Datasheet BGY206 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D369
BGY206
UHF amplifier module
Product specification Supersedes data of 1998 Apr 15
1998 May 08
Page 2
Philips Semiconductors Product specification
UHF amplifier module BGY206
FEATURES
• 4.8 V nominal supply voltage
• 3 W output power
• Easy control of output power by DC voltage.
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range.
DESCRIPTION
The BGY206 is a three-stage UHF amplifier module in a SOT388B package. The module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate.
PINNING - SOT388B
PIN DESCRIPTION
1 RF input 2V 3V
C S
4 RF output
Flange ground
handbook, halfpage
1234
Top view
Fig.1 Simplified outline.
MBK197
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C.
mb
f
(MHz)
V
(V)
S
V
C
(V)
P
(W)
L
G
p
(dB)
η
(%)
Pulsed; δ = 1 : 8 880 to 915 4.8 ≤3.5 3 ≥30 typ. 45 50
ZS; Z
(Ω)
L
Page 3
Philips Semiconductors Product specification
UHF amplifier module BGY206
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
CHARACTERISTICS
Z
=50Ω;PD= 3 mW; VS= 4.8 V; VC≤ 3.5 V; f = 880 to 915 MHz; Tmb=25°C; δ = 1 : 8; tp= 575 µs;
S=ZL
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
Q
I
C
P
L
G
p
η efficiency adjust V H
2
H
3
VSWR
in
P
n
DC supply voltage VC< 0.5 V − 10 V DC control voltage − 4V input drive power − 13 mW load power − 3.5 W storage temperature −40 +100 °C operating mounting base temperature −30 +100 °C
leakage current VC= 0.5 V −−100 µA control current adjust VCfor PL=3W −−500 µA load power VC= 3.5 V 3 −−W
V
= 3.5 V; VS= 4.3 V; Tmb=85°C2 −−W
C
power gain adjust VCfor PL=3W 30 −−dB
for PL=3W 40 45 − %
C
second harmonic adjust VCfor PL=3W −−−40 dBc third harmonic adjust VCfor PL=3W −−−40 dBc input VSWR adjust VCfor PL=3W −−2.5:1 stability P
= 1.5 to 6 mW; VS=4to6.5V;
D
−−−60 dBc VC= 0 to 3.5 V; PL≤ 3W; VSWR ≤ 6 : 1 through all phases
isolation V
= 0.5 V −−−36 dBm
C
control bandwidth 1 −−MHz noise power PL= 3 W; bandwidth = 30 kHz;
−−−85 dBm 20 MHz above transmission band
ruggedness V
= 6.5 V; adjust VCfor PL=3W;
S
no degradation
VSWR ≤ 10 : 1 through all phases
Page 4
Philips Semiconductors Product specification
UHF amplifier module BGY206
50
handbook, halfpage
P
L
(dBm)
30
880 MHz
915 MHz
10
-10
-30
1.2 1.6 3.63.2
ZS=ZL=50Ω; VS= 4.8V; PD= 3 mW; Tmb=25°C; δ= 1: 8; tp= 575 µs.
2.0 2.4 2.8
MGD352
VC (V)
Fig.2 Load power as a function of control voltage;
typical values.
40
P
L
(dBm)
30
20
10
0
−10
ZS=ZL=50Ω; VS= 4.8 V; adjust VCfor PL=3W; Tmb=25°C; δ = 1 : 8; tp= 575 µs.
915 MHz
880 MHz
−15 −10−25 −20 −50 5
MGD353
PD (dBm)
Fig.3 Load power as a function of drive power;
typical values.
handbook, halfpage
6
P
L
(W)
4
2
0
ZS=ZL=50Ω; VC= 3.5 V; PD= 3 mW;
=25°C; δ= 1: 8; tp= 575 µs.
T
mb
880 MHz
915 MHz
4567
MBK512
V
(V)
S
Fig.4 Load power as a function of supply voltage;
typical values.
50
handbook, halfpage
η
(%)
40
30
20
10
0
01
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; Tmb=25°C; δ= 1: 8; tp= 575 µs
915 MHz
880 MHz
234
P (W)
Fig.5 Efficiency as a function of load power;
typical values.
MGD355
L
Page 5
Philips Semiconductors Product specification
UHF amplifier module BGY206
handbook, halfpage
5
P
L
(W)
4
3
2
1
0
880 890 900
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; VC= 3.5 V; Tmb=25°C; δ= 1: 8; tp= 575 µs.
910
f (MHz)
Fig.6 Load power as a function of frequency;
typical values.
MGD356
920
910
MGD357
f (MHz)
handbook, halfpage
4
V
C
(V)
3
2
1
0
880 890 900
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; PL=3W; Tmb=25°C; δ= 1: 8; tp= 575 µs.
Fig.7 Control voltage as a function of frequency;
typical values.
920
−30
H
2, H3
(dBc)
−40
−50
−60
880
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; PL=3W; Tmb=25°C; δ= 1: 8; tp= 575 µs.
890 900 910
MGD358
H
3
H
2
f (MHz)
Fig.8 Harmonics as a function of frequency;
typical values.
920
Tmb (
MGD359
o
C)
handbook, halfpage
4
V
C
(V)
3
915 MHz
2
1
0
−40 0 40
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; PL=3W; δ= 1 : 8; tp= 575 µs.
880 MHz
Fig.9 Control voltage as a function of mounting
base temperature; typical values.
80
Page 6
Philips Semiconductors Product specification
UHF amplifier module BGY206
Tmb (
MGD360
o
C)
handbook, halfpage
5
P
L
(W)
4
880 MHz
3
2
1
0
−20 80
ZS=ZL=50Ω; VS= 4.3 V; PD= 3 mW; VC= 3.5 V; δ = 1 : 8; tp= 575 µs.
0204060
915 MHz
Fig.10 Load power as a function of mounting base
temperature (reduced supply voltage); typical values.
Tmb (
MGD361
o
C)
handbook, halfpage
5
P
L
(W)
4
3
2
1
0
−20 80
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; VC= 3.5 V; δ = 1 : 8; tp= 575 µs.
0204060
880 MHz
915 MHz
Fig.11 Load power as a function of mounting base
temperature; typical values.
30
handbook, halfpage
G
p
(dB)
20
10
0
0
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; f = 900 MHz; C1 = 0; R1 = 100 Ω; Tmb=25°C; δ = 1 : 8; tp= 575 µs.
12
PL = 25 dBm
15 dBm
34.8 dBm
f (MHz)
Fig.12 Control loop power gain as a function of
frequency on the control pin; typical values.
MGD362
30
PL (dBm)
MGD354
40
10
handbook, halfpage
Output AM
(%)
8
6
4
2
0
3
01020
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; Tmb=25°C; input amplitude modulation = 3%; δ = 1 : 8; tp= 575 µs.
880 MHz
915 MHz
Fig.13 Output amplitude modulation as a function
of load power; typical values.
Page 7
Philips Semiconductors Product specification
UHF amplifier module BGY206
handbook, full pagewidth
C5
C2
handbook, full pagewidth
Z
1
RF input
C1
R1
V
C
Fig.14 Test circuit.
90
MBK513
4321
C3
C4
typ.
1.35A
L1
V
S
Z
2
RF output
50 Ω input
V
C
Dimensions in mm.
Fig.15 Printed-circuit board layout.
50 Ω
output
47
V
S
MBH435
Page 8
Philips Semiconductors Product specification
UHF amplifier module BGY206
List of components (See Fig 14)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2 multilayer ceramic chip capacitor 680 pF 2222 851 11681 C3 tantalum capacitor 2.2 µF; 35 V − C4 electrolytic capacitor 47 µF; 40 V 2222 030 37479 C5 multilayer ceramic chip capacitor 100 nF 2222 852 47104 L1 Grade 4S2 Ferroxcube bead 4330 030 36300 Z
, Z
1
2
R1 metal film resistor 100 Ω; 0.6 W 2322 156 11001
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (ε thickness1⁄32inch.
stripline; note 1 50 Ω width 2.33 mm −
= 2.2);
r
Page 9
Philips Semiconductors Product specification
UHF amplifier module BGY206
SOLDERING
The indicated temperatures are those at the solder interfaces.
Advised solder types are types with a liquidus less than or equal to 210 °C.
Solder dots or solder prints must be large enough to wet the contact areas.
Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process is permitted.
Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module.
The maximum allowed temperature is 250 °C for 5 seconds.
The maximum ramp-up is 10 °C per second. The maximum cool-down is 5 °C per second.
Cleaning
The following fluids may be used for cleaning:
• Alcohol
• Bio-Act (Terpene Hydrocarbon)
• Acetone.
300
handbook, halfpage
T
(°C)
200
100
0
0
15234
MGM159
t (min)
Fig.16 Recommended reflow temperature profile.
Ultrasonic cleaning should not be used since this can cause serious damage to the product.
Page 10
Philips Semiconductors Product specification
UHF amplifier module BGY206
andbook, full pagewidth
footprint metallization
solder area occupied area
8.75
2.9
1.8
1.37
5.08
17.7
12.5 12
17.9
17.1
12.4
12.1
6.4
6
5.08
2.54
1.7
0.7
4
6.75
12.5
1
0.57
solder area
2.7
1.1
Dimensions in mm.
Fig.17 Footprint SOT388B.
1998 May 08 10
1.37
5.08
2.45
5.08
2.54
1.5
0.5
5.55
MGM150
7.55
1.67
Page 11
Philips Semiconductors Product specification
UHF amplifier module BGY206
PACKAGE OUTLINE
Rectangular single-ended surface-mount package; metal cap; 4 in-line leads
U
A
y
U
E
1
SOT388B
1234
L
DIMENSIONS (mm are the original dimensions)
UNIT cbee
mm
A
2.2
1.8
OUTLINE
VERSION
SOT388B
0.56
0.46
E
1
0.30
5.08
0.20
IEC JEDEC EIAJ
2.54
12.2
11.8
Q
b
eeZ
0 5 10 mm
L
0.7
0.3
REFERENCES
e
1
scale
QUU
17.3
3.4
16.9
3.0
w M
1
6.0
5.6
wZy
2.3
0.150.25
1.9
EUROPEAN
PROJECTION
c
ISSUE DATE
97-11-19
1998 May 08 11
Page 12
Philips Semiconductors Product specification
UHF amplifier module BGY206
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 May 08 12
Page 13
Philips Semiconductors Product specification
UHF amplifier module BGY206
NOTES
1998 May 08 13
Page 14
Philips Semiconductors Product specification
UHF amplifier module BGY206
NOTES
1998 May 08 14
Page 15
Philips Semiconductors Product specification
UHF amplifier module BGY206
NOTES
1998 May 08 15
Page 16
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Printed in The Netherlands 125108/00/04/pp16 Date of release: 1998 May 08 Document order number: 9397 75003827
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