Philips BGA2003 User Manual

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D124
BGA2003
Silicon MMIC amplifier
Product specification Supersedes data of 1999 Feb 25
1999 Jul 23
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003

FEATURES

Low current
Very high power gain
Low noise figure
Integrated temperature compensated biasing
Control pin for adjustment bias current
Supply and RF output pin combined.

APPLICATIONS

RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Low noise amplifiers
Satellite television tuners (SATV)
High frequency oscillators.

DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double polysilicontransistorwithintegratedbiasingforlowvoltage applications in a plastic, 4-pin SOT343R package.

PINNING

PIN DESCRIPTION
1 GND 2 RF in 3 CTRL (bias current control) 4V
handbook, halfpage
21
Top view
Marking code: A3.
+ RF out
S
43
MAM427
CTRL
BIAS
CIRCUIT
RFin GND
Fig.1 Simplified outline (SOT343R) and symbol.
VS+RFout

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
I
S
DC supply voltage RF input AC coupled 4.5 V DC supply current V
VS-OUT
= 2.5 V; I
CTRL
= 1 mA;
11 mA
RF input AC coupled
MSG maximum stable gain V
NF noise figure V
VS-OUT
T
amb VS-OUT
= 2.5 V; f = 1800 MHz;
=25°C
= 2.5 V; f = 1800 MHz; ΓS= Γ
16 dB
1.8 dB
opt
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
CTRL
I
S
I
CTRL
P
tot
T
stg
T
j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT
R
th j-s
supply voltage RF input AC coupled 4.5 V voltage on control pin 2V supply current (DC) forced by DC voltage on RF input
or I
CTRL
30 mA
control current 3mA total power dissipation Ts≤ 100 °C 135 mW storage temperature 65 +150 °C operating junction temperature 150 °C
thermal resistance from junction to soldering point 350 K/W

CHARACTERISTICS

RF input AC coupled; T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current V
MSG maximum stable gain V
V
VS-OUT VS-OUT VS-OUT
= 2.5 V; I = 2.5 V; I = 2.5 V; I
= 0.4 mA 3 4.5 6 mA
CTRL
= 1.0 mA 8 11 15 mA
CTRL VS-OUT
= 10 mA;
24 dB
f = 900 MHz V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
16 dB
f = 1800 MHz
2
|s
|
21
insertion power gain V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
18 19 dB
f = 900 MHz V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
13 14 dB
f = 1800 MHz
s
12
isolation V
VS-OUT
= 2.5 V; I
VS-OUT
=0;
26 dB
f = 900 MHz V
VS-OUT
= 2.5 V; I
VS-OUT
=0;
20 dB
f = 1800 MHz
NF noise figure V
IP3
(in)
input intercept point; note 1 V
= 2.5 V; I
VS-OUT
f = 900 MHz; ΓS= Γ V
VS-OUT
= 2.5 V; I
f = 1800 MHz; ΓS= Γ
= 2.3 V; I
VS-OUT
VS-OUT
opt
VS-OUT
opt
VS-OUT
= 10 mA;
= 10 mA;
= 3.6 mA;
1.8 2 dB
1.8 2 dB
−−6.5 dBm
f = 900 MHz V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.5 mA;
−−4.8 dBm
f = 1800 MHz
Note
1. See application note RNR-T45-99-B-0514.
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
handbook, halfpage
V
CTRL
100 pF
R
CTRL
BGA2003
2
C
RF in
R1
L1
C
43
1
MGS536
Fig.2 Typical application circuit.
V
S
RF out
200
handbook, halfpage
P
tot
(mW)
150
100
50
0
0 50 100 200
150
Fig.3 Power derating.
Ts (
MGS537
°C)
1.5 V
CTRL
MGS538
(V)
2.5
handbook, halfpage
I
CTRL (mA)
2
1.5
1
0.5
0
0 0.5 1 2
I
=(V
CTRL
CTRL
0.83)/296.
Fig.4 Control current as a function of the control
voltage on pin 3; typical values.
CTRL
MGS539
(mA)
30
handbook, halfpage
I
VS-OUT
(mA)
20
10
0
0 2.5
V
= 2.5 V.
S-OUT
0.5 1 1.5 2 I
Fig.5 Bias current as a function of the control
current; typical values.
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
30
handbook, halfpage
I
VS-OUT
(mA)
25
20
15
10
5
0
40 0 40 120
V
= 2.5 V.
S-OUT
(1) I (2) I (3) I
CTRL CTRL CTRL
= 0.2 mA. = 0.4 mA. = 1.0 mA.
Fig.6 Bias current (I
ambient temperature with I parameter; typical values.
(4) I (5) I (6) I
= 1.5 mA.
CTRL
= 2.0 mA.
CTRL
= 2.5 mA.
CTRL
) as a function of the
VS-OUT
80
CTRL
T
amb
as
MGS540
(6)
(5)
(4)
(3)
(2) (1)
°C)
(
20
handbook, halfpage
I
VS-OUT
(mA)
15
10
5
0
I
CTRL
0
= 1 mA.
15
Fig.7 Bias current (I
voltage at the output pin (V values.
MGS541
234
VS-OUT
V
VS-OUT
(V)
) as a function of the
); typical
VS-OUT
I
VS-OUT
MGS542
30
(mA)
25
handbook, halfpage
f
T
(GHz)
20
15
10
5
0
01020
V
= 2.5 V; f = 1000 MHz.
VS-OUT
Fig.8 Transition frequency as a function of the
bias current (I
); typical values.
VS-OUT
30
handbook, halfpage
gain (dB)
25
20
15
10
5
0
0101525
V
= 2.5 V; f = 900 MHz.
VS-OUT
MSG
G
UM
5
I
VS-OUT
20
Fig.9 Gain as a function of the bias current
(I
); typical values.
VS-OUT
MGS543
G
max
(mA)
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
25
handbook, halfpage
gain (dB)
20
G
max
15
G
UM
10
5
0
0101525
V
= 2.5 V; f = 1800 MHz.
VS-OUT
5 20
I
VS-OUT
Fig.10 Gain as a function of the bias current
(I
); typical values.
VS-OUT
MGS544
(mA)
40
handbook, halfpage
gain (dB)
MSG
30
G
UM
= 10 mA.
G
max
3
10
f (MHz)
V
VS-OUT
20
10
0
10
2
= 2.5 V; I
VS-OUT
Fig.11 Gain as a function of frequency; typical
values.
MGS545
4
10
(mA)
MGS546
2
handbook, halfpage
3
NF
min
(dB)
2.5
2
1.5
1
0.5
0
11010
(1) f = 2400 MHz. (2) f = 1800 MHz. (3) f = 1000 MHz. (4) f = 900 MHz.
(1) (3)
(2) (4)
I
VS-OUT
Fig.12 Minimum noise figure as a function of the
bias current (I
); typical values.
VS-OUT
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
handbook, full pagewidth
°
unstable region
source
135°
+0.5
90
+1
1.0
45°
+2
(1)
unstable
region load
0.8
0.6
f = 900 MHz; V I
VS-OUT
VS-OUT
= 10 mA; Zo=50Ω. (1) G = 23 dB. (2) G = 22 dB. (3) G =21 dB. (4) NF = 1.8 dB. (5) NF = 2 dB. (6) NF = 2.2 dB.
handbook, full pagewidth
= 2.5 V;
(2)
(3)
2
5
2
180
+0.2
Γopt
°
0.2 1
0
0.2
0.5
(4)
(5)
(6)
0.5
135°
1
90°
Fig.13 Noise, stability and gain circles; typical values.
(1)
Γopt
90°
+1
(2)
1
(4)
(3)
+2
2
unstable region
source
135°
+0.2
180°
0
+0.5
0.2 0.5
+5
5
45°
MGS547
unstable
region load
45°
+5
5
0.4
0.2
0°
0
1.0
1.0
0.8
0.6
0.4
0.2
0°
0
f = 1800 MHz; V
= 10 mA; Zo=50Ω.
I
VS-OUT
(1) G
max
= 16.1 dB.
VS-OUT
= 2.5 V;
0.2
(2) G = 16 dB. (3) G = 15 dB. (4) G = 14 dB. (5) NF = 1.9 dB.
135°
0.5
(6) NF = 2.1 dB. (7) NF = 2.3 dB.
Fig.14 Noise, stability and gain circles; typical values.
(5)
(6)
1
90°
5
(7)
2
45°
1.0
MGS548
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
handbook, full pagewidth
V
= 2.5 V; I
VS-OUT
= 10 mA; Zo=50Ω.
VS-OUT
Fig.15 Common emitter input reflection coefficient (s11); typical values.
180°
135°
+0.5
+0.2
0.2 0.5 1
0
0.2
135°
0.5
3 GHz
90°
+1
1
90°
2 GHz
500 MHz
2
1 GHz
+2
5
100 MHz
200 MHz
2
45°
45°
+5
5
MGS549
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
handbook, full pagewidth
V
= 2.5 V; I
VS-OUT
90°
45°
0°
45°
MGS550
= 10 mA; Zo=50Ω.
VS-OUT
135°
200 MHz
100 MHz
20 16 12 8 4
°
180
135°
500 MHz
900 MHz
1 GHz
1.8 GHz
3 GHz
90°
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003
handbook, full pagewidth
V
= 2.5 V; I
VS-OUT
90°
45°
0°
45°
MGS551
= 10 mA; Zo=50Ω.
VS-OUT
135°
0.5 0.4 0.3 0.2 0.1
180
°
135°
3 GHz
100 MHz
90°
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
V
= 2.5 V; I
VS-OUT
90°
+1
= 10 mA; Zo=50Ω.
VS-OUT
180°
135°
+0.5
+0.2
0.2 0.5 1
0
0.2
135°
0.5
3 GHz
1
90°
2
1 GHz
1.8 GHz
+2
5
100 MHz
900 MHz
500 MHz
2
45°
+5
5
45°
Fig.18 Common emitter output reflection coefficient (s22); typical values.
200 MHz
MGS552
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003

PACKAGE OUTLINE

Plastic surface mounted package; reverse pinning; 4 leads SOT343R
w M
D
y
e
43
21
b
B
p
e
b
1
1
E
H
E
A
A
1
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
OUTLINE VERSION

SOT343R

A
1.1
0.8
max
0.1
1
b
p
0.4
0.3
IEC JEDEC EIAJ
b
1
0.7
0.5
cD
0.25
2.2
0.10
1.8
REFERENCES
E
1.35
1.15
e
1.3
1999 Jul 23 10
H
L
e
E
1
2.2
0.45
2.0
0.15
Qwv
p
0.23
0.13
0.2y0.10.21.15
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2003

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jul 23 11
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
1999
Internet: http://www.semiconductors.philips.com
67
SCA
Printed in The Netherlands 125006/04/pp12 Date of release:1999 Jul 23 Document order number: 9397 750 06134
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