Philips bga2022 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SHEET

ook, halfpage

MBD128

BGA2022

MMIC mixer

Preliminary specification 2000 May 05

Philips Semiconductors Preliminary specification

MMIC mixer BGA2022

FEATURES

• Large frequency range:
– Cellular band (900 MHz)
– PCS band (1900 MHz)
– WLAN band (2.4 GHz).

• High isolation

• High linearity

• High conversion gain.

APPLICATIONS

Receiver side of wireless systems that require high
conversion gain and high linearity at low supply current,
such as CDMA.

DESCRIPTION

Silicon double poly MMIC mixer in a 6-lead plastic SOT363
package.

PINNING

PIN DESCRIPTION

1LO - GND
2 LO - signal
3V

S

4IF - out
5 RF - feedback
6 RF - signal

654

`

Bias

control

RF - signal (6)

123

Top view

MSA370

Fig.1 Simplified outline (SOT363) and symbol.

IF (4)LO - GND (1)

LO (2)

RF-feedback (5)

QUICK REFERENCE DATA

V

= 2.8V; IS=6mA; PLO=0dBm; fRF=1800MHz; fLO=2080MHz; fIF=280MHz.

S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

conv

conversion gain 4 6 8 dB
NF noise figure (DSB) − 12 − dB
IP

3

output third order intercept point − 7 − dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2000 May 05 2

Philips Semiconductors Preliminary specification

MMIC mixer BGA2022

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

LO

P

RF

P

tot

T

stg

T

j

Notes

1. LO and RF signals always AC coupled; 50 Ω source; no external DC voltage supplied to pin 1, 2 and 6.

2. T

is the temperature at the soldering point of the ground tab.

s

supply voltage − 4V

supply current − 10 mA

oscillator power note 1 − 10 dBm

RF power note 1 − 10 dBm

total power dissipation Ts≤ 100 °C; note 2 − 40 mW

storage temperature −65 +150 °C

junction temperature − 150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to solder point 375 K/W

CHARACTERISTICS

V

= 2.8 V; IS=6mA; Tj=25°C; see application report nr.: ; unless otherwise specified.

S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

G

conv(p)

supply current VS=2.92V 468mA
power conversion gain PRF= −25 dBm; PLO=0dBm

880 MHz − 5 − dB
1800 MHz 468dB
1950 MHz − 5 − dB
2450 MHz − 6 − dB

NF noise figure DSB

880 MHz − 9 − dB
1800 MHz − 12 − dB
1950 MHz − 9 − dB
2450 MHz − 9 − dB

IP

3

intercept point third order input output refered

880 MHz − 4 − dBm
1800 MHz − 7 − dBm
1950 MHz − 7 − dBm
2450 MHz − 10 − dBm

VSWR

LO

return losses at LO port PLO=0dBm; f=0to3GHz −−2:1

2000 May 05 3