Philips BLF1043 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D438
BLF1043
UHF power LDMOS transistor
Objective specification
Supersedes data of 2000 Feb 17
2000 Feb 23
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF1043
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,
reducing common mode inductance
• Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
PINNING - SOT538A
PIN DESCRIPTION
1 drain
2 gate
3 source
handbook, halfpage
Top view
1
2
Fig.1 Simplified outline.
3
MBK905
MODE OF OPERATION
CW, class-AB (2-tone) f
f
(MHz)
= 960; f2= 960.1 26 10 (PEP) >16 >35 ≤−30
1
V
(V)
DS
P
(W)
L
G
p
(dB)
η
(%)
D
d
im
(dBc)
CW, class-AB (1-tone) 960 26 10 >16 >45 −
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 23 2
Philips Semiconductors Objective specification
UHF power LDMOS transistor BLF1043
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
drain-source voltage − 75 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
total power dissipation Tmb≤ 25 °C − tbf W
storage temperature −65 +150 °C
junction temperature − 200 °C
thermal resistance from junction to mounting base Tmb=25°C; note 1 4.6 K/W
thermal resistance from mounting base to heatsink 0.4 K/W
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
drain-source breakdown voltage VGS= 0; ID= 0.2 mA 75 −−V
gate-source threshold voltage VDS= 10 V; ID=20mA 4 − 5V
drain-source leakage current VGS= 0; VDS=26V −−0.15 µA
on-state drain current VGS=V
+9V; VDS=10V 3 −−A
GSth
gate leakage current VGS= ±15 V; VDS=0 −−1µA
forward transconductance VDS= 10 V; ID= 0.75 A − 0.5 − S
drain-source on-state resistance VGS= 10 V; ID= 0.75 A − 1.2 −Ω
input capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 11 − pF
output capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 9 − pF
feedback capacitance VGS= 0; VDS= 26 V; f = 1 MHz − 0.6 − pF
2000 Feb 23 3
Loading...