Philips BLA1011-200 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SHEET

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M3D379

BLA1011-200

Avionics LDMOS transistor

Preliminary specification 2000 Aug 02

Philips Semiconductors Preliminary specification

Avionics LDMOS transistor BLA1011-200

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on mounting base eliminates DC isolators,

reducing common mode inductance

APPLICATIONS

• Avionics transmitter applications in the
1030 to 1090 MHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flang package
(SOT502A) with a ceramic cap. The common source is
connected to the flange.

PINNING - SOT502A

PIN DESCRIPTION

1drain
2gate
3 source, connected to flange

ok, halfpage

Top view

1

2

Fig.1 Simplified outline.

3

MBK394

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

Pulsed class-AB;

=50µs; δ =2%

t

p

=25°C in a common source test circuit.

h

f

(MHz)

1030 - 1090 36 200 >13 >45

V

(V)

DS

P

(W)

L

G

p

(dB)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 75 V
gate-source voltage −±20 V
drain current (DC) − tbd A
total power dissipation Th≤ 25 °C − 700 W
storage temperature −65 150 °C
junction temperature − 200 °C

η

(%)

D

2000 Aug 02 2