Philips BGD508 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD508
CATV amplifier module
Product specification
Supersedes data of 1995 Nov 14
File under Discrete Semiconductors, SC16
1998 Mar 16
Philips Semiconductors Product specification
CATV amplifier module BGD508
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV systems in a SOT115J
package operating over a frequency range of
40 to 550 MHz at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
7 common
8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
351
789
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 35 37 dB
f = 550 MHz 36.5 − dB
I
tot
total current consumption (DC) VB=24V − 625 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 55 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1998 Mar 16 2
Philips Semiconductors Product specification
CATV amplifier module BGD508
CHARACTERISTICS
Bandwidth 40 to 550 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 35 37 dB
SL slope cable equivalent f = 40 to 550 MHz 0.2 2.2 dB
FL flatness of frequency response f = 40 to 550 MHz −±0.4 dB
S
11
S
22
S
21
input return losses f = 40 to 80 MHz 20 − dB
output return losses f = 40 to 80 MHz 20 − dB
phase response f = 50 MHz −45 +45 deg
CTB composite triple beat 77 channels flat;
X
mod
cross modulation 77 channels flat;
CSO composite second order distortion 77 channels flat;
d
2
V
o
second order distortion note 1 −−70 dB
output voltage dim= −60 dB; note 2 63 − dBmV
F noise figure f = 550 MHz − 7.5 dB
I
tot
total current consumption (DC) note 3 − 625 mA
= 24 V; Tmb=35°C; ZS=ZL=75Ω.
B
f = 550 MHz 36.5 − dB
f = 80 to 160 MHz 19 − dB
f = 160 to 550 MHz 18 − dB
f = 80 to 160 MHz 19 − dB
f = 160 to 550 MHz 18 − dB
V
= 44 dBmV;
o
measured at 547.25 MHz
Vo= 44 dBmV;
measured at 55.25 MHz
V
= 44 dBmV;
o
measured at 548.5 MHz
−−62 dB
−−65 dB
−−60 dB
Notes
1. f
= 55.25 MHz; Vp= 46 dBmV;
p
fq= 393.25 MHz; Vq= 46 dBmV;
measured at fp+fq= 548.5 MHz.
2. Measured according to DIN45004B:
fp= 440.25 MHz; Vp=Vo;
fq= 447.25 MHz; Vq=Vo−6 dB;
fr= 449.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 438.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
1998 Mar 16 3
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