Philips BLF0810-90, BLF0810S-90 Technical data

M3D379

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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D461

BLF0810-90; BLF0810S-90

Base station LDMOS transistors

Preliminary specification 2002 Mar 18

Philips Semiconductors Preliminary specification

handbook, halfpage

Top view MBK394

1

2

3

Fig.1 Simplified outline SOT502A (BLF0810-90)

5

Base station LDMOS transistors BLF0810-90; BLF0810S-90

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead flange package
(BLF0810-90) with a ceramic cap or in a 2-lead earless
package (BLF0810S-90). The common source is
connected to the flange.

common mode inductance

• Designed for broadband operation (750 MHz to 1 GHz).

Typical CDMA IS95 performance at standard settings at a
supply voltage of 27 V and I

APPLICATIONS

• Common source class-AB operation in CDMA
applications in the 750 to 960 MHz frequency range.

P

=18W

L

G

=16dB

P

η =26%
ACPR <−45 dBc at 750 kHz and BW = 30 kHz
ACPR <−63 dBc at 1.98 MHz and BW = 30 kHz

PINNING - SOT502A PINNING - SOT502B

PIN DESCRIPTION

1drain

2 gate

3 source; connected to flange

PIN DESCRIPTION

1drain

2

3 source; connected to flange

gate

=500mA

DQ

1

3

2

Top view

MBL10

Fig.2 Simplified outline SOT502B (BLF0810S-90)

QUICK REFERENCE DATA

2-tone performance at T

MODE OF OPERATION

=25°C in a common source test circuit.

h

f

(MHz)

V

(V)

DS

P

PEP

L

(W)

G

(dB)

p

η

D

(%)

d

3

(dBc)

Class-AB 881.4 - 881.6 27 60 typ. 16.5 typ. 35 typ. −30

MODE OF OPERATION

(1)

CDMA

f

(MHz)

881.5 27 18 typ. 16 typ. 26

V

(V)

DS

P

avg

L

(W)

G

(dB)

p

η

D

(%)

ACPR

(dB)

typ. −46
typ. −63

Note

1. IS95 CDMA (pilot, Paging, Sync, and Trafic Codes 8 trough 13)

2. ACPR 750 kHz at BW = 30 kHz

3. ACPR 1.98 MHz at BW = 30 kHz.

(2)

(3)

2002 Mar 18 2

Philips Semiconductors Preliminary specification

Base station LDMOS transistors BLF0810-90; BLF0810S-90

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-c

Note

1. Thermal resistance is determined under RF operating conditions.

drain-source voltage − 75 V

gate-source voltage −±15 V

storage temperature −65 150 °C

junction temperature − 200 °C

thermal resistance from junction to case Th=25°C, PL= 18 W avg, note 1 <0.75 K/W

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

drain-source breakdown voltage VGS=0; ID=3mA 75 −−V

gate-source threshold voltage VDS=10V; ID= 300 mA 4 − 5V

drain-source leakage current VGS=0; VDS=36V −−1 µA

on-state drain current VGS=V

+9V; VDS=10V 28 −−A

GS(th)

gate leakage current VGS= ±20 V; VDS=0 −−1 µA

forward transconductance VDS=10V; ID=10A − 4.8 − S

drain-source on-state resistance VGS=9V; ID=10A − 120 − mΩ

2002 Mar 18 3

Philips Semiconductors Preliminary specification

Fig.3 Power gain and efficiency as functions of

peak envelope load power, typical values.

VDS=27V; IDQ= 500 mA; f1=881.4MHz; f2=881.6MHz.

Base station LDMOS transistors BLF0810-90; BLF0810S-90

APPLICATION INFORMATION

RF performance in a common source-AB circuit; T

=25°C.

h

MODE OF OPERATION

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

PEP

L

(W)

G

(dB)

p

η

D

(%)

d

3

(dBc)

Class-AB 881.4 - 881.6 27 500 60 >16 >35 <−30

MODE OF OPERATION

(1)

CDMA

f

(MHz)

V

(V)

DS

I

DQ

(mA)

P

avg

L

(W)

881.5 27 500 >16 >15 >26

G

(dB)

p

η

D

(%)

ACPR

(dB)

<−46

<−63

Note

1. IS95 CDMA (pilot, Paging, Sync, and Trafic Codes 8 trough 13)

2. ACPR 750 kHz at BW = 30 kHz

3. ACPR 1.98 MHz at BW = 30 kHz.

Ruggedness in class-AB operation

The BLF0810-90 and BLF0810S-90 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases at V

=27V; PL= 60 W (PEP).

DS

(2)

(3)

20

G

P

(dB)

16

12

8

4

0

0 20406080100

G

P

η

D

2002 Mar 18 4

(PEP) (W)

P

L

50

40

30

20

10

0

η

(%)

0

d

D

3

(dBc)

-20

IDQ=400mA

-40

450mA

500mA

-60

-80
0 20406080100

VDS=27V; f1= 881.4 MHz; f2=881.6MHz.

600mA

P

(PEP) (W)

L

Fig.4 Intermodulation distortion as a function of

peak envelope load power, typical values.