![](/html/c9/c9f8/c9f82faddc4e5679a023a6dd8d8a46faacd2ba845f4710d467d4b526a9464d7d/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BFX34
NPN switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
![](/html/c9/c9f8/c9f82faddc4e5679a023a6dd8d8a46faacd2ba845f4710d467d4b526a9464d7d/bg2.png)
Philips Semiconductors Product specification
NPN switching transistor BFX34
FEATURES
• High current (max. 2 A)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High-current switching, e.g. inverters and switching
regulators.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a TO-39 metal package.
1
2
2
3
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
t
off
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 60 V
collector current (DC) − 2A
total power dissipation T
≤ 25 °C − 5W
case
DC current gain IC= 2 A; VCE= 2 V 40 150
transition frequency IC= 0.5 A; VCE= 5 V; f = 100 MHz 70 − MHz
turn-off time I
I
Con
Boff
= 5 A; I
= −0.5 A
Bon
= 0.5 A;
− 1.2 µs
3
1
1997 Apr 22 2
![](/html/c9/c9f8/c9f82faddc4e5679a023a6dd8d8a46faacd2ba845f4710d467d4b526a9464d7d/bg3.png)
Philips Semiconductors Product specification
NPN switching transistor BFX34
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 60 V
emitter-base voltage open collector − 6V
collector current (DC) − 2A
peak collector current − 5A
peak base current − 1.5 A
total power dissipation T
≤ 25 °C − 5W
case
≤ 25 °C − 0.87 W
T
amb
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 200 K/W
thermal resistance from junction to case 35 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
V
C
FE
CEsat
BEsat
c
collector cut-off current IE= 0; VCB=60V −−10 µA
emitter cut-off current IC= 0; VEB=4V −−10 µA
DC current gain IC= 1 A; VCE=2V − 130 −
= 1.5 A; VCE= 0.6 V − 60 −
I
C
= 2 A; VCE= 2 V 40 110 150
I
C
collector-emitter saturation voltage IC= 5 A; IB= 0.5 A − 0.77 1 V
base-emitter saturation voltage IC= 5 A; IB= 0.5 A − 1.43 1.8 V
collector capacitance IE=ie= 0; VCB=10V;
− 36 − pF
f = 1 MHz
C
e
emitter capacitance IC=ic= 0; VEB= 0.5 V;
− 440 − pF
f = 1 MHz
f
T
transition frequency IC= 0.5 A; VCE=5V;
70 100 − MHz
f = 100 MHz
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time I
turn-off time − 0.34 1.2 µs
1997 Apr 22 3
I
Con
Boff
= 5 A; I
= − 0.5 A
Bon
= 0.5 A;
− 0.2 0.6 µs