DISCRETE SEMICONDUCTORS
DATA SH EET
BGD502; BGD504
CATV power doubler amplifier
modules
Product specification
Supersedes data of February 1994
File under Discrete Semiconductors, SC16
1995 Oct 25
Philips Semiconductors Product specification
CATV power doubler amplifier modules BGD502; BGD504
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
PINNING - SOT115C
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
age
123 5 789
Side view
Fig.1 Simplified outline.
Hybrid amplifier modules for CATV
systems operating over a frequency
range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz
BGD502 18 19 dB
BGD504 19.5 20.5 dB
power gain f = 550 MHz
BGD502 18.8 20.8 dB
BGD504 20.2 22.2 dB
I
tot
total current consumption (DC) VB= 24 V − 435 mA
MSB004 - 2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 60 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1995 Oct 25 2