Philips BGA2712 User Manual
DATA SH EET
DISCRETE SEMICONDUCTORS
MBD128
BGA2712
MMIC wideband amplifier
Product specification
Supersedes data of 2002 Jan 31
2002 Sep 10
NXP Semiconductors Product specification
MAM455
132
4
1
63
2, 54
56
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E2-.
MMIC wideband amplifier BGA2712
FEATURES
Internally matched to 50
Wide frequency range (3.2GHz at 3 dB bandwidth)
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
5 dBm saturated output power at 1 GHz
Good linearity (11 dBm IP3
at 1 GHz)
(out)
Unconditionally stable (K > 1.5).
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN DESCRIPTION
1V
S
2, 5 GND2
3RFout
4GND1
6RFin
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
I
s
S
S
2
21
DC supply voltage 5 6 V
DC supply current 12.3 mA
insertion power gain f = 1 GHz 21.3 dB
NF noise figure f = 1 GHz 3.9 dB
P
L(sat)
saturated load power f = 1 GHz 4.8 dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
I
S
P
tot
T
stg
T
j
P
D
DC supply voltage RF input AC coupled 6V
supply current 35 mA
total power dissipation Ts 90 C 200 mW
storage temperature 65 +150 C
operating junction temperature 150 C
maximum drive power 10 dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Sep 10 2
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2712
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
CHARACTERISTICS
V
=5V; IS=12.3mA; Tj=25C; unless otherwise specified.
S
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
2
s
21
R
LIN
R
LOUT
2
s
12
NF noise figure f = 1 GHz 3.9 4.3 dB
BW bandwidth at s
K stability factor f = 1 GHz 1.5 2
P
L(sat)
P
L1dB
IP3
(in)
IP3
(out)
thermal resistance from junction to
P
= 200 mW; Ts 90 C300K/W
tot
solder point
supply current 9 12.3 15 mA
insertion power gain f = 100 M Hz 20 20.8 22 dB
f = 1 GHz 20 21.3 22 dB
f = 1.8 GHz 20 22 23 dB
f = 2.2 GHz 20 22 23 dB
f = 2.6 GHz 19 21.2 22 dB
f = 3 GHz 16 19.3 21 dB
return losses input f = 1 GHz 12 14 dB
f=2.2GHz 8 10 dB
return losses output f = 1 GHz 17 20 dB
f = 2.2 GHz 15 18 dB
isolation f = 1.6 GHz 31 33 dB
f = 2.2 GHz 36 39 dB
f=2.2GHz 4.3 4.7 dB
23 dB below flat gain at 1 GHz 2.8 3.2 GHz
21
f = 2.2 GHz 2.5 3
saturated load power f = 1 GHz 3 4.8 dBm
f=2.2GHz 0 1.3 dBm
load power at 1 dB gain compression; f = 1 GHz 20.2 dBm
at 1 dB gain compression; f = 2.2 GHz 4 2 dBm
input intercept point f = 1 GHz 12 10 dBm
f=2.2GHz 14 16 dBm
output intercept point f = 1 GHz 9 11 dBm
f=2.2GHz 4 6 dBm
2002 Sep 10 3
NXP Semiconductors Product specification
handbook, halfpage
MGU435
RF outRF in
C1
C2 C3
GND2GND1
V
s
V
s
RF input
RF output
Fig.2 Typical application circuit.
handbook, halfpage
DC-block
100 pF
DC-block
100 pF
DC-block
100 pF
input output
MGU437
Fig.3 Easy cascading application circuit.
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
MGU438
mixer
oscillator
wideband
amplifier
Fig.4 Application as IF amplifier.
handbook, halfpage
antenna
to IF circuit
or demodulator
MGU439
mixer
oscillator
LNA
wideband
amplifier
Fig.5 Application as RF amplifier.
handbook, halfpage
from modulation
or IF circuit
to power
amplifier
MGU440
mixer
oscillator
wideband
amplifier
Fig.6 Application as driver amplifier.
MMIC wideband amplifier BGA2712
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2712 MMIC. The device is internally matched to 50 ,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should not be more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be
located as closely as possible to the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
In Fig.6 the MMIC is used as a driver to the power ampli fier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
2002 Sep 10 4
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