Philips BGA2709 Technical data

BGA2709

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

MBD128

BGA2709

MMIC wideband amplifier

Product specification			2002 Aug 06
Supersedes data of 2002 Feb 05

Philips Semiconductors	Product specification
MMIC wideband amplifier	BGA2709

FEATURES

∙Internally matched to 50 Ω

∙Very wide frequency range (3.6 GHz at 3 dB bandwidth)

∙Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)

∙12.5 dBm saturated output power at 1 GHz

∙High linearity (22 dBm OIP3 at 1 GHz)

∙Unconditionally stable (K > 1.2).

APPLICATIONS

∙Cable systems

∙LNB IF amplifiers

∙General purpose

∙ISM.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.

QUICK REFERENCE DATA

PINNING

PIN						DESCRIPTION
1			VS
2, 5			GND2
3			RF out
4			GND1
6			RF in
6			5	4		1
						6											3
						4									2, 5
1			2	3
Top view						MAM455

Marking code: E3-.

Fig.1 Simplified outline (SOT363) and symbol.

SYMBOL	PARAMETER		CONDITIONS	TYP.		MAX.	UNIT
VS	DC supply voltage			5	6		V
IS	DC supply current			23.5	−		mA
|s21|2	insertion power gain	f = 1 GHz		22.7	−		dB
NF	noise figure	f = 1 GHz		4	−		dB
PL(sat)	saturated load power	f = 1 GHz		12.5	−		dBm

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VS	DC supply voltage	RF input AC coupled	−	6	V
IS	supply current		−	35	mA
Ptot	total power dissipation	Ts ≤ 90 °C	−	200	mW
Tstg	storage temperature		−65	+150	°C
Tj	operating junction temperature		−	150	°C
PD	maximum drive power		−	10	dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2002 Aug 06

2

Philips Semiconductors			Product specification
MMIC wideband amplifier			BGA2709
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-s	thermal resistance from junction to solder	Ptot = 200 mW; Ts ≤ 90 °C	300	K/W
	point

CHARACTERISTICS

VS = 5 V; IS = 23.5 mA; Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
IS	supply current		19	23.5	32	mA
|s21|2	insertion power gain	f = 100 MHz	21	22.2	23	dB
		f = 1 GHz	21	22.7	24	dB
		f = 1.8 GHz	22	23.0	24	dB
		f = 2.2 GHz	21	23.0	24	dB
		f = 2.6 GHz	20	22.1	23	dB
		f = 3 GHz	18	21.1	22	dB
RL IN	return losses input	f = 1 GHz	9	11	−	dB
		f = 2.2 GHz	9	11	−	dB
RL OUT	return losses output	f = 1 GHz	17	20	−	dB
		f = 2.2 GHz	20	24	−	dB
|s12|2	isolation	f = 1.6 GHz	31	33	−	dB
		f = 2.2 GHz	34	36	−	dB
NF	noise figure	f = 1 GHz	−	4.0	4.4	dB
		f = 2.2 GHz	−	4.4	4.9	dB
BW	bandwidth	at |s21|2 −3 dB below flat gain at 1 GHz	3.1	3.6	−	GHz
K	stability factor	f = 1 GHz	1.3	1.7	−	−
		f = 2 GHz	1.8	2.2	−	−
PL(sat)	saturated load power	f = 1 GHz	11	12.5	−	dBm
		f = 2.2 GHz	5	7.5	−	dBm
PL 1 dB	load power	at 1 dB gain compression; f = 1 GHz	7	8.3	−	dBm
		at 1 dB gain compression; f = 2.2 GHz	3	5.4	−	dBm
IP3(in)	input intercept point	f = 1 GHz	−3	−1	−	dBm
		f = 2.2 GHz	−7	−9	−	dBm
IP3(out)	output intercept point	f = 1 GHz	20	22	−	dBm
		f = 2.2 GHz	12	14	−	dBm

2002 Aug 06

3

Philips Semiconductors	Product specification
MMIC wideband amplifier	BGA2709

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the BGA2709 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2, C3 should be not more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased.

The nominal value of the RF choke, L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value must be used (e.g. 10 nH) to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen.

Both the RF choke, L1 and the 22 nF supply decoupling capacitor, C1 should be located as closely as possible to the MMIC.

Separate paths must be used for the ground planes of the ground pins GND1, GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance.

handbook,V halfpage

s

C1

Vs

L1

RF input

RF in

RF out

RF output

C2

C3

GND1

GND2

MGU436

Fig.2 Typical application circuit.

Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2.

The excellent wideband characteristics of the MMIC make it and ideal building block in IF amplifier applications such as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5).

In Fig.6 the MMIC is used as a driver to the power amplifier in part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications.

DC-block

DC-block

DC-block

handbook, halfpage

100 pF

100 pF

100 pF

input

output

MGU437

Fig.3 Simple cascade circuit.

handbook, halfpage	mixer
		to IF circuit
from RF
circuit		or demodulator
	wideband
	amplifier	MGU438
	oscillator

Fig.4 IF amplifier application.

handbook, halfpage		mixer
		to IF circuit
antenna
		or demodulator
LNA	wideband
	amplifier	MGU439
	oscillator

Fig.5 RF amplifier application.

mixer

handbook, halfpage	to power
from modulation
or IF circuit	amplifier
wideband
amplifier	MGU440
oscillator

Fig.6 Power amplifier driver application.

2002 Aug 06

4