Philips BLF1046-P, BLF1046 Datasheet
DATA SH EET
Preliminary specification
Supersedes data of 1999 Nov 02
2000 Feb 02
DISCRETE SEMICONDUCTORS
BLF1046
UHF power LDMOS transistor
M3D381
2000 Feb 02 2
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT467C
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
1
3
2
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
CW, class-AB (2-tone) f
1
= 960; f2= 960.1 26 45 (PEP) >14 >35 ≤−28
CW, class-AB (1-tone) 960 26 45 >14 >45 −
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 02 3
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
=25°C; R
th mb-h
= 0.6 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF1046is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 26 V; f = 960 MHz at rated load power.
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
drain-source voltage − 65 V
V
GS
gate-source voltage −±20 V
I
D
drain current (DC) − 4.5 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-h
thermal resistance from junction to heatsink Th=25°C, P
dis
=97W;
note 1
1.2 K/W
R
th mb-h
thermal resistance from mounting base to heatsink 0.6 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage VGS= 0; ID= 0.7 mA 65 −−V
V
GSth
gate-source threshold voltage VDS= 10 V; ID=70mA 4 − 5V
I
DSS
drain-source leakage current VGS= 0; VDS=26V −−1µA
I
DSX
drain cut-off current VGS=V
GSth
+9V; VDS= 10 V 12.5 −−A
I
GSS
gate leakage current VGS= ±20 V; VDS=0 −−125 nA
g
fs
forward transconductance VDS= 10 V; ID= 3.5 A − 2 − S
R
DSon
drain-source on-state resistance VGS=V
GSth
+9V; ID= 3.5 A − 300 − mΩ
C
is
input capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 46 − pF
C
os
output capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 37 − pF
C
rs
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 1.5 − pF
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
CW, class-AB (2-tone) f
1
= 960; f2= 960.1 26 45 (PEP) >14 >35 ≤−28
CW, class-AB (1-tone) 960 26 45 >14 >45 −
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