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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D379
BLF1048
UHF power LDMOS transistor
Preliminary specification
Supersedes data of 1999 July 01
2000 Feb 02
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Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1048
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT502A) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
PINNING - SOT502A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
handbook, halfpage
Top view
1
2
Fig.1 Simplified outline.
3
MBK394
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 960; f2= 960.1 26 90 (PEP) >14 >35 ≤−26
1
V
(V)
DS
P
(W)
L
G
(dB)
p
η
D
(%)
d
im
(dBc)
CW, class-AB (1-tone) 960 26 90 >14 >45 −
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 02 2
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Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1048
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 9A
storage temperature −65 +150 °C
junction temperature − 200 °C
thermal resistance from junction to heatsink Th=25°C; P
= 100 W;
tot
1.15 K/W
note 1
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 1.4 mA 65 −−V
gate-source threshold voltage VDS= 10 V; ID= 140 mA 4 − 5V
drain-source leakage current VGS= 0; VDS=26V −−10 µA
drain cut-off current VGS=V
+9V; VDS=10V 25 −−A
GSth
gate leakage current VGS= ±20 V; VDS=0 −−250 nA
forward transconductance VDS= 10 V; ID=7A − 4 − S
drain-source on-state resistance VGS=V
+9V; ID=7A − 150 − mΩ
GSth
input capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 92 − pF
output capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 74 − pF
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 3 − pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF OPERATION
CW, class-AB (2-tone) f
1
f
(MHz)
= 960; f2= 960.1 26 90 (PEP) >14 >35 ≤−26
=25°C; R
h
V
DS
(V)
= 1.15 K/W, unless otherwise specified.
th j-h
P
(W)
L
G
(dB)
p
η
D
(%)
d
(dBc)
CW, class-AB (1-tone) 960 26 90 >14 >45 −
im
Ruggedness in class-AB operation
The BLF1048is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
= 26 V; f = 960 MHz at rated load power.
DS
2000 Feb 02 3