Philips bga2001 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D124

BGA2001

Silicon MMIC amplifier

Product specification
Supersedes data of 1999 Jul 23

1999 Aug 11

Philips Semiconductors Product specification

Silicon MMIC amplifier BGA2001

FEATURES

• Low current, low voltage

• Very high power gain

• Low noise figure

• Integrated temperature compensated biasing

• Supply and RF output pin combined.

APPLICATIONS

• RF front end

• Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

• Radar detectors

• Low noise amplifiers

• Satellite television tuners (SATV)

• High frequency oscillators.

DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double
polysilicontransistorwithintegratedbiasingforlowvoltage
applications in a plastic, 4-pin dual-emitter SOT343R
package.

PINNING

PIN DESCRIPTION

1 GND
2 RF in
3 GND
4V

handbook, halfpage

21

Top view

Marking code: A1.

+ RFout

S

43

MAM430

BIAS

CIRCUIT

RFin GND

Fig.1 Simplified outline (SOT343R) and symbol.

VS+RFout

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

S

I

S

MSG maximum stable gain V

NF noise figure V

DC supply voltage RF input AC coupled − 4.5 V
DC supply current V

T

= 2.5 V; RF input AC coupled 4.5 − mA

VS-OUT

= 2.5 V; f = 1.8 GHz;

VS-OUT

=25°C

amb

= 2.5 V; f = 1.8 GHz; ΓS= Γ

VS-OUT

19.5 − dB

1.3 − dB

opt

1999 Aug 11 2

Philips Semiconductors Product specification

Silicon MMIC amplifier BGA2001

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

CHARACTERISTICS

RF input AC coupled; T

supply voltage RF input AC coupled − 4.5 V
supply current (DC) forced by DC voltage on RF input − 30 mA
total power dissipation Ts≤ 100 °C − 135 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C

thermal resistance from junction to soldering point 350 K/W

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

supply current V

MSG maximum stable gain V

2

|s

|

21

P

L

insertion power gain V

load power at 1 dB gaincompression point;

NF noise figure V

IP3

(in)

input intercept point; note 1 V

V
V

I

VS-OUT

V
I

VS-OUT

I

VS-OUT

V
I

VS-OUT

V
I

VS-OUT

I

VS-OUT

ΓS= Γ

V
I

VS-OUT

ΓS= Γ

I

VS-OUT

V
I

VS-OUT

=1V − 0.7 − mA

VS-OUT

= 2.5 V 3 4.5 6 mA

VS-OUT

= 4.5 V − 11 − mA

VS-OUT
VS-OUT

= 2.5 V;

− 22 − dB

= 4 mA; f = 900 MHz

VS-OUT

= 2.5 V;

− 19.5 − dB

= 4 mA; f = 1.8 GHz

VS-OUT

= 2.5 V;

− 18 − dB

= 4 mA; f = 900 MHz

VS-OUT

= 2.5 V;

− 14 − dB

= 4 mA; f = 1.8 GHz

−−2−dBm

= 2.5 V;

VS-OUT

= 4.4 mA; f = 900 MHz;

VS-OUT

= 2.5 V;

− 1.3 − dB

= 4 mA; f = 900 MHz;

opt

VS-OUT

= 2.5 V;

− 1.3 − dB

= 4 mA; f = 1.8 GHz;

opt

VS-OUT

= 2.5 V;

−−7.4 − dBm

= 4.4 mA; f = 900 MHz

VS-OUT

= 2.5 V;

−−4.5 − dBm

= 4.5 mA;

f = 1800 MHz

Note

1. See application note: RNR-T45-99-B-0513.

1999 Aug 11 3

Philips Semiconductors Product specification

Silicon MMIC amplifier BGA2001

handbook, halfpage

12

handbook, halfpage

I

VS-OUT

(mA)

10

8

6

100 pF

GND

BGA2001

IN

C

RF in

L1

V

S-OUT

GND

MGS605

R1

V

C

RF out

Fig.2 Typical application circuit.

S

MGS607

(8)

(7)

(6)

(5)

200

handbook, halfpage

P

tot

(mW)

150

100

50

0

0 50 100 200

16

handbook, halfpage

I

VS-OUT

(mA)

12

8

150

Ts (

Fig.3 Power derating curve.

MGS606

°C)

MGS608

80

T

amb

VS-OUT

(4)

(3)

(2)

(1)

°C)

(

as

4

2

0

−40 0 40 120

(1) V
(2) V
(3) V
(4) V

Fig.4 Bias current (I

VS-OUT
VS-OUT
VS-OUT
VS-OUT

=1V
= 1.5 V
=2V
= 2.5 V

(5) V
(6) V
(7) V
(8) V

=3V

VS-OUT

= 3.5 V

VS-OUT

=4V

VS-OUT

= 4.5 V.

VS-OUT

) as a function of

VS-OUT

ambient temperature with V
parameter; typical values.

1999 Aug 11 4

4

0

0

15

Fig.5 Bias current (I

voltage at the output pin (V
typical values.

234

VS-OUT

V

VS-OUT

(V)

) as a function of

);

VS-OUT