Philips bla1011-300 Datasheet

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BLA1011-300

Avionics LDMOS transistors

Rev. 02 — 5 February 2008 Product data sheet

1. Product proﬁle

1.1 General description

300 W LDMOS pulsedpowertransistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz.

Table 1. Typical performance

RF performance at T

=2%.

Mode of operation f I

Pulsed class-AB 1030 to 1090 150 32 300 16.5 57

CAUTION

= 25°C in a common source class-AB production test circuit; tp=50µs;

case

(MHz) (mA) (V) (W) (dB) (%)

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

n Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply

voltage of 32 V, an IDq of 150 mA, a tp of 50 µs and a δ of 2 %:

u Output power = 300 W u Power gain = 16.5 dB (typ)

u Efﬁciency = 57 % (typ) n Easy power control n Excellent ruggedness n High efﬁciency n Excellent thermal stability n Designed for operation in 1030 MHz to 1090 MHz band n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n RF power ampliﬁers for Avionics applications in the 1030 MHz to 1090 MHz frequency

band

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NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simpliﬁed outline Symbol

1 drain 2 gate 3 source

[1] Connected to ﬂange

3. Ordering information

Table 3. Ordering information

Type number Package

BLA1011-300 - ﬂanged LDMOST ceramic package; 2 mounting

BLA1011-300

Avionics LDMOS transistors

[1]

Name Description Version

holes; 2 leads

sym112

SOT957A

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

stg

drain-source voltage - 65 V gate-source voltage −0.5 +15 V drain current - 15 A storage temperature −65 +150 °C junction temperature - 200 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Max Unit

th(j-h)

transient thermal impedance from junction to heatsink

= 25 °C; tp=50µs;

case

δ = 2 %; P

= 300 W

0.1 0.15 K/W

Product data sheet Rev. 02 — 5 February 2008 2 of 11

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NXP Semiconductors

6. Characteristics

Table 6. Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

(BR)DSS

GS(th)

GSq

DSS

DSX

GSS

DS(on)

BLA1011-300

Avionics LDMOS transistors

drain-source breakdown voltage

gate-source threshold voltage

gate-source quiescent voltage

drain leakage current VGS=0V; VDS=32V - - 3.3 µA drain cut-off current VGS=V gate leakage current VGS=13V; VDS=0V - - 60 nA forward

transconductance drain-source on-state

resistance

VGS=0V; ID= 3.75 mA 65 - - V

VDS= 20 V; ID= 375 mA 5.2 5.6 6.2 V

VDS= 32 V; ID= 150 mA - 5.48 - V

+ 6 V; VDS= 10 V 50 63 73 A

GS(th)

VDS=20V; ID=24A - 15 - S

VGS=V

+ 6 V; ID=13.5 A - 55 80 mΩ

GS(th)

7. Application information

Table 7. Application information

Mode of operation: Pulsed RF; tp=50µs;δ= 2 %; VDS=32V;IDq= 150 mA; T otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

droop(pulse)

output power 300 - - W power gain PL= 300 W 15 16.5 - dB input return loss PL= 300 W - 10 - dB drain efﬁciency PL= 300 W 52 57 - % rise time PL= 300 W - 30 50 ns fall time PL= 300 W - 5 50 ns pulse droop power PL= 300 W - 0 0.2 dB

=25°C; unless

case

Product data sheet Rev. 02 — 5 February 2008 3 of 11

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NXP Semiconductors

Table 8. Typical impedance

f Z MHz Ω Ω

1030 4.25 − j3.57 1.27 − j0.33 1060 4.24 − j3.56 1.04 − j0.41 1090 4.47 − j3.71 0.91 − j0.60

Fig 1. Deﬁnition of transistor impedance

7.1 Ruggedness in class-AB operation

BLA1011-300

Avionics LDMOS transistors

drain

gate

001aag189

The BLA1011-300 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS=32V; IDq= 150 mA; PL= 300 W; f = 1030 MHz to 1090 MHz.

(%)

(1)

0 400300100 200

(2) (3)

(1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz

BLA1011-300 in a wideband circuit; VDS=32V; IDq= 150 mA; tp=50µs; δ = 2 %.

Fig 2. Drain efﬁciency as functions of load power;

typical values

001aag190

PL (W)

(dB)

0 400300100 200

(2) (3) (1)

001aag191

PL (W)

(1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz

BLA1011-300 in a wideband circuit; VDS=32V; IDq= 150 mA; tp=50µs; δ = 2 %.

Fig 3. Power gain as a function of load power; typical

values

Product data sheet Rev. 02 — 5 February 2008 4 of 11

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NXP Semiconductors

BLA1011-300

Avionics LDMOS transistors

(3) (1) (2)

001aag192

Pi (W)

(W)

400

300

200

100

0108462

(1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz

BLA1011-300 in a wideband circuit; VDS=32V; IDq= 150 mA; tp=50µs; δ = 2 %.

Fig 4. Load power as a function of input power;

typical values

(dB)

1020 110010801040 1060

001aag193

f (MHz)

(%)

VDS=32V; IDq= 150 mA; tp=50µs; δ = 2 %.

Fig 5. Power gain and drain efﬁciency as functions of

frequency; typical values

Product data sheet Rev. 02 — 5 February 2008 5 of 11

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NXP Semiconductors

8. Test information

C10

BLA1011-300

Avionics LDMOS transistors

C12

C11

T3 T4

T6 T7 T8

001aah710

Printed-Circuit Board (PCB): Rogers Duroid 6006; εr = 6.2 F/m; height = 0.64 mm. See Table 9 for list of components.

Fig 6. Component layout for common source class-AB pulsed production test circuit

Table 9. List of components (see

Figure 6)

To ensure good power supply of the device,adding an electrolytic capacitor close to the supply connection of the circuit may be required. The actual capacitor value may differ depending on the pulse format, the quality of the power supply and the length of the connecting wires to the power supply.In

general a value of 470

F will be sufﬁcient.

Component Description Value Remarks

C1, C4 multilayer ceramic chip capacitor 62 pF C2, C3 multilayer ceramic chip capacitor 1.5 pF C5 multilayer ceramic chip capacitor 100 pF C6, C8 multilayer ceramic chip capacitor 62 pF C7 multilayer ceramic chip capacitor 10 pF C9 multilayer ceramic chip capacitor 1.2 nF

[1] [2] [2] [2] [2] [1]

C10 electrolytic capacitor 47 µF; 20 V C11 electrolytic capacitor 47 µF; 63 V C12 multilayer ceramic chip capacitor 47 pF

[1]

L1 Ω-shaped enameled copper wire d = 1 mm;

length = 38 mm

R1 SMD resistor 18 Ω 0508 package

Product data sheet Rev. 02 — 5 February 2008 6 of 11

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NXP Semiconductors

BLA1011-300

Avionics LDMOS transistors

Table 9. List of components (see

general a value of 470

Component Description Value Remarks

R2 metal ﬁlm resistor 49.9 Ω T1 stripline - (W × L) 5 mm × 9mm T2 stripline - (W × L) 1.25 mm × 7.5 mm T3 stripline - (W × L) 15 mm × 11 mm T4 stripline - (W × L) 40 mm × 16.8 mm T5 stripline - (W × L) 1 mm × 6.25 mm T6 stripline - (W × L) 4.95 mm × 3.55 mm T7 stripline - (W × L) 9.4 mm × 3mm T8 stripline - (W × L) 12 mm × 2.45 mm

[1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality.

F will be sufﬁcient.

Figure 6)

…continued

Product data sheet Rev. 02 — 5 February 2008 7 of 11

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NXP Semiconductors

9. Package outline

BLA1011-300

Avionics LDMOS transistors

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

B C

MAMBM

SOT957A

DIMENSIONS (mm are the original dimensions)

UNIT A

inches

0.1605

OUTLINE VERSION

SOT957A

4.67

4.08

0.184

12.83

12.57

0.505

0.495

c D

0.15

0.10

0.006

0.004

IEC JEDEC JEITA

22.07

21.62

0.869

0.851

22.04

21.64

0.868

0.852

E E

9.53

9.27

0.375

0.365

REFERENCES

0 5 10 mm

F H

9.55

1.14

9.25

0.89

0.376

0.045

0.364

0.035

MCM

scale

19.94

18.92

0.785

0.745

L P Q

5.33

3.38

4.31

3.12

0.210

0.133

0.170

0.123

q U

1.70

27.94 0.25

1.45

0.067

1.100 0.01

0.057

EUROPEAN

PROJECTION

34.16

33.91

1.345

1.335

9.91

9.65

0.390

0.380

0.25

0.01

ISSUE DATE

06-06-29 07-03-01

Fig 7. Package outline SOT957A

Product data sheet Rev. 02 — 5 February 2008 8 of 11

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NXP Semiconductors

BLA1011-300

Avionics LDMOS transistors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

IFF Identiﬁcation Friend or Foe LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency TCAS Trafﬁc Collision Avoidance System VSWR Voltage Standing-Wave Ratio

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLA1011-300_2 20080205 Product data sheet - BLA1011-300_1 Modiﬁcations:

BLA1011-300_1 20070403 Product data sheet - -

• Section 1.2 “Features” on page 1: added RoHS compliance statement

• Added Section 8 “Test information” on page 6.

Product data sheet Rev. 02 — 5 February 2008 9 of 11

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NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLA1011-300

Avionics LDMOS transistors

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product statusof device(s) described in this document mayhave changed since this document waspublished and maydiffer in caseof multiple devices.The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information includedhereinand shall have noliabilityfor the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the sameproduct type number(s) and title.Ashort data sheetisintended for quickreferenceonly and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not giveany representations or warranties, expressedor implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replacesallinformationsupplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Deﬁnition

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute Maximum RatingsSystemofIEC 60134) maycause permanent damage to the device.Limiting values are stress ratingsonlyand operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.4 Trademarks

Notice: Allreferencedbrands, product names,service namesandtrademarks are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 02 — 5 February 2008 10 of 11

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NXP Semiconductors

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Contact information. . . . . . . . . . . . . . . . . . . . . 10

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

BLA1011-300

Avionics LDMOS transistors

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 5 February 2008

Document identifier: BLA1011-300_2