Philips BGA2712 User Manual

DATA SH EET

DISCRETE SEMICONDUCTORS

MBD128

BGA2712

MMIC wideband amplifier

Product specification
Supersedes data of 2002 Jan 31

2002 Sep 10

NXP Semiconductors Product specification

MAM455

132

4

1

63

2, 54

56

Top view

Fig.1 Simplified outline (SOT363) and symbol.

Marking code: E2-.

MMIC wideband amplifier BGA2712

FEATURES

 Internally matched to 50 
 Wide frequency range (3.2GHz at 3 dB bandwidth)
 Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
 5 dBm saturated output power at 1 GHz

 Good linearity (11 dBm IP3

at 1 GHz)

(out)

 Unconditionally stable (K > 1.5).

APPLICATIONS

 LNB IF amplifiers
 Cable systems
 ISM
 General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.

PINNING

PIN DESCRIPTION

1V

S

2, 5 GND2

3RFout
4GND1
6RFin

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I
s

S

S

2



21

DC supply voltage 5 6 V
DC supply current 12.3  mA

insertion power gain f = 1 GHz 21.3  dB
NF noise figure f = 1 GHz 3.9  dB
P

L(sat)

saturated load power f = 1 GHz 4.8  dBm

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

tot

T

stg

T

j

P

D

DC supply voltage RF input AC coupled  6V

supply current  35 mA

total power dissipation Ts 90 C  200 mW

storage temperature 65 +150 C

operating junction temperature  150 C

maximum drive power  10 dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2002 Sep 10 2

NXP Semiconductors Product specification

MMIC wideband amplifier BGA2712

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

CHARACTERISTICS

V

=5V; IS=12.3mA; Tj=25C; unless otherwise specified.

S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

2



s

21

R

LIN

R

LOUT

2

s



12

NF noise figure f = 1 GHz  3.9 4.3 dB

BW bandwidth at s
K stability factor f = 1 GHz 1.5 2 

P

L(sat)

P

L1dB

IP3

(in)

IP3

(out)

thermal resistance from junction to

P

= 200 mW; Ts 90 C300K/W

tot

solder point

supply current 9 12.3 15 mA

insertion power gain f = 100 M Hz 20 20.8 22 dB

f = 1 GHz 20 21.3 22 dB
f = 1.8 GHz 20 22 23 dB
f = 2.2 GHz 20 22 23 dB
f = 2.6 GHz 19 21.2 22 dB
f = 3 GHz 16 19.3 21 dB

return losses input f = 1 GHz 12 14  dB

f=2.2GHz 8 10  dB

return losses output f = 1 GHz 17 20  dB

f = 2.2 GHz 15 18  dB

isolation f = 1.6 GHz 31 33  dB

f = 2.2 GHz 36 39  dB

f=2.2GHz  4.3 4.7 dB

23 dB below flat gain at 1 GHz 2.8 3.2  GHz

21

f = 2.2 GHz 2.5 3 

saturated load power f = 1 GHz 3 4.8  dBm

f=2.2GHz 0 1.3  dBm

load power at 1 dB gain compression; f = 1 GHz 20.2 dBm

at 1 dB gain compression; f = 2.2 GHz 4 2  dBm

input intercept point f = 1 GHz 12 10  dBm

f=2.2GHz 14 16  dBm

output intercept point f = 1 GHz 9 11  dBm

f=2.2GHz 4 6  dBm

2002 Sep 10 3

NXP Semiconductors Product specification

handbook, halfpage

MGU435

RF outRF in

C1

C2 C3

GND2GND1

V

s

V

s

RF input

RF output

Fig.2 Typical application circuit.

handbook, halfpage

DC-block

100 pF

DC-block

100 pF

DC-block

100 pF

input output

MGU437

Fig.3 Easy cascading application circuit.

handbook, halfpage

from RF

circuit

to IF circuit
or demodulator

MGU438

mixer

oscillator

wideband

amplifier

Fig.4 Application as IF amplifier.

handbook, halfpage

antenna

to IF circuit
or demodulator

MGU439

mixer

oscillator

LNA

wideband

amplifier

Fig.5 Application as RF amplifier.

handbook, halfpage

from modulation

or IF circuit

to power
amplifier

MGU440

mixer

oscillator

wideband

amplifier

Fig.6 Application as driver amplifier.

MMIC wideband amplifier BGA2712

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the
BGA2712 MMIC. The device is internally matched to 50 ,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should not be more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.

The 22 nF supply decoupling capacitor C1 should be
located as closely as possible to the MMIC.

Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.

Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.

The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).

In Fig.6 the MMIC is used as a driver to the power ampli fier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.

2002 Sep 10 4

NXP Semiconductors Product specification

handbook, full pagewidth

MLD904

0

0.2

0.6

0.4

0.8

1.0

1.0

+5

+2

+1

+0.5

+0.2

0

−0.2

−0.5

−1

−2

−5

0.2 0.5

4 GHz

100 MHz

2 5

180°

135°

90°

45°

0°

−45°

−90°

−135°

Fig.7 Input reflection coefficient (s11); typical values.

IS=12.3mA; VS=5V; PD= 30 dBm; ZO=50

handbook, full pagewidth

MLD905

0

0.2

0.6

0.4

0.8

1.0

1.0

+5

+2

+1

+0.5

+0.2

0

−0.2

−0.5

−1

−2

−5

0.2 0.5
100 MHz

2 5

180°

135°

90°

45°

0°

−45°

−90°

−135°

4 GHz

Fig.8 Output reflection coefficient (s22); typical values.

IS=12.3mA; VS=5V; PD= 30 dBm; ZO=50

MMIC wideband amplifier BGA2712

2002 Sep 10 5

NXP Semiconductors Product specification

handbook, halfpage

0 1000

f (MHz)

2000 4000

0

−50

−10

3000

−20

−30

−40

MLD906

s

12

2

(dB)

Fig.9 Isolation (s122) as a function of frequency;

typical values.

IS=12.3mA; VS=5V; PD= 30 dBm; ZO=50

handbook, halfpage

0

f (MHz)

(1)

(2)

(3)

25

20

15

10

1000 2000 4000

3000

MLD907

s

21

2

(dB)

Fig.10 Insertion gain (s212) as a function of

frequency; typical values.

PD= 30 dBm; ZO=50
(1) IS=15.1mA; VS=5.5V.
(2) IS=12.3mA; VS=5V.
(3) IS=10.1mA; VS=4.5V.

handbook, halfpage

−30 −20
PD (dBm)

P

L

(dBm)

0

(1)

(2)

(3)

10

5

−5

−10

0

−10

MLD908

Fig.11 Load power as a function of drive power at

1 GHz; typical values.

f=1GHz; ZO=50
(1) V

S

=5.5V.
(2) VS=5V.
(3) V

S

=4.5V.

handbook, halfpage

−30 −20
PD (dBm)

P

L

(dBm)

0

(1)
(2)

(3)

10

5

−5

−10

0

−10

MLD909

Fig.12 Load power as a function of drive power at

2.2 GHz; typical values.

f=2.2GHz; ZO=50
(1) V

S

=5.5V.
(2) VS=5V.
(3) V

S

=4.5V.

MMIC wideband amplifier BGA2712

2002 Sep 10 6

NXP Semiconductors Product specification

handbook, halfpage

0

(1)

(3) (2)

1000 2000

f (MHz)

NF

(dB)

3000

6

5

3

2

4

MLD902

Fig.13 Noise figure as a function of frequency;

typical values.

ZO=50
(1) IS=15.1mA; VS=5.5V.
(2) IS=12.3mA; VS=5V.
(3) IS=10.1mA; VS=4.5V.

handbook, halfpage

0

f (MHz)

K

1000 2000 4000

10

0

8

3000

6

4

2

MLD903

Fig.14 Stability factor as a function of frequency;

typical values.

IS=12.3mA; VS=5V; ZO=50

MMIC wideband amplifier BGA2712

2002 Sep 10 7

2002 Sep 10 8

Scattering parameters

=5V; IS=12.3mA; PD= 30 d Bm; ZO=50; T

V

S

amb

NXP Semiconductors Product specification

MMIC wideband amplifier BGA2712

=25C;

f (MHz)

s

MAGNITUDE

(ratio)

11

ANGLE

(deg)

MAGNITUDE

(ratio)

s

21

ANGLE

(deg)

s

MAGNITUDE

(ratio)

12

ANGLE

(deg)

s

MAGNITUDE

(ratio)

22

ANGLE

(deg)

FACTOR

100 0.04752 13.48 10.9826 1.753 0.03355 2.342 0.07706 170.0 1.5
200 0.05643 22.73 11.0172 6.898 0.03308 7.340 0.07237 164.8 1.5
400 0.09546 39.62 11.0842 15.64 0.03111 15.47 0.07314 130.7 1.6
600 0.13547 37.16 11.1812 24.08 0.02829 21.84 0.07471 101.8 1.7

800 0.17466 32.62 11.3239 32.64 0.02501 26.57 0.08218 72.30 1.9
1000 0.20739 27.40 11.5760 41.38 0.02145 30.44 0.10113 47.04 2.0
1200 0.24036 23.23 11.8439 50.97 0.01788 31.20 0.11792 25.82 2.3
1400 0.26469 18.36 12.1222 61.14 0.01489 28.60 0.13314 10.96 2.6
1600 0.29368 13.54 12.3892 72.07 0.01262 22.41 0.14376 1.624 3.0
1800 0.31261 8.127 12.5808 83.89 0.01132 12.86 0.14606 13.51 3.2
2000 0.31986 1.984 12.6359 96.79 0.01102 2.369 0.13749 24.90 3.2
2200 0.32544 4.878 12.4802 110.7 0.01151 5.585 0.11928 37.21 3.1
2400 0.31554 13.05 12.2649 125.2 0.01238 9.990 0.08992 51.50 3.0
2600 0.29374 21.53 11.5087 139.8 0.01322 11.44 0.05626 68.53
2800 0.26599 28.39 10.4126 152.8 0.01362 10.70 0.02424 110.2 3.3
3000 0.21222 31.80 9.17830 163.8 0.01335 9.622 0.02731 159.1 4.0
3200 0.17076 31.52 8.12024 171.0 0.01239 10.22 0.04752 135.0 4.9
3400 0.14479 32.14 7.38827 176.5 0.01150 15.36 0.06279 132.1 5.8
3600 0.11730 35.25 6.96284 177.3 0.01108 19.97 0.07643 142.1 6.4
3800 0.08946 46.06 6.62125 171.3 0.01 107 27.62 0.09760 153.5 6.7
4000 0.06606 64.65 6.32249 165.6 0.01 178 34.46 0.12925 160.6 6.6

K-

3.1

NXP Semiconductors Product specification

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

b

p

D

e

1

e

pin 1
index

A

A

1

L

p

Q

detail X

H

E

E

v M

A

AB

y

0 1 2 mm

scale

c

X

132

456

Plastic surface-mounted package; 6 leads SOT363

UNIT

A

1

max

b

p

cD

E

e

1

H

E

L

p

Qywv

mm

0.1

0.30

0.20

2.2

1.8

0.25

0.10

1.35

1.15

0.65

e

1.3

2.2

2.0

0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.25

0.15

A

1.1

0.8

04-11-08
06-03-16

MMIC wideband amplifier BGA2712

PACKAGE OUTLINE

2002 Sep 10 9

NXP Semiconductors Product specification

MMIC wideband amplifier BGA2712

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Develo pme nt This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the produc t specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DEFINITIONS
Product specification  The information and data

provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.

DISCLAIMERS
Limited warranty and liability  Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.

In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.

Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication he reof.

Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications wher e failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inc l usion and/or use is at
the customer’s own risk.

Applications  Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.

2002 Sep 10 10

NXP Semiconductors Product specification

MMIC wideband amplifier BGA2712

NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.

Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In cas e an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.

Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data  The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with auto motive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.

In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from cus tom er d esign and use o f
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights .

2002 Sep 10 11

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]

© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or cont ra ct, is believed to be accurate and reliable and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R77/02/pp12 Date of release: 2002 Sep 10