Philips BGY916 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

andbook, halfpage

M3D167

BGY916

UHF amplifier module

Product specification
Supersedes data of 1997 Jul 11

1998 May 27

Philips Semiconductors Product specification

UHF amplifier module BGY916

FEATURES

• 26 V nominal supply voltage

• 16 W output power into a load of 50 Ω with an RF drive

power of 25 mW.

APPLICATIONS

• Base station transmitting equipment operating in the
920 to 960 MHz frequency range.

DESCRIPTION

The BGY916 is a three-stage UHF amplifier module in a
SOT365A package. It consists of one NPN silicon planar
transistor die and two silicon MOS-FET dies mounted on a
metallized ceramic AlN substrate, together with matching
and bias circuitry.

QUICK REFERENCE DATA

RF performance at T

=25°C.

mb

PINNING - SOT365A

PIN DESCRIPTION

1 RF input
2V
3V
4 RF output

flange ground

handbook, halfpage

Fig.1 Simplified outline.

S1
S2

2134

MSA447

MODE OF OPERATION

f

(MHz)

V

S1

; V

(V)

S2

P

(W)

L

G

p

(dB)

η

(%)

ZS; Z

(Ω)

CW 920 to 960 26 16 ≥28 ≥35 50

L

1998 May 27 2

Philips Semiconductors Product specification

UHF amplifier module BGY916

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

S1

V

S2

P

D

P

L

T

stg

T

mb

CHARACTERISTICS

=25°C; VS1=VS2=26V; PL=16W; ZS=ZL=50Ω unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

f frequency 920 − 960 MHz
I

S1

I

S2

P

L

G

p

∆G

p

η efficiency 35 40 − %
H

2

H

3

VSWR

F noise figure − 5 8 dBc
B AM bandwidth 2 −−MHz

DC supply voltage − 28 V
DC supply voltage − 28 V
input drive power − 80 mW
load power − 25 W
storage temperature −30 +100 °C
operating mounting base temperature −10 +90 °C

supply current − 50 − mA
supply current PD< −60 dBm − 150 − mA
load power 16 19 − W
power gain 28 30 32 dB
gain ripple 40 dB dynamic range at

− 14dB

f = 920 to 960 MHz

second harmonic −−47 −35 dBc
third harmonic −−55 −45 dBc
input VSWR − 1:1.5 2:1

in

isolation V
stability VSWR ≤ 3 : 1 through all phases;

reverse intermodulation P

=0 −−−40 dBm

S1

−−−60 dBc

V

=24to28V

S2
carrier

=16W; P

interference

=16µW;

−−68 −65 dBc

fi=fc±600 kHz

ruggedness VSWR ≤ 5 : 1 through all phases no degradation

1998 May 27 3

Philips Semiconductors Product specification

UHF amplifier module BGY916

50

handbook, halfpage

P

L

(dBm)

40

30

20

10

0

900

VS1=VS2= 26V; ZS=ZL=50Ω;Tmb=25°C.

PD (dBm)

+15
+12

+9
+6

+3

0

920 940 960

f (MHz)

Fig.2 Load power as a function of frequency;

typical values.

MBG286

980

50

handbook, halfpage

G

p

(dB)

40

30

20

10

0

900

VS1=VS2=26V; PL=16W; ZS=ZL=50Ω;Tmb=25°C.

920 940 960

η

G

p

f (MHz)

Fig.3 Power gain and efficiency as functions of

frequency; typical values.

MBG287

980

50

η

(%)

40

30

20

10

0

20

handbook, halfpage

H , H

23
(dBc)

30

H

40

50

60

70

900

VS1=VS2= 26 V; PL=16W; ZS=ZL=50Ω;Tmb=25°C.

2

H

3

920 940 960

Fig.4 Harmonics as a function of frequency;

typical values.

MBG285

f (MHz)

980

50

handbook, halfpage

P

L

(dBm)

30

10

−10

−30

01020

f = 940 MHz; VS2=26V; ZS=ZL=50Ω;Tmb=25°C.

Fig.5 Load power as a function of supply

voltage; typical values.

MGD185

S1

(V)

30

V

1998 May 27 4