Philips BFX30 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BFX30
PNP switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 16
Philips Semiconductors Product specification
PNP switching transistor BFX30
FEATURES
• High current (max.600 mA)
• Low voltage (max. 65 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• Switching applications.
DESCRIPTION
PNP transistor in a TO-39 metal package.
handbook, halfpage
1
2
3
MAM334
3
2
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
f
t
CBO
CEO
C
tot
FE
T
off
collector-base voltage open emitter −−−65 V
collector-emitter voltage open base −−−65 V
collector current (DC) −−−600 mA
total power dissipation T
≤ 25 °C −−600 mW
amb
DC current gain IC= −10 mA; VCE= −400 mV 50 90 200
transition frequency IC= −50 mA; VCE= −10 V; f = 100 MHz 100 −−MHz
turn-off time I
= −150 mA; I
Con
= −15 mA; I
Bon
=10mA −−300 ns
Boff
1997 Apr 16 2
Philips Semiconductors Product specification
PNP switching transistor BFX30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−65 V
collector-emitter voltage open base −−65 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−600 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 600 mW
amb
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 300 K/W
1997 Apr 16 3
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