Philips blf1043 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D438

BLF1043

UHF power LDMOS transistor

Product specification
Supersedes data of 2002 November 11

2003 Mar 13

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

FEATURES

• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 85 mA

– Output power = 10 W (PEP)
– Gain = 18.5 dB
– Efficiency = 40%
–dim= −31 dBc

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (HF to 1000 MHz)

• No internal matching for broadband operation

• SMD package.

APPLICATIONS

• RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the 800 to
1000 MHz frequency range

• Broadcast drivers.

PINNING - SOT538A

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

1

2

Top view

Fig.1 Simplified outline.

3

MBK905

DESCRIPTION

10 W LDMOS power transistor for base station
applications at frequencies from HF to 1000 MHz.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

CW, 2-tone, class-AB f

f

(MHz)

= 960; f2= 960.1 26 85 10 (PEP) 18.5 40 ≤−31

1

V

(V)

DS

I

DQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

D

d

(dBc)

CW, 1-tone, class-AB f = 960 26 85 10 18.5 52 −

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

im

2003 Mar 13 2

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DS

V

GS

I

D

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-h

Note

1. Thermal resistance is determined under RF operating conditions. Typical value with device soldered on PC board

with 32 via holes (diameter 0.3 mm) and thermal compound between PCB and heatsink.

drain-source voltage − 65 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
storage temperature −65 +150 °C
junction temperature − 200 °C

thermal resistance from junction to heatsink Tmb=25°C; note 1 9 K/W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

iss

C

oss

C

rss

drain-source breakdown voltage VGS= 0; ID= 0.2 mA 65 −−V
gate-source threshold voltage VDS=10V; ID=20mA 4 − 5V
drain-source leakage current VGS= 0; VDS=26V −−1.5 µA
drain cut-off current VGS=V

+9V; VDS= 10 V 2.8 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS=10V; ID= 0.75 A − 0.5 − S
drain-source on-state resistance VDS=10V; ID= 0.75 A − 1.05 −Ω
input capacitance VGS= 0; VDS=26V; f=1MHz − 11 − pF
output capacitance VGS= 0; VDS=26V; f=1MHz − 9 − pF
feedback capacitance VGS= 0; VDS=26V; f=1MHz − 0.5 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

CW, 2-tone, class-AB f

= 960; f2= 960.1 26 85 10 (PEP) >16.5 >38 ≤−25

1

f

(MHz)

=25°C; R

h

V

DS

(V)

(mA)

= 9 K/W, unless otherwise specified.

th j-h

I

DQ

P

(W)

L

G

p

(dB)

η

(%)

D

d

im

(dBc)

Ruggedness in class-AB operation

The BLF1043is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V

= 26 V; f = 960 MHz at rated load power.

DS

2003 Mar 13 3

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

20

handbook, halfpage

G

p

(dB)

16

12

8

0

Two-tone performance.
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;

= 960 MHz; f2= 960.1 MHz.

f

1

48 1612

G

p

η

D

MDB150

PL (PEP)(W)

Fig.2 Power gain and efficiency as functions of

peak envelope load power; typical values.

7

12

PL (PEP)(W)

MDB151

60

η

D

(%)

40

20

0

handbook, halfpage

0

d

im

(dBC)

−20

d

3

d

−40

−60

−80

048 16

Two-tone performance.
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;

= 960 MHz; f2= 960.1 MHz.

f

1

5

d

Fig.3 Intermodulation distortion as a function of

peak envelope load power; typical values.

22

handbook, halfpage

G

p

(dB)

18

14

10

0

Single-tone performance.
VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C;

f = 960 MHz.

G

p

η

D

42081216

MDB152

PL (W)

Fig.4 Power gain and efficiency as functions of

load power; typical values.

70

η

D

(%)

50

30

10

handbook, halfpage

6

Z

i

(Ω)

2

−2

−6

−10

800 840 1000

VDS= 26 V; IDQ= 85 mA; PL= 10 W; Th≤ 25 °C.
Impedance measured at reference planes; see Fig.7.

r

i

X

i

880 920 960

MDB148

f (MHz)

Fig.5 Inputimpedance as a function of frequency

(series components); typical values.

2003 Mar 13 4

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

12

handbook, halfpage

Z

L

(Ω)

VDS= 26 V; IDQ= 85 mA; Th≤ 25 °C.
Impedance measured at reference planes; see Fig.7.

8

4

0

800

R

L

X

L

840 1000

880 920 960

MDB149

f (MHz)

Fig.6 Inputimpedance as a function of frequency

(series components); typical values.

handbook, halfpage

reference planes

Fig.7 Measuring reference planes: SOT538A.

MGT002

handbook, halfpage

gate

Z

IN

drain

Z

MGS998

L

Fig.8 Definition of transistor impedance.

2003 Mar 13 5

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

handbook, full pagewidth

V

GS

50 Ω
input

V

DS

L9 L10

L8

C11 C12

C7

C5

C8C4 C3

C6

C9 C10

50 Ω output

MDB153

L2 R2

L1

R1

L5

C2

L4

C1

L3

L6

L7

Fig.9 Class-AB test circuit for 960 MHz.

2003 Mar 13 6

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

List of components (see Figs 9 and 10)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C5 Tekelec variable capacitor 0.8 to 8 pF
C2, C3, C6, C7 multilayer ceramic chip capacitor; note 1 56 pF
C4, C10 tantalum SMD capacitor 10 µF; 35 V
C8 multilayerceramic chip capacitor; note 1 1 nF
C9 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C11 multilayerceramic chip capacitor; note 2 1 nF
C12 electrolytic capacitor 100 µF; 63 V 2222 037 58101
L1 3 turns enamelled 0.5 mm copper wire 3 loops; d = 3.5 mm
L2 ferrite bead; ferroxcube CBD4.6/3/3-4S2
L3 stripline; note 3 50 Ω 3.5 × 1.5 mm
L4 stripline; note 3 50 Ω 2 × 1.5 mm
L5 stripline; note 3 42 Ω 5 × 2mm
L6 stripline; note 3 31 Ω 13 × 3mm
L7 stripline; note 3 50 Ω 10 × 1.5 mm
L8 stripline; note 3 65 Ω 5.9 × 1mm
L9 stripline; note 3 50 Ω 2 × 1.5 mm
L10 stripline; note 3 50 Ω 3.5 × 1.5 mm
R1 metal film resistor 39 Ω, 0.6 W
R2 metal film resistor 10 Ω, 0.6 W 2322 256 11009

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 100B or capacitor of same quality.

3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (ε

0.51 mm.

= 2.2); thickness

r

2003 Mar 13 7

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

handbook, full pagewidth

52.3

53.7

V

GS

C4

C10

C3

R1

C2

C1

Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.51 mm.

The other side is unetched and serves as a ground plane.

BLF1043

C12

V

C9
C8
C7

DS

C11

L2

L1

R2

C6

C5

MDB154

Fig.10 Component layout for 960 MHz class-AB test circuit.

2003 Mar 13 8

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

PACKAGE OUTLINE

Ceramic surface mounted package; 2 leads SOT538A

D

A

3

D

1

D

2

1

z1 (4×)

H

2

b

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

A

2.95

2.29

0.116

0.090

1.35

1.19

0.053

0.047

0.23

0.18

0.009

0.007

5.16

5.00

0.203

0.197

D

4.65

4.50

0.183

0.177

D

1

5.16

5.00

0.203

0.197

UNIT cbD

inches

w

M M

1

0 2.5 5 mm

E

2

4.14

3.99

0.163

0.157

B

E

1

3.63

3.48

0.143

0.137

z4 (4×)z2 (4×)

B

scale

E

2

4.14

3.99

0.163

0.157

HLQ α

7.49

7.24

0.295

0.285

2.03

1.27

0.080

0.050

A

E2E

0.10

0.00

0.004

0.000

1

z3 (4×)

L

w

1

0.25

0.010

c

0.023

0.017

α

Q

z

1

0.58

0.43

z

2

0.25

0.18

0.010

0.007

z

3

0.97

0.81

0.038

0.032

E

z

4

0.51

0.00

0.020

0.000

7°
0°

7°
0°

OUTLINE

VERSION

SOT538A

IEC JEDEC JEITA

REFERENCES

2003 Mar 13 9

EUROPEAN

PROJECTION

ISSUE DATE

00-03-03
02-08-20

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

DATA SHEET STATUS

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

I Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Mar 13 10

Philips Semiconductors Product specification

UHF power LDMOS transistor BLF1043

NOTES

2003 Mar 13 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613524/07/pp12 Date of release: 2003 Mar 13 Document order number: 9397 750 10913

SCA75