Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD502
550 MHz, 18.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 1995 Oct 25
2001 Nov 15
Page 2
Philips Semiconductors Productspecification
550 MHz, 18.5 dB gain power doubler amplifier BGD502
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• TiPtAu metallized crystals ensure optimal reliability.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
B
7, 8 common
9 output
DESCRIPTION
Hybrid amplifier modules for CATV systems operating
over a frequency range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
handbook, halfpage
Side view
2
789
351
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 550 MHz 18.8 20.8 dB
I
tot
total current consumption (DC) VB=24V − 435 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 15 2
Page 3
Philips Semiconductors Productspecification
550 MHz, 18.5 dB gain power doubler amplifier BGD502
CHARACTERISTICS
Table 1 Bandwidth 40 to 550 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 550 MHz 0.2 − 2.2 dB
FL flatness of frequency response f = 40 to 550 MHz −−±0.3 dB
s
11
s
22
s
21
CTB composite triple beat 77 channels flat;
X
mod
CSO composite second order distortion 77 channels flat;
d
2
V
o
NF noise figure f = 550 MHz −−8dB
I
tot
power gain f = 50 MHz 18 − 19 dB
f = 550 MHz 18.8 − 20.8 dB
input return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 550 MHz 18 −−dB
output return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 550 MHz 18 −−dB
phase response f = 50 MHz +135 − +225 deg
−−−65 dB
V
= 44 dBmV;
o
measured at 547.25 MHz
cross modulation 77 channels flat;
−−−68 dB
Vo= 44 dBmV;
measured at 55.25 MHz
−−−62 dB
V
= 44 dBmV;
o
measured at 548.5 MHz
second order distortion note 1 −−−72 dB
output voltage dim = −60 dB; note 2 64 −−dBmV
total current consumption (DC) note 3 − 415 435 mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB;
fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 15 3
Page 4
Philips Semiconductors Productspecification
550 MHz, 18.5 dB gain power doubler amplifier BGD502
Table 2 Bandwidth 40 to 450 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 450 MHz 0.2 − 1.8 dB
FL flatness of frequency response f = 40 to 450 MHz −−±0.3 dB
s
11
s
22
s
21
CTB composite triple beat 60 channels flat;
CSO composite second order distortion 60 channels flat;
X
mod
d
2
V
o
NF noise figure f = 450 MHz −−7dB
I
tot
power gain f = 50 MHz 18 − 19 dB
f = 450 MHz 18.6 − 20.6 dB
input return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 450 MHz 18 −−dB
output return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 450 MHz 18 −−dB
phase response f = 50 MHz +135 − +225 deg
−−−67 dB
V
= 46 dBmV;
o
measured at 445.25 MHz
−−−60 dB
V
= 46 dBmV;
o
measured at 446.5 MHz
cross modulation 60 channels flat;
−−−67 dB
Vo= 46 dBmV;
measured at 55.25 MHz
second order distortion note 1 −−−75 dB
output voltage dim= −60 dB; note 2 67 −−dBmV
total current consumption (DC) note 3 − 415 435 mA
Notes
1. fp = 55.25 MHz; Vp = 46 dBmV; fq = 391.25 MHz; Vq = 46 dBmV; measured at fp + fq = 446.5 MHz.
2. Measured according to DIN45004B: fp = 440.25 MHz; Vp = Vo; fq = 447.25 MHz; Vq = Vo −6 dB;
fr = 449.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 438.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 15 4
Page 5
Philips Semiconductors Productspecification
550 MHz, 18.5 dB gain power doubler amplifier BGD502
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
E
A
2
A
L
F
S
Z p
1
5
78923
c
d
U
Q
B
U
1
2
y M
p
q
B
0 5 10 mm
W
scale
e
e
1
b
q
2
q
1
y M
B
w
y M
M
B
DIMENSIONS (mm are the original dimensions)
A
UNIT
max.
max.
mm 20.8 9.1
OUTLINE
VERSION
SOT115J
A
2
c
bF
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
0.38
IEC JEDEC EIAJ
D
max.
d
max.
E
max.
ee
1
REFERENCES
L
min.
2001 Nov 15 5
Q
p
4.15
3.85
q
q1q
max.
2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
2
U
1
S
max.
EUROPEAN
PROJECTION
W
U
2
6-32
UNC
yw
ISSUE DATE
99-02-06
Z
max.
Page 6
Philips Semiconductors Productspecification
550 MHz, 18.5 dB gain power doubler amplifier BGD502
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limitingvalues given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditions above thosegiven inthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected toresult in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyof these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products,and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Nov 15 6
Page 7
Philips Semiconductors Productspecification
550 MHz, 18.5 dB gain power doubler amplifier BGD502
NOTES
2001 Nov 15 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613518/04/pp8 Date of release: 2001 Nov 15 Document order number: 9397 750 08825
SCA73
Loading...