Philips bla1011-10 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D381

BLA1011-10

Avionics LDMOS transistor

Product specification
Supersedes data of 2002 Oct 02

2003 Nov 19

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-10

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on mounting base eliminates DC isolators,

reducing common mode inductance.

APPLICATIONS

• Avionics transmitter applications in the
1030 to 1090 MHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.

QUICK REFERENCE DATA

RF performance at Th=25°C in a common source test circuit.

MODE OF OPERATION

Pulsed class-AB;
t

=50µs; δ =2%

p

f

(MHz)

1030 to 1090 36 10 >15 >40

V

(V)

DS

PINNING - SOT467C

PIN DESCRIPTION

1 drain
2 gate
3 source, connected to flange

1

2

Top view

Fig.1 Simplified outline (SOT467C).

P

L

(W)

G

(dB)

MBK584

p

3

η

D

(%)

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

BLA1011-10 − flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 75 V
gate-source voltage −±15 V
drain current (DC) − 2.2 A
total power dissipation Th≤ 25 °C − 25 W
storage temperature −65 +150 °C
junction temperature − 200 °C

2003 Nov 19 2

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-10

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th(j-mb)

R

th(mb-h)

Notes

1. Thermal impedance is determined under RF operating conditions with pulsed bias.

2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque.

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

thermal impedance from junction to mounting base Tmb=25°C; note 1 1.2 K/W
thermal resistance from mounting base to heatsink note 2 0.55 K/W

drain-source breakdown voltage VGS= 0; ID= 0.7 mA 75 −−V
gate-source threshold voltage VDS=10V; ID=20mA 4 − 5V
drain-source leakage current VGS= 0; VDS=28V −−0.1 mA
on-state drain current VGS=V

+9V; VDS= 10 V 2.8 −−A

GSth

gate leakage current VGS= ±15 V; VDS=0 −−40 nA
forward transconductance VDS=10V; ID= 0.75 A − 0.5 − S
drain-source on-state resistance VGS= 10 V; ID= 0.75 A − 1.2 −Ω

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF

OPERATION

Pulsed class-AB;

=50µs; δ =2%

t

p

f

(MHz)

V

(V)

DS

1030 to 1090 36 50 10 >15 >40 <20 <20 <0.5

I

DQ

(mA)

=25°C; R

h

P

L

(W)

G

(dB)

= 0.55 K/W unless otherwise specified.

th mb-h

p

η

D

(%)

t

r

(ns)

t

f

(ns)

PULSE DROOP

(dB)

Ruggedness in class-AB operation

The BLA1011-10 is capable of withstanding a load mismatch corresponding to VSWR =5:1 through all phases under
the operating conditions.

Typical impedance values

FREQUENCY

(MHz)

Z

(Ω)

S

Z

L

(Ω)

1030 1 + j 10.6 4.3 + j 7
1060 1.3 + j 6.99 5.99 + j 13.98
1090 1.42+j7 7+j11.58

2003 Nov 19 3

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-10

15

handbook, halfpage

P

L

(W)

10

(1)

(2)

5

0

0 50 150

Th=25°C; VDS= 36V; IDQ= 50mA; class-AB;

=50µs; δ = 2%.

t

p

(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.

(3)

100

MGU494

PD (mW)

Fig.2 Load power as a function of drive power;

typical values.

24

handbook, halfpage

G

p

(dB)

20

16

(1)

12

8

4

0

05

Th=25°C; VDS= 36 V; IDQ= 50 mA; class-AB;

=50µs; δ = 2%.

t

p

(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.

(2)

(3)

10

η

G

PL (W)

MGU493

D

p

Fig.3 Power gain and efficiency as functions of

load power; typical values.

60

η

D

(%)

50

40

30

20

10

0

15

24

handbook, halfpage

G

p

(dB)

20

16

12

8

4

0
1000 1040 1080

Th=25°C; VDS= 36 V; IDQ= 50 mA; class-AB;

= 10 W; tp=50µs; δ = 2%.

P

L

f (MHz)

Fig.4 Power gain as a function of frequency;

typical values.

MGU495

1120

12

handbook, halfpage

P

L

(W)

8

4

0

0

Th=25°C; VDS= 36 V; IDQ= 50 mA; class-AB;
f = 1090 MHz; t

1523

=50µs; δ = 2%.

p

MGU496

4

VGS (V)

Fig.5 Load power as a function of gate-source

voltage; typical values.

2003 Nov 19 4

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-10

handbook, full pagewidth

C1 C2 C3 C4

Dimensions in mm.
Thecomponents are situated onone side of theRogers 6006 printed-circuit board(thickness = 0.64 mm; εr= 6.2), the otherside is unetched

and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.

51.75 51.75

C13

C14

C12

37.5

C6C7

C5

R1

C15

3.2 3.5

13.5

C8

C9

C10

6.0

9.3

C11

MGU497

Fig.6 Printed-circuit board for class-AB test circuit.

60

List of components for class-AB test circuit (see Fig.6)

COMPONENT DESCRIPTION VALUE

C1 multilayer ceramic chip capacitor; note 1 2.7 pF
C2, C11 multilayer ceramic chip capacitor; note 1 56 pF
C3 tekelec trimmer; type 37293 0.8 to 8 pF
C4 multilayer ceramic chip capacitor; note 1 3.6 pF
C5 multilayer ceramic chip capacitor; note 1 6.2 pF
C6 multilayer ceramic chip capacitor; note 1 2 pF
C7, C13 multilayer ceramic chip capacitor; note 1 62 pF
C8 multilayer ceramic chip capacitor; note 1 11 pF
C9 multilayer ceramic chip capacitor; note 1 1.5 pF
C10 multilayer ceramic chip capacitor; note 1 6.2 pF
C12 multilayer ceramic chip capacitor; note 2 20 nF
C14 electrolytic capacitor 4.7µF; 50 V
C15 multilayer ceramic chip capacitor; note 1 36 pF
R1 SMD resistor (0805) 22 Ω

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. American Technical Ceramics type 200B or capacitor of same quality.

2003 Nov 19 5

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-10

PACKAGE OUTLINE

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

D

A

3

D

1

F

SOT467C

U

q

1

B

C

c

1

E

H

U

2

A

p

w

M M M

AB

1

1

E

2

w

M M

scale

C

2

b

0 5 10 mm

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inch

OUTLINE
VERSION

SOT467C

A

4.67

3.94

0.184

0.155

b

5.59

5.33

0.220

0.210

cD

0.15

0.10

0.006

0.004

IEC JEDEC EIAJ

9.25

9.04

0.364

0.356

D

9.27

9.02

0.365

0.355

E

1

5.92

5.77

0.233

0.235

0.227

0.225

REFERENCES

FH p q

E

1

5.97

1.65

1.40

0.065

0.055

18.54

17.02

0.73

0.67

5.72

2003 Nov 19 6

3.43

3.18

0.135

0.125

Q

2.21

1.96

0.087

0.077

14.27

0.562

U

20.45

20.19

0.805

0.795

1

U

w

2

5.97

0.25

5.72

0.235

0.010 0.020

0.225

EUROPEAN

PROJECTION

w

1

2

0.51

ISSUE DATE

99-12-06
99-12-28

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-10

DATA SHEET STATUS

LEVEL

DATASHEET

STATUS

I Objective

data

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

II Preliminary

data

Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips Semiconductors
reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order to
improve the design, manufacturing and supply. Relevant changes will be
communicated via a Customer Product/Process Change Notification (CPCN).

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditions above thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that such applicationswillbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result inpersonal injury. Philips
Semiconductorscustomersusing or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. Whenthe productis in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Nov 19 7

Philips Semiconductors Product specification

Avionics LDMOS transistor BLA1011-10

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Nov 19 8

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R77/05/pp9 Date of release: 2003 Nov 19 Document order number: 9397 750 12244

SCA75