Philips BGF802-20 Technical data
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D737
BGF802-20
CDMA800 power module
Product specification
Supersedes data of 2002 Nov 12
2003 Feb 24
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
FEATURES
• Typical CDMAIS95 performance at a supply voltage of
28 V:
– Output power = 3 W
– Gain = 30 dB
– Efficiency = 18%
– ACPR < -53 dBc at 750 kHz and BW = 30 kHz
– ACPR < -69 dBc at 1.98 MHz and BW = 30 kHz.
• Low distortion to CDMA signals
• Excellent 2-tone performance
• Low die temperatures using copper flange
• Integrated temperature compensated bias
• 50 Ω input/output system
• Flat gain over frequency range.
APPLICATIONS
• Base station RF power amplifiers in the 869 to 894 MHz
frequency range
• CDMA IS95, CDMA2000, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).
PINNING - SOT365C
PIN DESCRIPTION
1 RF input
2V
3 RF output
Flange ground
Top view
Fig.1 Simplified outline.
S
1
23
MBL257
DESCRIPTION
25 W LDMOS power amplifier module for base station
amplifier applications in the 869 to 894 MHz range.
QUICK REFERENCE DATA
Typical RF performance at Tmb=25°C.
MODE OF OPERATION
f
(MHz)
V
(V)
DS
P
(W)
L
G
(dB)
p
η
(%)
ACPR
(dBc)
EVM
(%)
CW 869 to 894 28 25 29 48 −−
IS95 CDMA
(1)
869 to 894 28 3 30 18 −53
GSM EDGE 869 to 894 26 2.5 30 16 −65
−69
(2)
(3)
(4)
−
0.4
Notes
1. IS95 CDMA (Pilot, paging, sync and traffic codes 8−13).
2. ACPR 750 kHz at 30 kHz resolution bandwidth.
3. ACPR 1.98 MHz at 30 kHz resolution bandwidth.
4. ACPR 400 kHz at 30 kHz resolution bandwidth.
2003 Feb 24 2
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
S
P
D
P
L
T
stg
T
mb
CHARACTERISTICS
Tmb=25°C; VS= 28 V; PL= 3.0 W; f = 869 to 894 MHz; ZS=ZL=50Ω; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DQ
P
1dB
G
p
∆G
p freq
∆G
p pwr
∆ϕ
freq
G
OB
VSWR
in
H
2
H
3
IS95 CDMA (PL= 3 W average)
DC supply voltage − 30 V
input drive power − 100 mW
load power − 30 W
storage temperature −30 +100 °C
operating mounting base temperature −20 +90 °C
quiescent current (pin 2) PD= 0 mW 245 280 320 mA
load power at 1 dB gain compression 18 25 − W
power gain 28 30 32 dB
gain flatness over
− 0.2 1.0 dB
frequency range
gain flatness over power
PL= 30 mW up to 3 W −0.8 −0.2 0.2 dB
band
phase linearity over
− 0.2 − deg
frequency range
delay flatness − 200 − ps
out of band gain small signal, PD= 0 dBm;
f < 869 MHz, f > 894 MHz
−−G
Pimax
+1
note 1
dB
input VSWR − 1.6:1 2.0:1
second harmonic −−37 −34 dBc
third harmonic −−61 −58 dBc
stability VSWR ≤ 3 : 1 through all
phases; V
=25to28V
S2
ruggedness VSWR = 10 : 1 through all
phases; P
=5W
L
all spurious outputs more than 60 dB
below desired signal
no degradation in output power
η efficiency 15 18 − %
ACPR
ACPR
750 kHz
1.98 MHz
spectral regrowth;
measured in 30 kHz RBW
−−53 −49 dBc
−−69 −66 dBc
Note
1. G
is small signal in-band gain.
Pi
2003 Feb 24 3
Philips Semiconductors Product specification
CDMA800 power module BGF802-20
6
P
L (AV)
MBL762
(W)
30.4
handbook, halfpage
G
p
(dB)
30
29.6
29.2
28.8
024 8
f = 882 MHz.
G
p
η
Fig.2 IS95 power gain and efficiency as functions
of load power; typical values.
40
30
20
10
0
(%)
−40
handbook, halfpage
ACPR
η
750 kHz
(dBc)
−45
−50
−55
−60
−65
f = 882 MHz.
024 8
MBL763
6
P
L (AV)
(W)
Fig.3 ACPR at 750 kHz as a function of output
power; typical values.
6
P
L (AV)
MBL764
(W)
−60
handbook, halfpage
ACPR
1.98 MHz
(dBc)
−64
−68
−72
−76
024 8
f = 882 MHz.
Fig.4 ACPR at 1.98 MHz as a function of output
power; typical values.
30.4
handbook, halfpage
G
p
(dB)
30
29.6
29.2
28.8
28.4
28
010203051525
f = 882 MHz.
G
p
MBL765
η
PL (W)
Fig.5 CW power gain and efficiency as functions
of load power; typical values.
60
50
40
30
20
10
0
(%)
η
2003 Feb 24 4
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