Philips bfy 51 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BFY50; BFY51; BFY52
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors Product specification
NPN medium power transistors BFY50; BFY51; BFY52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 35 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• General purpose industrial applications.
DESCRIPTION
handbook, halfpage
1
2
3
NPN medium power transistor in a TO-39 metal package.
2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BFY50 −−80 V
BFY51 −−60 V
BFY52 −−40 V
V
CEO
collector-emitter voltage open base
BFY50 −−35 V
BFY51 −−30 V
BFY52 −−20 V
I
CM
P
tot
h
FE
peak collector current −−1A
total power dissipation T
≤ 25 °C −−800 mW
amb
≤ 100 °C −−2.86 W
T
case
DC current gain IC= 150 mA; VCE=10V
BFY50 30 112 −
BFY51 40 123 −
BFY52 60 142 −
f
T
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz
BFY50 60 −−MHz
BFY51; BFY52 50 −−MHz
1997 Apr 22 2
Philips Semiconductors Product specification
NPN medium power transistors BFY50; BFY51; BFY52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BFY50 − 80 V
BFY51 − 60 V
BFY52 − 40 V
collector-emitter voltage open base
BFY50 − 35 V
BFY51 − 30 V
BFY52 − 20 V
emitter-base voltage open collector − 6V
collector current (DC) − 1A
peak collector current − 1A
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 800 mW
amb
≤ 25 °C − 5W
T
case
25 °C < T
< 100 °C − 2.86 W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 220 K/W
thermal resistance from junction to case 35 K/W
1997 Apr 22 3
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