Philips BGY212A Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

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M3D373

BGY212A

UHF amplifier module

Preliminary specification 1999 Aug 23

Philips Semiconductors Preliminary specification

UHF amplifier module BGY212A

FEATURES

• 3.5 V nominal supply voltage

• 2 W output power

• Easy output power control by DC voltage.

APPLICATIONS

• Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 1710 to 1785 MHz frequency range.

DESCRIPTION

The BGY212A is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit components on a metallized ceramic substrate.

PINNING - SOT482C

PIN DESCRIPTION

1 RF input 2V 3V 4 RF output 5 ground

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43 251

Bottom view

Fig.1 Simplified outline

C

S

MBK201

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

=25°C.

mb

f

(MHz)

V

(V)

S

V

C

(V)

P

L

(dBm)

G

(dB)

p

η

(%)

, Z

Z

S

(Ω)

Pulsed; δ = 1 : 8 1710 to 1785 3.5 ≤2.2 typ.33 typ.33 typ.40 50

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

V

C

P

D

P

L

T

stg

T

mb

DC supply voltage VC< 0.2 V; PD=0mW − 7V

V

≥ 0.2 V − 4.1 V

C

DC control voltage − 2.7 V input drive power − 10 dBm load power − 34.1 dBm storage temperature −40 +100 °C operating mounting base temperature −30 +100 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

L

1999 Aug 23 2

Philips Semiconductors Preliminary specification

UHF amplifier module BGY212A

CHARACTERISTICS

Z otherwise specified.

I

I P

G η efficiency P H H VSWR

P

t

=50Ω; PD=0dBm; VS= 3.5 V; VC≤ 2.2 V; f = 1710 to 1785 MHz; Tmb=25°C; δ =1:8; tp= 575 µs unles

S=ZL

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Q

CM

L

p

2

3

leakage current VC=0.2V −−10 µA

V

= 0.2 V; VS=7V − 520mA

C

peak control current adjust VC for PL=32dBm −−3mA load power VC= 2.2 V; VS=3.5V − 33.2 − dBm

V

= 2.2 V; VS= 3.2 V 32 32.3 − dBm

C

V

= 2.2 V; VS=3.2V; Tmb=85°C 31 31.8 − dBm

C

power gain PL=32dBm − 32 − dB

=32dBm − 40 − %

L

second harmonic PL=32dBm −−−35 dBc third harmonic PL=32dBm −−−40 dBc input VSWR PL= 2 to 32 dBm − 3:1

in

stability V

= 3.2 to 4.1 V; PD= −3to3dBm;

S

=0to2.2V; PL≤ 33 dBm;

V

C

−−−60 dBc

VSWR ≤ 8 : 1 through all phases

isolation V

= 0.2 V; PD=3dBm −−36 −33 dBm

C

control bandwidth tbd −−MHz

n

noise power PL= 2 to 32 dBm;

−−73 −71 dBm bandwidth = 100 kHz; 20 MHz above transmission band

AM/AM conversion P

AM/PM conversion P

control slope P

T

conversion PL= 32 dBm; f = 1785 MHz

X/RX

r

f

carrier rise time PL= 2 to 32 dBm; time to settle

carrier fall time PL= 2 to 32 dBm; time to fall below

with 3% AM; f = 100 kHz;

D

P

= 2 to 32 dBm

L

= −0.5to0.5dBm;

D

= 2 to 32 dBm

P

L

= −8to+2dBm − tbd − dB / V

L

P

= 2 to 32 dBm − tbd − dB / V

L

P

(1805 MHz) / PD(1765 MHz)

L

within −0.5 dB of final P

L

− 58%

−−tbd deg/dB

− 28 30 dB

− 1.5 2 µs

− 33 dBm

ruggedness V

= 4.1 V; adjust VC for

S

P

= 33 dBm; VSWR ≤ 8 : 1 through

L

no degradation

all phases

1999 Aug 23 3

Philips Semiconductors Preliminary specification

Fig.2 Load power as a function of control voltage;

typical values.

ZS=ZL=50Ω; VS= 3.5 V; PD=0dBm; T

mb

=25°C; δ =1:8; tp=575µs.

Fig.4 Efficiency as a function of load power;

typical values.

ZS=ZL=50Ω; VS= 3.5 V; PD=0dBm; T

mb

=25°C; δ =1:8; tp=575µs.

UHF amplifier module BGY212A

3

P

L

(W)

2

1710MHz

1785MHz

1

0

11.522.5 V

(V)

C

4

P

L

(W)

3

1710MHz

1785MHz

2

1

0

2345

(V)

V

S

ZS=ZL=50Ω; VC=2.2V; PD=0dBm;

=25°C; δ =1:8; tp= 575 µs.

T

mb

Fig.3 Load power as a function of supply voltage;

typical values.

50

η

(%)

40

30

20

10

0

00.511.522.5

1999 Aug 23 4

1785MHz

1710MHz

(W)

P

L

3

P

L

(W)

2

1

0

1700 1750 1800

f (MHz)

ZS=ZL=50Ω; VS= 3.5 V; PD=0dBm; VC=2.2V;

=25°C; δ =1:8; tp=575µs.

T

mb

Fig.5 Load power as a function of frequency;

typical values.