Philips BFV469 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D100
BFV469
NPN high-voltage transistor
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 26
Philips Semiconductors Product specification
NPN high-voltage transistor BFV469
FEATURES
• High transition frequency
• Low feedback capacitance.
APPLICATIONS
• Buffer transistor in monitors.
DESCRIPTION
NPN high-voltage transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM254
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 140 V
collector-emitter voltage open base − 100 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 100 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 2W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 26 2
Philips Semiconductors Product specification
NPN high-voltage transistor BFV469
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-mb
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 100 K/W
thermal resistance from junction to mounting base 10 K/W
collector cut-off current IE= 0; VCB= 100 V − 100 nA
emitter cut-off current IC= 0; VEB=4V − 100 nA
DC current gain VCE= 10 V; see Fig.2
I
= 10 mA 150 −
C
=50mA 20 −
I
C
collector-emitter saturation voltage IC= 30 mA; IB=5mA − 200 mV
feedback capacitance IC=ic= 0; VCB= 25 V; f = 1 MHz − 1.5 pF
transition frequency IC= 20 mA; VCE= 20 V; f = 100 MHz 150 − MHz
400
handbook, full pagewidth
h
FE
300
200
100
0
−1
10
VCE=10V.
110
I
(mA)
C
Fig.2 DC current gain; typical values.
MGD846
2
10
1999 Apr 26 3
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