Product specification
Supersedes data of 1997 Apr 18
2001 Oct 22
Page 2
Philips SemiconductorsProduct specification
600 MHz, 18.5 dB gain push-pull amplifierBGY685AD
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• CATV systems operating over a
40 to 600 MHz frequency range.
DESCRIPTION
Hybrid high dynamic range cascode
amplifier module with Darlington
pre-stage dies operating at a voltage
supply of +24 V in a SOT115J
package.
QUICK REFERENCE DATA
PINNING - SOT115J
PINDESCRIPTION
1input
2common
3common
5+V
B
7common
8common
9output
page
2
351
Side view
Fig.1 Simplified outline.
789
MSA319
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
G
p
power gainf = 50 MHz1819dB
f = 600 MHz18.75−dB
I
tot
total current consumption (DC)VB=24V−250mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOLPARAMETERMIN.MAX.UNIT
V
i
T
stg
T
mb
RF input voltage−60dBmV
storage temperature−40+100°C
operating mounting base temperature−20+100°C
2001 Oct 222
Page 3
Philips SemiconductorsProduct specification
600 MHz, 18.5 dB gain push-pull amplifierBGY685AD
CHARACTERISTICS
Table 1 Bandwidth 40 to 600 MHz; VB= 24 V; T
=30°C; ZS=ZL=75Ω
case
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
G
p
power gainf = 50 MHz1819dB
f = 600 MHz18.75−dB
SLslope cable equivalentf = 40 to 600 MHz0.22.2dB
FLflatness of frequency responsef = 40 to 600 MHz−±0.3dB
S
11
input return lossesf = 40 to 80 MHz20−dB
f = 80 to 160 MHz19−dB
f = 160 to 600 MHz18−dB
S
22
output return lossesf = 40 to 80 MHz20−dB
f = 80 to 160 MHz19−dB
f = 160 to 600 MHz18−dB
S
21
CTBcomposite triple beat85 channels flat;
phase responsef = 50 MHz−45+45deg
−−62dB
V
= 44 dBmV;
o
measured at 595.25 MHz
X
mod
cross modulation85 channels flat;
−−58dB
Vo= 44 dBmV;
measured at 55.25 MHz
CSOcomposite second order distortion85 channels flat;
V
= 44 dBmV;
o
−−60dB
measured at 596.5 MHz
d
2
V
o
second order distortionnote 1−−70dB
output voltagedim= −60 dB; note 262−dBmV
Fnoise figuref = 50 MHz−6dB
f = 600 MHz−8dB
I
tot
total current consumption (DC)note 3−250mA
Notes
p=Vq
= 44 dBmV;
1. V
fp= 55.25 MHz; fq= 541.25 MHz;
measured at fp+fq= 596.5 MHz.
2. Measured according to DIN45004B:
fp= 590.25 MHz; Vp=Vo;
fq= 597.25 MHz; Vq=Vo−6 dB;
fr= 599.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 588.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 223
Page 4
Philips SemiconductorsProduct specification
600 MHz, 18.5 dB gain push-pull amplifierBGY685AD
Table 2 Bandwidth 40 to 550 MHz; VB= 24 V; T
=30°C; ZS=ZL=75Ω
case
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
G
p
power gainf = 50 MHz1819dB
f = 550 MHz18.8−dB
SLslope cable equivalentf = 40 to 550 MHz0.22.2dB
FLflatness of frequency responsef = 40 to 550 MHz−±0.3dB
S
11
input return lossesf = 40 to 80 MHz20−dB
f = 80 to 160 MHz19−dB
f = 160 to 550 MHz18−dB
S
22
output return lossesf = 40 to 80 MHz20−dB
f = 80 to 160 MHz19−dB
f = 160 to 550 MHz18−dB
S
21
CTBcomposite triple beat77 channels flat;
phase responsef = 50 MHz−45+45deg
−−65dB
V
= 44 dBmV;
o
measured at 547.25 MHz
X
mod
cross modulation77 channels flat;
−−60dB
Vo= 44 dBmV;
measured at 55.25 MHz
CSOcomposite second order distortion77 channels flat;
V
= 44 dBmV;
o
−−62dB
measured at 548.5 MHz
d
2
V
o
second order distortionnote 1−−72dB
output voltagedim= −60 dB; note 263−dBmV
Fnoise figuref = 50 MHz−6dB
f = 550 MHz−7.5dB
I
tot
total current consumption (DC)note 3−250mA
Notes
p=Vq
= 44 dBmV;
1. V
fp= 55.25 MHz; fq= 493.25 MHz;
measured at fp+fq= 548.5 MHz.
2. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=Vo;
fq= 547.25 MHz; Vq=Vo−6 dB;
fr= 549.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 538.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 224
Page 5
Philips SemiconductorsProduct specification
600 MHz, 18.5 dB gain push-pull amplifierBGY685AD
Table 3 Bandwidth 40 to 450 MHz; VB= 24 V; T
=30°C; ZS=ZL=75Ω
case
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
G
p
power gainf = 50 MHz1819dB
f = 450 MHz18.6−dB
SLslope cable equivalentf = 40 to 450 MHz0.21.8dB
FLflatness of frequency responsef = 40 to 450 MHz−±0.3dB
S
11
input return lossesf = 40 to 80 MHz20−dB
f = 80 to 160 MHz19−dB
f = 160 to 450 MHz18−dB
S
22
output return lossesf = 40 to 80 MHz20−dB
f = 80 to 160 MHz19−dB
f = 160 to 450 MHz18−dB
S
21
CTBcomposite triple beat60 channels flat;
phase responsef = 50 MHz−45+45deg
−−66dB
V
= 46 dBmV;
o
measured at 445.25 MHz
X
mod
cross modulation60 channels flat;
−−58dB
Vo= 46 dBmV;
measured at 55.25 MHz
CSOcomposite second order distortion60 channels flat;
V
= 46 dBmV;
o
−−67dB
measured at 446.5 MHz
d
2
V
o
second order distortionnote 1−−75dB
output voltagedim= −60 dB; note 265−dBmV
Fnoise figuref = 50 MHz−6dB
f = 450 MHz−7dB
I
tot
total current consumption (DC)note 3−250mA
Notes
p=Vq
= 46 dBmV;
1. V
fp= 55.25 MHz; fq= 391.25 MHz;
measured at fp+fq= 446.5 MHz.
2. Measured according to DIN45004B:
fp= 440.25 MHz; Vp=Vo;
fq= 447.25 MHz; Vq=Vo−6 dB;
fr= 449.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 438.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 225
Page 6
Philips SemiconductorsProduct specification
600 MHz, 18.5 dB gain push-pull amplifierBGY685AD
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leadsSOT115J
D
E
A
2
A
L
F
S
Zp
1
5
78923
c
d
U
Q
B
U
1
2
y M
p
q
B
0510 mm
W
scale
e
e
1
b
q
2
q
1
y M
B
w
y M
M
B
DIMENSIONS (mm are the original dimensions)
A
UNIT
max.
max.
mm 20.8 9.1
OUTLINE
VERSION
SOT115J
A
2
c
bF
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
0.38
IEC JEDEC EIAJ
D
max.
d
max.
E
max.
ee
1
REFERENCES
L
min.
2001 Oct 226
Q
p
4.15
3.85
q
q1q
max.
2.4 38.1 25.4 10.2 4.2 44.75 80.25 0.1 3.8
2
U
1
S
max.
EUROPEAN
PROJECTION
W
U
2
6-32
UNC
yw
ISSUE DATE
99-02-06
Z
max.
Page 7
Philips SemiconductorsProduct specification
600 MHz, 18.5 dB gain push-pull amplifierBGY685AD
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective dataDevelopmentThis data sheet contains data from the objective specification for product
Preliminary dataQualificationThis data sheet contains data from the preliminary specification.
Product dataProductionThis data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditions above those giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that such applications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result inpersonal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of theseproducts,conveysno licence or title
under any patent, copyright, or mask work right to these
products,and makes no representationsorwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 227
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com.Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands613518/04/pp8 Date of release: 2001 Oct 22Document order number: 9397 750 08806
SCA73
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