Philips BGA2003 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D124
BGA2003
Silicon MMIC amplifier
Product specification
Supersedes data of 1999 Feb 25
1999 Jul 23
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
FEATURES
• Low current
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicontransistorwithintegratedbiasingforlowvoltage
applications in a plastic, 4-pin SOT343R package.
PINNING
PIN DESCRIPTION
1 GND
2 RF in
3 CTRL (bias current control)
4V
handbook, halfpage
21
Top view
Marking code: A3.
+ RF out
S
43
MAM427
CTRL
BIAS
CIRCUIT
RFin GND
Fig.1 Simplified outline (SOT343R) and symbol.
VS+RFout
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
I
S
DC supply voltage RF input AC coupled − 4.5 V
DC supply current V
VS-OUT
= 2.5 V; I
CTRL
= 1 mA;
11 − mA
RF input AC coupled
MSG maximum stable gain V
NF noise figure V
VS-OUT
T
amb
VS-OUT
= 2.5 V; f = 1800 MHz;
=25°C
= 2.5 V; f = 1800 MHz; ΓS= Γ
16 − dB
1.8 − dB
opt
1999 Jul 23 2
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
CTRL
I
S
I
CTRL
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
supply voltage RF input AC coupled − 4.5 V
voltage on control pin − 2V
supply current (DC) forced by DC voltage on RF input
or I
CTRL
− 30 mA
control current − 3mA
total power dissipation Ts≤ 100 °C − 135 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C
thermal resistance from junction to soldering point 350 K/W
CHARACTERISTICS
RF input AC coupled; T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current V
MSG maximum stable gain V
V
VS-OUT
VS-OUT
VS-OUT
= 2.5 V; I
= 2.5 V; I
= 2.5 V; I
= 0.4 mA 3 4.5 6 mA
CTRL
= 1.0 mA 8 11 15 mA
CTRL
VS-OUT
= 10 mA;
− 24 − dB
f = 900 MHz
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
− 16 − dB
f = 1800 MHz
2
|s
|
21
insertion power gain V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
18 19 − dB
f = 900 MHz
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
13 14 − dB
f = 1800 MHz
s
12
isolation V
VS-OUT
= 2.5 V; I
VS-OUT
=0;
− 26 − dB
f = 900 MHz
V
VS-OUT
= 2.5 V; I
VS-OUT
=0;
− 20 − dB
f = 1800 MHz
NF noise figure V
IP3
(in)
input intercept point; note 1 V
= 2.5 V; I
VS-OUT
f = 900 MHz; ΓS= Γ
V
VS-OUT
= 2.5 V; I
f = 1800 MHz; ΓS= Γ
= 2.3 V; I
VS-OUT
VS-OUT
opt
VS-OUT
opt
VS-OUT
= 10 mA;
= 10 mA;
= 3.6 mA;
− 1.8 2 dB
− 1.8 2 dB
−−6.5 − dBm
f = 900 MHz
V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.5 mA;
−−4.8 − dBm
f = 1800 MHz
Note
1. See application note RNR-T45-99-B-0514.
1999 Jul 23 3
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
handbook, halfpage
V
CTRL
100 pF
R
CTRL
BGA2003
2
C
RF in
R1
L1
C
43
1
MGS536
Fig.2 Typical application circuit.
V
S
RF out
200
handbook, halfpage
P
tot
(mW)
150
100
50
0
0 50 100 200
150
Fig.3 Power derating.
Ts (
MGS537
°C)
1.5
V
CTRL
MGS538
(V)
2.5
handbook, halfpage
I
CTRL
(mA)
2
1.5
1
0.5
0
0 0.5 1 2
I
=(V
CTRL
CTRL
− 0.83)/296.
Fig.4 Control current as a function of the control
voltage on pin 3; typical values.
1999 Jul 23 4
CTRL
MGS539
(mA)
30
handbook, halfpage
I
VS-OUT
(mA)
20
10
0
0 2.5
V
= 2.5 V.
S-OUT
0.5 1 1.5 2
I
Fig.5 Bias current as a function of the control
current; typical values.
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