Philips bla0912-250 Datasheet

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BLA0912-250

Avionics LDMOS transistor

Rev. 3 — 26 November 2010 Product data sheet

1. Product profile

1.1 General description

Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.

Table 1. Test information

Typical RF performance measured in common source class-AB test circuit at PL= 250 W and 960 MHz to 1215 MHz frequency band. T

Mode of operation f t

all modes 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5 TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 ±5 Mode-S 1030 to 1090 128 2 36 250 13.5 0 .8 50 0.1 25 6 0.15 ±5

JTIDS 960 to 1215 3300 22 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5

= 25 °C; Z

(MHz) (μs) % (V) (W) (dB) (dB) (%) (dB) (ns) (ns) (K/W) (deg)

1030 to 1090 340 1 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5

= 0.15 K/W; unless otherwise specified.

th(j-h)

δ VDSPLGpΔG

pηDPdroop(pulse)tr

th(j-h)ϕins(rel)

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features and benefits

 High power gain  Easy power control  Excellent ruggedness  Source on mounting base eliminates DC isolators, reducing common mode

inductance.

1.3 Applications

 Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such

as Mode-S, TCAS and JTIDS, DME or TACAN.

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NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1drain 2gate 3source

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLA0912-250 - flanged LDMOST ceramic package;

BLA0912-250

Avionics LDMOS transistor

[1]

Name Description Version

2 mounting holes; 2 leads

sym03

SOT502A

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

stg

drain-source voltage - 75 V gate-source voltage - ±22 V total power dissipation Th≤ 25 °C; tp=50μs; δ =2% - 700 W storage temperature −65 +150 °C junction temperature - 200 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-h)

[1] Thermal resistance is determined under RF operating conditions; tp = 100 μs, δ = 10 %.

transient thermal impedance from junction to heatsink

Th = 25 °C

[1]

0.18 K/W

Product data sheet Rev. 3 — 26 November 2010 2 of 13

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NXP Semiconductors

6. Characteristics

Table 6. DC characteristics

Tj = 25 °C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

(BR)DSS

GS(th)

DSS

DSX

GSS

DS(on)

Table 7. RF characteristics

RF performance in common source class-AB circuit; Th = 25 °C; Zth = 0.15 K/W; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

f frequency 960 - 1215 MHz P

th(j-h)

droop(pulse)

resp(sp)

BLA0912-250

Avionics LDMOS transistor

drain-source breakdown voltage VGS=0V; ID=3mA 75 - - V gate-source threshold voltage VDS= 10 V; ID=300mA 4 - 5 V drain leakage current VGS=0V; VDS=36V--1μA drain cut-off current VGS=V

=10V

GSth

+9 V;

gate leakage current VGS=20V; VDS=0V--1μA forward transconductance VDS=10V; ID=10A - 9 - S drain-source on-state resistance VGS=9V; ID=10A - 60 - mΩ

drain-source voltage - - 36 V

output power tp=100μs; δ = 10 % 250 - W power gain PL= 250 W 12 13 dB drain efficiency tp=100μs; δ = 10 % 40 50 % transient thermal impedance

tp=100μs; δ =10%--0.2K/W

from junction to heatsink heatsink temperature −55 - +70 °C pulse droop power tp=100μs; δ =10% - 0.1 0.5 dB spurious response VSWR

=2:1 - - −60 dBc

load

rise time - 25 50 ns fall time - 6 25 ns

45 - - A

6.1 Ruggedness in class-AB operation

The BLA0912-250 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: V f = 960 MHz to 1215 MHz at rated load power.

Product data sheet Rev. 3 — 26 November 2010 3 of 13

=36V;

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NXP Semiconductors

7. Application information

7.1 Impedance information

Table 8. Typical imp ed ance

T ypical values per section unless otherwise specified.

f Z MHz Ω Ω

960 0.89 − j1.70 1.53 − j1.13 1030 1.37 − j1.23 1.47 − j0.99 1090 2.09 − j1.27 1.38 − j0.85 1140 2.40 − j1.97 1.30 − j0.71 1215 1.51 − j2.61 1.17 − j0.47

BLA0912-250

Avionics LDMOS transistor

drain

gate

Fig 1. Definition of transistor impeda nc e

7.2 Application circuit

L1 L8L7

001aaf05

L6L4C1 L3

C4C3C2

001aab08

See Table 9 for details of striplines.

Fig 2. Layout of class-AB application circuit

Product data sheet Rev. 3 — 26 November 2010 4 of 13

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NXP Semiconductors

Table 9. Layout details

See Figure 2. Striplines are on a Rodgers Duroid 6010 Printed-Circuit Board (PCB); thickness = 0.64 mm

Component Description Dimensions

Input circuit

L1 stripline 5 mm × 0.8 mm C1 stripline 1.2 mm × 3.5 mm L2 stripline capacitor pad: 1 mm × 1 mm (1×)

L3 stripline 3 mm × 2 mm C2 stripline 4 mm × 6.5 mm L4 stripline 5 mm × 1 mm C3 stripline 8.8 mm × 30 mm + 0.2 mm × 13 mm

Output circuit

C4 stripline 0.2 mm × 13 mm + 19 mm × 17.1 mm L5 stripline 2.5 mm × 2.3 mm L6 stripline 4 mm × 1 mm C5 stripline 3 mm × 6.6 mm L7 stripline curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×)

L8 stripline 2.5 mm × 0.8 mm 1/4 λ line stripline curve: width 1 mm; angle 90°; radius 0.8 mm

BLA0912-250

Avionics LDMOS transistor

= 10.2 F/m;

curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×) vertical: 3.9 mm × 0.8 mm (2×) vertical: 9.4 mm × 0.8 mm (3×) horizontal: 0.5 mm × 0.8 mm (4×)

vertical: 2.2 mm × 0.8 mm (2×) vertical: 6 mm × 0.8 mm (1×) horizontal: 1 mm × 0.8 mm (2×)

vertical: 5 mm × 1 mm horizontal: 19 mm × 1 mm

Product data sheet Rev. 3 — 26 November 2010 5 of 13

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NXP Semiconductors

BLA0912-250

Avionics LDMOS transistor

40 40

C1 C2

C4 C5

C8 C10C9

001aab08

Dimensions in mm. See Table 10

for list of components.

Fig 3. Component layout for class-AB application circuit

Table 10. List of components

See Figure 3

Component Description Value Remarks

C1, C3, C9 multilayer ceramic chip capacitor 1 nF C2, C6, C10 multilayer ceramic chip capacitor 22 pF

[1] [2]

C4 tantalum SMD capacitor 47 μF; 20 V KEMET: T491D476M020AS C5 multilayer ceramic chip capacitor 56 pF C7 multilayer ceramic chip capacitor 47 pF

[2] [2]

C8 tantalum SMD capacitor 22 μF; 63 V R1 SMD resistor 51 Ω 0805 R2 resistor 49.9 Ω

[1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality.

Product data sheet Rev. 3 — 26 November 2010 6 of 13

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NXP Semiconductors

8. Test information

8.1 RF performance

Typical RF performance measured in common source class-AB test circuit at PL= 250 W and 960 MHz to 1215 MHz frequency band. T otherwise specified.

= 25 °C; Z

BLA0912-250

Avionics LDMOS transistor

= 0.15 K/W; unless

th(j-h)

(dB)

940 124011401040990 11901090

001aab078

f (MHz)

(%)

Th = 25 °C; VDS = 36 V; IDq= 150 mA; class-AB; t

= 100 μs; δ =10%.

Fig 4. Power gain and drain efficiency as function of

frequency; typical values

(dB)

0 300200100

T t

(2)

=25°C; VDS=36V; IDq= 150 mA; class-AB;

(5)

(1) (4) (3)

= 100 μs; δ =10%.

001aab079

PL(W)

(1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz

Fig 5. Power gain as a function of load power;

typical values

Product data sheet Rev. 3 — 26 November 2010 7 of 13

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NXP Semiconductors

BLA0912-250

Avionics LDMOS transistor

300

250

(W)

200

150

100

0 6 10 142161248

(5)

(2)

(3)

001aab080

(1)

(4)

Pi (W)

Th=25°C; VDS=36V; IDq= 150 mA; class-AB; t

= 100 μs; δ =10%.

(1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz

Fig 6. Load power as a function of input power;

typical values

(%)

0 30020010050 150 250

=25°C; VDS=36V; IDq= 150 mA; class-AB;

= 100 μs; δ =10%.

(1)

(3)

(5)

(2)

001aab081

(4)

PL (W)

(1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz

Fig 7. Efficiency as a function of load power;

typical values

Product data sheet Rev. 3 — 26 November 2010 8 of 13

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NXP Semiconductors

BLA0912-250

Avionics LDMOS transistor

9. Package outline

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502

M M

0 5 10 mm

scale

M M M

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

inches

4.72

3.43

0.186

0.135

OUTLINE VERSION

SOT502A

12.83

12.57

0.505

0.495

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

9.50

9.53

9.30

9.25

0.374

0.375

0.366

0.364

REFERENCES

1.14

0.89

0.045

0.035

19.94

18.92

0.785

0.745

5.33

4.32

0.210

0.170

3.38

3.12

0.133

0.123

1.70

1.45

0.067

0.057

34.16

33.91

1.345

1.335

EUROPEAN

PROJECTION

9.91

9.65

0.390

0.380

0.25 0.5127.94

0.01 0.021.100

ISSUE DATE

99-12-28 03-01-10

Fig 8. Package outline SOT502A

Product data sheet Rev. 3 — 26 November 2010 9 of 13

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10. Abbreviations

Table 11. Abbreviations

Acronym Description

DC Direct Current DME Distance Measuring Equipment JTIDS Joint Tactical Information Distribution System LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor Mode-S Mode Select RF Radio Frequency SMD Surface Mounted Device TACAN TACtical Air Navigation TCAS Traffic Collision Avoidance System VSWR Voltage Standing-Wave Ratio

BLA0912-250

Avionics LDMOS transistor

11. Revision history

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLA0912-250 v.3 20101126 Product data sheet - BLA0912-250_2 Modifications:

BLA0912-250_2 20040722 Product data sheet - BLA0912-250_N_1 BLA0912-250_N_1 20031024 Preliminary data sheet - 9397 750 12224

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Table 10 on page 6: The remark of component C8 has been removed.

• Table 10 on page 6: The value of compon ent C8 has been specified in more detail.

Product data sheet Rev. 3 — 26 November 2010 10 of 13

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NXP Semiconductors

BLA0912-250

Avionics LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmenta l damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 3 — 26 November 2010 11 of 13

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NXP Semiconductors

BLA0912-250

Avionics LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 3 — 26 November 2010 12 of 13

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NXP Semiconductors

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Impedance information . . . . . . . . . . . . . . . . . . . 4

7.2 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

8.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BLA0912-250

Avionics LDMOS transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 26 November 2010

Document identifier: BLA0912-250