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DISCRETE SEMICONDUCTORS
DATA SH EET
M3D124
BGA2001
Silicon MMIC amplifier
Product specification
Supersedes data of 1999 Jul 23
1999 Aug 11
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Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2001
FEATURES
• Low current, low voltage
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Supply and RF output pin combined.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicontransistorwithintegratedbiasingforlowvoltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
PIN DESCRIPTION
1 GND
2 RF in
3 GND
4V
handbook, halfpage
21
Top view
Marking code: A1.
+ RFout
S
43
MAM430
BIAS
CIRCUIT
RFin GND
Fig.1 Simplified outline (SOT343R) and symbol.
VS+RFout
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
I
S
MSG maximum stable gain V
NF noise figure V
DC supply voltage RF input AC coupled − 4.5 V
DC supply current V
T
= 2.5 V; RF input AC coupled 4.5 − mA
VS-OUT
= 2.5 V; f = 1.8 GHz;
VS-OUT
=25°C
amb
= 2.5 V; f = 1.8 GHz; ΓS= Γ
VS-OUT
19.5 − dB
1.3 − dB
opt
1999 Aug 11 2
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Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2001
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
I
S
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
CHARACTERISTICS
RF input AC coupled; T
supply voltage RF input AC coupled − 4.5 V
supply current (DC) forced by DC voltage on RF input − 30 mA
total power dissipation Ts≤ 100 °C − 135 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C
thermal resistance from junction to soldering point 350 K/W
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current V
MSG maximum stable gain V
2
|s
|
21
P
L
insertion power gain V
load power at 1 dB gaincompression point;
NF noise figure V
IP3
(in)
input intercept point; note 1 V
V
V
I
VS-OUT
V
I
VS-OUT
I
VS-OUT
V
I
VS-OUT
V
I
VS-OUT
I
VS-OUT
ΓS= Γ
V
I
VS-OUT
ΓS= Γ
I
VS-OUT
V
I
VS-OUT
=1V − 0.7 − mA
VS-OUT
= 2.5 V 3 4.5 6 mA
VS-OUT
= 4.5 V − 11 − mA
VS-OUT
VS-OUT
= 2.5 V;
− 22 − dB
= 4 mA; f = 900 MHz
VS-OUT
= 2.5 V;
− 19.5 − dB
= 4 mA; f = 1.8 GHz
VS-OUT
= 2.5 V;
− 18 − dB
= 4 mA; f = 900 MHz
VS-OUT
= 2.5 V;
− 14 − dB
= 4 mA; f = 1.8 GHz
−−2−dBm
= 2.5 V;
VS-OUT
= 4.4 mA; f = 900 MHz;
VS-OUT
= 2.5 V;
− 1.3 − dB
= 4 mA; f = 900 MHz;
opt
VS-OUT
= 2.5 V;
− 1.3 − dB
= 4 mA; f = 1.8 GHz;
opt
VS-OUT
= 2.5 V;
−−7.4 − dBm
= 4.4 mA; f = 900 MHz
VS-OUT
= 2.5 V;
−−4.5 − dBm
= 4.5 mA;
f = 1800 MHz
Note
1. See application note: RNR-T45-99-B-0513.
1999 Aug 11 3
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Philips Semiconductors Product specification
Silicon MMIC amplifier BGA2001
handbook, halfpage
12
handbook, halfpage
I
VS-OUT
(mA)
10
8
6
100 pF
GND
BGA2001
IN
C
RF in
L1
V
S-OUT
GND
MGS605
R1
V
C
RF out
Fig.2 Typical application circuit.
S
MGS607
(8)
(7)
(6)
(5)
200
handbook, halfpage
P
tot
(mW)
150
100
50
0
0 50 100 200
16
handbook, halfpage
I
VS-OUT
(mA)
12
8
150
Ts (
Fig.3 Power derating curve.
MGS606
°C)
MGS608
80
T
amb
VS-OUT
(4)
(3)
(2)
(1)
°C)
(
as
4
2
0
−40 0 40 120
(1) V
(2) V
(3) V
(4) V
Fig.4 Bias current (I
VS-OUT
VS-OUT
VS-OUT
VS-OUT
=1V
= 1.5 V
=2V
= 2.5 V
(5) V
(6) V
(7) V
(8) V
=3V
VS-OUT
= 3.5 V
VS-OUT
=4V
VS-OUT
= 4.5 V.
VS-OUT
) as a function of
VS-OUT
ambient temperature with V
parameter; typical values.
1999 Aug 11 4
4
0
0
15
Fig.5 Bias current (I
voltage at the output pin (V
typical values.
234
VS-OUT
V
VS-OUT
(V)
) as a function of
);
VS-OUT