Philips bla1011-2 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D438

BLA1011-2

Avionics LDMOS transistor

Product specification
Supersedes data of 2002 Oct 02

2003 Nov 19

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-2

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on mounting base eliminates DC isolators,

reducing common mode inductance.

APPLICATIONS

• Avionics applications in the 1030 to 1090 MHz
frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

Pulsed class-AB;
t

=50µs; δ =2%

p

f

(MHz)

1030 to 1090 36 2 >16

PINNING - SOT538A

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to mounting base

1

2

Top view

Fig.1 Simplified outline (SOT538A).

V

(V)

DS

P

(W)

L

3

MBK905

G

p

(dB)

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

BLA1011-2 − ceramic surface mounted package; 2 leads SOT538A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 75 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
total power dissipation Th≤ 25 °C − 10 W
storage temperature −65 +150 °C
junction temperature − 200 °C

2003 Nov 19 2

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-2

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th(j-mb)

R

th(mb-h)

Notes

1. Thermal impedance is determined under RF operating conditions with pulsed bias and Th=25°C.

2. Typical value for mounting on PCB with 32 0.4 mm thermal vias with 20 µm tin plating and thermal compound

between PCB and heatsink.

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

C

is

C

os

C

rs

thermal impedance from junction to mounting base note 1 1 K/W
thermal resistance from mounting base to heatsink note 2 6.5 K/W

drain-source breakdown voltage VGS= 0; ID= 0.2 mA 75 −−V
gate-source threshold voltage VDS=10V; ID=20mA 2 − 5V
drain-source leakage current VGS= 0; VDS=26V −−0.1 mA
on-state drain current VGS=V

+9V; VDS= 10 V 2.8 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS=10V; ID= 0.75 A − 0.5 − S
drain-source on-state resistance VGS= 10 V; ID= 0.75 A − 1.2 −Ω
input capacitance VGS=0V; VDS= 26 V; f = 1 MHz − 11 − pF
output capacitance VGS=0V; VDS= 26 V; f = 1 MHz − 9 − pF
feedback capacitance VGS=0V; VDS= 26 V; f = 1 MHz − 0.5 − pF

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF

OPERATION

Pulsed class-AB;
t

=50µs; δ =2%

p

f

(MHz)

V

(V)

DS

1030 to 1090 36 50 2 >16 <15 <15 <0.5

I

DQ

(mA)

=25°C; R

h

(W)

P

L

= 6.5 K/W unless otherwise specified.

th mb-h

G

(dB)

p

t

r

(ns)

t

f

(ns)

PULSE DROOP

(dB)

Ruggedness in class-AB operation

The BLA1011-2is capable ofwithstanding a loadmismatch corresponding toVSWR = 5 : 1 through all phases underthe
operating conditions.

Typical impedance values

FREQUENCY

(MHz)

Z

(Ω)

S

Z

L

(Ω)

1030 1.51 + j 11.76 6.9 + j 5
1060 1.51 + j 11.26 6.7+j5.9
1090 1.52 + j 10.77 5.1+j6.6

2003 Nov 19 3

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-2

MGU484

(1)
(2)
(3)

P

(W)

3

L

handbook, halfpage

2

1

0

0

10 5020 30

40

PD (mW)

Th=25°C; VDS= 36 V; IDQ= 50 mA; class-AB;

=50µs; δ = 2%.

t

p

(1) f = 1060 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.

Fig.2 Load power as a function of drive power;

typical values.

20

handbook, halfpage

G

p

(dB)

16

(1)
(2)

MGU483

(3)

12

8

4

0

01

2

PL (W)

Th=25°C; VDS= 36 V; IDQ= 50 mA; class-AB;

=50µs; δ = 2%.

t

p

(1) f = 1060 MHz.
(2) f = 1030 MHz.
(3) f = 1090 MHz.

Fig.3 Power gain as a function of load power;

typical values.

3

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0
1000 1040

1080

f (MHz)

Th=25°C; VDS= 36 V; IDQ= 50 mA; class-AB;

=50µs; δ = 2%.

t

p

(1) P

=1W.

L

(2) PL=2W.

(3) PL=3W.
(4) PL=4W.

Fig.4 Power gain as a function of frequency;

typical values.

MGU485

(1)
(2)
(3)
(4)

1120

2.5

handbook, halfpage

P

L

(W)

MGU486

2

1.5

1

0.5

0

05

123

4

V

GS

Th=25°C; VDS= 36 V; IDQ= 50 mA; class-AB;
f = 1090 MHz; t

=50µs; δ = 2%.

p

Fig.5 Load power as a function of gate-source

voltage; typical values.

(V)

2003 Nov 19 4

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-2

handbook, full pagewidth

C3

C1

Dimensions in mm.
Thecomponents are situated on one side of the Rogers 6006 printed-circuit board (thickness = 0.64 mm;εr= 6.2), the other side is unetched

and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.

C2

110

C4
C5

R2

R1

5

7.5 13.5

7

C6

C7

C11

C10

C8 C9

41

MGU487

60

Fig.6 Printed-circuit board for class-AB test circuit.

List of components for class-AB test circuit (see Fig.6)

COMPONENT DESCRIPTION VALUE

C1, C8 multilayer ceramic chip capacitor; note 1 56 pF
C2 multilayer ceramic chip capacitor; note 1 7.5 pF
C3 multilayer ceramic chip capacitor; note 1 1.8 pF
C4, C10 multilayer ceramic chip capacitor; note 2 20 nF
C5 multilayer ceramic chip capacitor; note 3 33 pF
C6 multilayer ceramic chip capacitor; note 1 5.6 pF
C7 multilayer ceramic chip capacitor; note 3 6.2 pF
C9 tekelec trimmer; type 37283 0.4 to 2.5 pF
C11 multilayer ceramic chip capacitor; note 1 33 pF
R1 SMD resistor 2.2 Ω (2 in parallel)
R2 SMD resistor 22 Ω

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 200B or capacitor of same quality.

3. American Technical Ceramics type 100B or capacitor of same quality.

2003 Nov 19 5

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-2

PACKAGE OUTLINE

Ceramic surface mounted package; 2 leads SOT538A

D

A

3

D

1

D

2

1

z1 (4×)

H

2

b

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

A

2.95

2.29

0.116

0.090

1.35

1.19

0.053

0.047

0.23

0.18

0.009

0.007

5.16

5.00

0.203

0.197

D1D

4.65

4.50

0.183

0.177

5.16

5.00

0.203

0.197

UNIT cbD

inches

w

M M

1

0 2.5 5 mm

E

2

4.14

3.99

0.163

0.157

B

E

1

3.63

3.48

0.143

0.137

z4 (4×)z2 (4×)

B

scale

E

2

4.14

3.99

0.163

0.157

HLQ α

7.49

7.24

0.295

0.285

2.03

1.27

0.080

0.050

A

E2E

0.10

0.00

0.004

0.000

1

z3 (4×)

L

w

1

0.25

0.010

c

0.023

0.017

α

Q

z

1

0.58

0.43

z

2

0.25

0.18

0.010

0.007

z

3

0.97

0.81

0.038

0.032

E

z

4

0.51

0.00

0.020

0.000

7°
0°

7°
0°

OUTLINE
VERSION

SOT538A

IEC JEDEC JEITA

REFERENCES

2003 Nov 19 6

EUROPEAN

PROJECTION

ISSUE DATE

00-03-03
02-08-20

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-2

DATA SHEET STATUS

LEVEL

DATASHEET

STATUS

I Objective

data

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary

data

Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips Semiconductors
reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order to
improve the design, manufacturing and supply. Relevant changes will be
communicated via a Customer Product/Process Change Notification (CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For datasheets describingmultiple type numbers, the highest-levelproduct statusdetermines the datasheet status.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition Limiting values givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese oratany otherconditions above thosegiven inthe
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarranty thatsuchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers usingor sellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When theproduct isin fullproduction
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Nov 19 7

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-2

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Nov 19 8

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotationor contract, is believed to be accurate and reliableand may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R77/05/pp9 Date of release: 2003 Nov 19 Document order number: 9397 750 12245

SCA75