Philips blf1046 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF1046
UHF power LDMOS transistor
Preliminary specification 2000 Sep 20
Philips Semiconductors Preliminary specification
4
UHF power LDMOS transistor BLF1046
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common source test circuit.
h
PINNING - SOT467C
PIN DESCRIPTION
1drain
2gate
3 source, connected to flange
1
2
Top view
Fig.1 Simplified outline.
3
MBK58
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 960; f2= 960.1 26 45 (PEP) >14 >35 ≤−28
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
CW, class-AB (1-tone) 960 26 45 >14 >46 −
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage − 65 V
gate-source voltage −±20 V
drain current (DC) − 4.5 A
storage temperature −65 +150 °C
junction temperature − 200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Sep 20 2
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
thermal resistance from junction to heatsink Th=25°C, P
=97W;
dis
1.22 K/W
note 1
thermal resistance from mounting base to heatsink 0.65 K/W
drain-source breakdown voltage VGS=0; ID=0.7mA 65 −−V
gate-source threshold voltage VDS=10V; ID=70mA 4 − 5V
drain-source leakage current VGS=0; VDS=26V −−1 µA
drain cut-off current VGS=V
+9V; VDS= 10 V 12.5 −−A
GSth
gate leakage current VGS= ±20 V; VDS=0 −−125 nA
forward transconductance VDS=10V; ID=3.5A − 2 − S
drain-source on-state resistance VGS=V
+9V; ID=3.5A − 300 − mΩ
GSth
input capacitance VGS=0; VDS=26V; f=1MHz − 46 − pF
output capacitance VGS=0; VDS=26V; f=1MHz − 37 − pF
feedback capacitance VGS=0; VDS=26V; f=1MHz − 1.5 − pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
MODE OF
OPERATION
CW, class-AB (2-tone) f
1
f
(MHz)
V
(V)
DS
= 960; f2= 960.1 26 300 45 (PEP) >14 >35 ≤−28
=25°C; R
h
I
(mA)
DQ
= 0.65 K/W, unless otherwise specified.
th mb-h
P
(W)
L
G
(dB)
p
η
(%)
D
d
im
(dBc)
CW, class-AB (1-tone) 960 26 300 45 >14 >46 −
Ruggedness in class-AB operation
The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
= 26 V; f = 960 MHz at rated load power.
DS
Tuning Procedure
For high gain and efficiency:
In CW mode (P
for high gain until G
= 1 W; f = 960 MHz) tune C2 and C16 (see Figs. 13 and 14) until IRL < −15 dB, then adjust C6 and C8
D
>14dB at PL=50W.
P
For linear mode:
Tune for high gain and efficiency mode, then apply two tone signal (f
and tune first C2 and then C6 and C8 for lowest d
(below −28 dBc).
3
= 960 MHz; f2= 960.1 MHz) at PL= 45 W (PEP)
1
2000 Sep 20 3
Philips Semiconductors Preliminary specification
Fig.2 Power gain and drain efficiency as functions
of the load power; typical values.
VDS=26V; IDQ= 330 mA; T
h
≤ 25 °C;
f = 960 MHz; tuned for high efficiency; see tuning procedure.
Fig.4 Power gain and drain efficiency as functions
of peak envelope power; typical values.
VDS=26V; T
h
≤ 25 °C; f
1
=960MHz; f2= 960.1 MHz;
tuned for high linearity; see tuning procedure
y
UHF power LDMOS transistor BLF1046
20
G
P
(dB)
G
P
15
10
5
0
0 102030405060
P
(W)
L
η
D
PAE
80
60
40
20
0
η
(%)
20
D
G
P
(dB)
15
η
G
10
5
0
80
η
D
(%)
D
60
P
40
20
0
0 20406080
P
(W)
L
VDS=26V; IDQ= 330 mA; T
f = 960 MHz; tuned for high linearity; see tuning procedure
≤ 25 °C;
h
Fig.3 Power gain and drain efficiency as functions
of the load power; typical values.
20
G
P
(dB)
IDQ=240mA
400mA300mA
15
10
η
D
5
0
0 1020304050
2000 Sep 20 4
P
(PEP) (W)
L
80
60
40
20
0
η
(%)
0
D
d
3
(dB)
-20
IDQ=240mA
-40
300mA
400mA
-60
-80
0 1020304050
P
(PEP) (W)
L
VDS=26V; T
=960MHz; f2= 960.1 MHz.
f
1
≤ 25 °C;
h
Fig.5 Third order intermodulation distortion as a
function of peak envelope load power;
t
pical values.
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