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DISCRETE SEMICONDUCTORS
DATA SH EET
BGD502; BGD504
CATV power doubler amplifier
modules
Product specification
Supersedes data of February 1994
File under Discrete Semiconductors, SC16
1995 Oct 25
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Philips Semiconductors Product specification
CATV power doubler amplifier modules BGD502; BGD504
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
PINNING - SOT115C
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
age
123 5 789
Side view
Fig.1 Simplified outline.
Hybrid amplifier modules for CATV
systems operating over a frequency
range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz
BGD502 18 19 dB
BGD504 19.5 20.5 dB
power gain f = 550 MHz
BGD502 18.8 20.8 dB
BGD504 20.2 22.2 dB
I
tot
total current consumption (DC) VB= 24 V − 435 mA
MSB004 - 2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 60 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1995 Oct 25 2