Philips BFV421 DATA SHEET
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BFV421
PNP high voltage transistor
Product specification
File under Discrete Semiconductors, SC04
1996 Dec 09
Philips Semiconductors Preliminary specification
PNP high voltage transistor BFV421
FEATURES
• High voltage
• High transition frequency
• Low output capacitance.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
APPLICATIONS
• Primarily intended for video applications (monitors).
DESCRIPTION
handbook, halfpage
PNP transistor in a plastic TO-92; SOT54 package.
1
2
3
1
NPN complement: BFV420.
MAM285
Fig.1 Simplified outline (TO-92; SOT54) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
C
f
CBO
CEO
CM
tot
FE
re
T
collector-base voltage open emitter −−140 V
collector-emitter voltage open base −−100 V
peak collector current −−100 mA
total power dissipation T
≤ 25 °C − 830 mW
amb
DC current gain IC= −10 mA; VCE= −10 V 150 −
feedback capacitance IC=ic= 0; VCE= −25 V; f = 1 MHz − 2.3 pF
transition frequency IC= −20 mA; VCE= −20 V; f = 100 MHz 150 − MHz
2
3
1996 Dec 09 2
Philips Semiconductors Product specification
PNP high voltage transistor BFV421
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−140 V
collector-emitter voltage open base −−100 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−100 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C − 830 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 150 K/W
Note
1. Transistor mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for collector lead minimum
10 × 10 mm.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
C
f
T
CEsat
re
collector cut-off current IE= 0; VCB= −100 V −−100 nA
= 0; VCB= −100 V; T
I
E
= 150 °C −−10 µA
amb
emitter cut-off current IC= 0; VEB= −4V −−100 nA
DC current gain IC= −10 mA; VCE= −10 V 150 −
= −50 mA; VCE= −10 V 20 −
I
C
collector-emitter saturation voltage IC= −30 mA; IB= −5mA −−200 mV
feedback capacitance IC=ic= 0; VCE= −25 V; f = 1 MHz − 2.3 pF
transition frequency IC= −20 mA; VCE= −20 V; f = 100 MHz 150 − MHz
1996 Dec 09 3
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