Philips BLF0810-90, BLF0810S-90 Technical data
BLF0810-90
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-90; BLF0810S-90
Base station LDMOS transistors
Preliminary specification |
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2002 Mar 18 |
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Philips Semiconductors |
Preliminary specification |
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Base station LDMOS transistors |
BLF0810-90; BLF0810S-90 |
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FEATURES
•High power gain
•Easy power control
•Excellent ruggedness
•Source on underside eliminates DC isolators, reducing common mode inductance
•Designed for broadband operation (750 MHz to 1 GHz).
APPLICATIONS
•Common source class-AB operation in CDMA applications in the 750 to 960 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead flange package (BLF0810-90) with a ceramic cap or in a 2-lead earless package (BLF0810S-90). The common source is connected to the flange.
Typical CDMA IS95 performance at standard settings at a supply voltage of 27 V and IDQ = 500 mA
PL = 18 W GP = 16 dB η = 26 %
ACPR <−45 dBc at 750 kHz and BW = 30 kHz ACPR <−63 dBc at 1.98 MHz and BW = 30 kHz
PINNING - SOT502A
PIN |
DESCRIPTION |
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1 |
drain |
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2 |
gate |
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3 |
source; connected to flange |
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PINNING - SOT502B
PIN |
DESCRIPTION |
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1 |
drain |
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2 |
gate |
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3 |
source; connected to flange |
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handbook, halfpage |
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Top view |
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MBK394 |
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Top view |
MBL105 |
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Fig.1 Simplified outline SOT502A (BLF0810-90) |
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Fig.2 Simplified outline SOT502B (BLF0810S-90) |
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QUICK REFERENCE DATA |
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2-tone performance at Th = 25 °C in a common source test circuit. |
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MODE OF OPERATION |
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f |
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VDS |
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PL PEP |
Gp |
ηD |
d3 |
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(MHz) |
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(V) |
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(W) |
(dB) |
(%) |
(dBc) |
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Class-AB |
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881.4 - 881.6 |
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27 |
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60 |
typ. 16.5 |
typ. 35 |
typ. −30 |
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MODE OF OPERATION |
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f |
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VDS |
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PL avg |
Gp |
ηD |
ACPR |
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(MHz) |
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(V) |
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(W) |
(dB) |
(%) |
(dB) |
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CDMA(1) |
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881.5 |
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27 |
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18 |
typ. 16 |
typ. 26 |
typ. −46 (2) |
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typ. −63 (3) |
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Note |
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1.IS95 CDMA (pilot, Paging, Sync, and Trafic Codes 8 trough 13)
2.ACPR 750 kHz at BW = 30 kHz
3.ACPR 1.98 MHz at BW = 30 kHz.
2002 Mar 18 |
2 |
Philips Semiconductors |
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Preliminary specification |
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Base station LDMOS transistors |
BLF0810-90; BLF0810S-90 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 60134). |
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SYMBOL |
PARAMETER |
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CONDITIONS |
MIN. |
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MAX. |
UNIT |
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VDS |
drain-source voltage |
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− |
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75 |
V |
VGS |
gate-source voltage |
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− |
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±15 |
V |
Tstg |
storage temperature |
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−65 |
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150 |
°C |
Tj |
junction temperature |
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− |
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200 |
°C |
THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
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VALUE |
UNIT |
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Rth j-c |
thermal resistance from junction to case |
Th = 25 °C, PL = 18 W avg, note 1 |
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<0.75 |
K/W |
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Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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V(BR)DSS |
drain-source breakdown voltage |
VGS = 0; ID = 3 mA |
75 |
− |
− |
V |
VGSth |
gate-source threshold voltage |
VDS = 10 V; ID = 300 mA |
4 |
− |
5 |
V |
IDSS |
drain-source leakage current |
VGS = 0; VDS = 36 V |
− |
− |
1 |
µA |
IDSX |
on-state drain current |
VGS = VGS(th) + 9 V; VDS = 10 V |
28 |
− |
− |
A |
IGSS |
gate leakage current |
VGS = ±20 V; VDS = 0 |
− |
− |
1 |
µA |
gfs |
forward transconductance |
VDS = 10 V; ID = 10 A |
− |
4.8 |
− |
S |
RDSon |
drain-source on-state resistance |
VGS = 9 V; ID = 10 A |
− |
120 |
− |
mΩ |
2002 Mar 18 |
3 |
Philips Semiconductors |
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Preliminary specification |
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|
|
Base station LDMOS transistors |
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BLF0810-90; BLF0810S-90 |
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APPLICATION INFORMATION |
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RF performance in a common source-AB circuit; Th = 25 °C. |
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MODE OF OPERATION |
f |
VDS |
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IDQ |
PL PEP |
Gp |
ηD |
d3 |
(MHz) |
(V) |
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(mA) |
(W) |
(dB) |
(%) |
(dBc) |
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Class-AB |
881.4 - 881.6 |
27 |
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500 |
60 |
>16 |
>35 |
<−30 |
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MODE OF OPERATION |
f |
VDS |
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IDQ |
PL avg |
Gp |
ηD |
ACPR |
(MHz) |
(V) |
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(mA) |
(W) |
(dB) |
(%) |
(dB) |
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CDMA(1) |
881.5 |
27 |
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500 |
>16 |
>15 |
>26 |
<−46 (2) |
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<−63 (3) |
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Note |
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1.IS95 CDMA (pilot, Paging, Sync, and Trafic Codes 8 trough 13)
2.ACPR 750 kHz at BW = 30 kHz
3.ACPR 1.98 MHz at BW = 30 kHz.
Ruggedness in class-AB operation
The BLF0810-90 and BLF0810S-90 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at VDS = 27 V; PL = 60 W (PEP).
20 |
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50 |
GP |
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GP |
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ηD |
(dB) |
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(%) |
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16 |
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40 |
12 |
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30 |
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ηD |
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8 |
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20 |
4 |
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10 |
0 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
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PL (PEP) (W) |
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VDS = 27 V; IDQ = 500 mA; f1 = 881.4 MHz; f2 = 881.6 MHz.
Fig.3 Power gain and efficiency as functions of peak envelope load power, typical values.
0 |
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d3 |
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(dBc) |
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-20 |
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IDQ=400mA |
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-40 |
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450mA |
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500mA |
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-60 |
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600mA |
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-80 |
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0 |
20 |
40 |
60 |
80 |
100 |
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PL (PEP) (W) |
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VDS = 27 V; f1 = 881.4 MHz; f2 = 881.6 MHz.
Fig.4 Intermodulation distortion as a function of peak envelope load power, typical values.
2002 Mar 18 |
4 |
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