Philips BFX34 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BFX34
NPN switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors Product specification
NPN switching transistor BFX34
FEATURES
• High current (max. 2 A)
• Low voltage (max. 60 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High-current switching, e.g. inverters and switching
regulators.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a TO-39 metal package.
1
2
2
3
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
t
off
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 60 V
collector current (DC) − 2A
total power dissipation T
≤ 25 °C − 5W
case
DC current gain IC= 2 A; VCE= 2 V 40 150
transition frequency IC= 0.5 A; VCE= 5 V; f = 100 MHz 70 − MHz
turn-off time I
I
Con
Boff
= 5 A; I
= −0.5 A
Bon
= 0.5 A;
− 1.2 µs
3
1
1997 Apr 22 2
Philips Semiconductors Product specification
NPN switching transistor BFX34
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 60 V
emitter-base voltage open collector − 6V
collector current (DC) − 2A
peak collector current − 5A
peak base current − 1.5 A
total power dissipation T
≤ 25 °C − 5W
case
≤ 25 °C − 0.87 W
T
amb
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 200 K/W
thermal resistance from junction to case 35 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
V
C
FE
CEsat
BEsat
c
collector cut-off current IE= 0; VCB=60V −−10 µA
emitter cut-off current IC= 0; VEB=4V −−10 µA
DC current gain IC= 1 A; VCE=2V − 130 −
= 1.5 A; VCE= 0.6 V − 60 −
I
C
= 2 A; VCE= 2 V 40 110 150
I
C
collector-emitter saturation voltage IC= 5 A; IB= 0.5 A − 0.77 1 V
base-emitter saturation voltage IC= 5 A; IB= 0.5 A − 1.43 1.8 V
collector capacitance IE=ie= 0; VCB=10V;
− 36 − pF
f = 1 MHz
C
e
emitter capacitance IC=ic= 0; VEB= 0.5 V;
− 440 − pF
f = 1 MHz
f
T
transition frequency IC= 0.5 A; VCE=5V;
70 100 − MHz
f = 100 MHz
Switching times (between 10% and 90% levels)
t
on
t
off
turn-on time I
turn-off time − 0.34 1.2 µs
1997 Apr 22 3
I
Con
Boff
= 5 A; I
= − 0.5 A
Bon
= 0.5 A;
− 0.2 0.6 µs
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