current VGS = 0; VDS = 28 V −−2mA
gate-source leakage current ±VGS = 20 V; VDS = 0 −−1 µA
gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V
gate-source voltage difference of
ID = 10 mA; VDS = 10 V −−100 mV
matched devices
forward transconductance ID = 1.5 A; VDS = 10 V 1.2 −− S
drain-source on-state resistance ID = 1.5 A; VGS = 10 V − 0.4 0.75 Ω
on-state drain current VGS = 10 V; VDS = 10 V − 10 − A
input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 125 − pF
output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 75 − pF
feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 7 − pF
handbook, halfpage
4
T.C.
(mV/K)
2
0
−2
−4
−6
10
VDS=10V.
2
10
3
10
ID (mA)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
MGP036
15
MGP037
VGS (V)
12
handbook, halfpage
I
D
(A)
8
4
4
10
0
05
VDS=10V.
Tj = 25 °C
125 °C
10 20
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992 4
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