Philips BFX85 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BFX85
NPN switching transistor
Product specification
Supersedes data of Sepember 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors Product specification
NPN switching transistor BFX85
FEATURES
• High current (max. 1 A)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• General purpose switching and amplification
• Industrial applications.
handbook, halfpage
DESCRIPTION
NPN transistor in a TO-39 metal package.
1
2
3
MAM317
3
2
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
t
off
collector-base voltage open emitter −−100 V
collector-emitter voltage open base −−60 V
collector current (DC) −−1A
total power dissipation T
≤ 25 °C −−800 mW
amb
≤ 100 °C −−2.86 W
T
case
DC current gain IC= 150 mA; VCE= 10 V 70 142 −
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 50 −−MHz
turn-off time I
= 150 mA; I
Con
= 15 mA; I
Bon
= −15 mA − 360 − ns
Boff
1997 Apr 22 2
Philips Semiconductors Product specification
NPN switching transistor BFX85
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 100 V
collector-emitter voltage open base − 60 V
emitter-base voltage open collector − 6V
collector current (DC) − 1A
peak collector current − 1A
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 800 mW
amb
≤ 25 °C − 5W
T
case
25° C ≤ T
≤ 100 °C − 2.86 W
case
storage temperature −65 +150 °C
junction temperature − 175 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 200 K/W
thermal resistance from junction to case 35 K/W
1997 Apr 22 3
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