Philips bfu725f_n1 Datasheet

BFU725F/N1

NPN wideband silicon germanium RF transistor

Rev. 01 — 13 July 2009 Product data sheet

1. Product profile

1.1 General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.

CAUTION

1.2 Features

n Low noise high gain microwave transistor
n Noise figure (NF) = 0.7 dB at 5.8 GHz
n High maximum stable gain 27 dB at 1.8 GHz
n 110 GHz fT silicon germanium technology

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.

Such precautions are described in the
equivalent standards.

ANSI/ESD S20.20,IEC/ST 61340-5,JESD625-A

or

1.3 Applications

n 2nd LNA stage and mixer stage in DBS LNB’s
n Satellite radio
n Low noise amplifiers for microwave communications systems
n WLAN and CDMA applications
n Analog/digital cordless applications
n Ka band oscillators (DRO’s)

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
V
V
I
P
h

CBO
CEO
EBO

C

tot

FE

collector-base voltage open emitter - - 10 V
collector-emitter voltage open base - - 2.8 V
emitter-base voltage open collector - - 0.55 V
collector current - 25 40 mA
total power dissipation Tsp≤ 90 °C
DC current gain IC= 10 mA; VCE=2V;

T

=25°C

j

[1]

- - 136 mW
160 280 400

NXP Semiconductors

BFU725F/N1

NPN wideband silicon germanium RF transistor

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

C

CBS

collector-base
capacitance

f

T

G

p(max)

transition frequency IC= 25 mA; VCE=2V;

maximum power gain IC= 25 mA; VCE=2V;

NF noise figure I

[1] Tsp is the temperature at the solder point of the emitter lead.
[2] G

is the maximum power gain, if K > 1. If K < 1 then G

p(max)

2. Pinning information

Table 2. Discrete pinning

Pin Description Simplified outline Graphic symbol

1 emitter
2 base
3 emitter
4 collector

…continued

VCB= 2 V; f = 1 MHz - 70 - fF

- 55 - GHz

f = 2 GHz; T

f = 5.8 GHz; T

= 5 mA; VCE=2V;

C

f = 5.8 GHz; Γ
T

=25°C

amb

amb

=25°C

amb

= Γ

S

[2]

-18- dB

=25°C

- 0.7 - dB

;

opt

= Maximum Stable Gain (MSG).

p(max)

34

12

2

mbb159

4

1, 3

3. Ordering information

Table 3. Ordering information

Type number Package

BFU725F/N1 - plastic surface-mounted flat pack package; reverse

4. Marking

Table 4. Marking

Type number Marking Description

BFU725F/N1 B7* * = p : made in Hong Kong

Name Description Version

SOT343F

pinning; 4 leads

* = t : made in Malaysia
* = W : made in China

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 July 2009 2 of 11

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

[1] Tsp is the temperature at the solder point of the emitter lead.

collector-base voltage open emitter - 10 V
collector-emitter voltage open base - 2.8 V
emitter-base voltage open collector - 0.55 V
collector current - 40 mA
total power dissipation Tsp≤ 90 °C
storage temperature −65 +150 °C
junction temperature - 150 °C

6. Thermal characteristics

BFU725F/N1

NPN wideband silicon germanium RF transistor

[1]

- 136 mW

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction to solder point 440 K/W

200

P

tot

(mW)

150

100

50

0

0 16012040 80

001aah424

Tsp (°C)

Fig 1. Power derating curve

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 July 2009 3 of 11

NXP Semiconductors

BFU725F/N1

NPN wideband silicon germanium RF transistor

7. Characteristics

Table 7. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)CBO

collector-base breakdown
voltage

V

(BR)CEO

collector-emitter breakdown
voltage

I

C

I

CBO

h
C
C
C
f

T

G

|s

FE

CES
EBS
CBS

p(max)

21

collector current -2540mA
collector-base cut-off current IE= 0 mA; VCB= 4.5 V - - 100 nA
DC current gain IC= 10 mA; VCE= 2 V 160 280 400
collector-emitter capacitance VCB= 2 V; f = 1 MHz - 268 - fF
emitter-base capacitance VEB= 0.5 V; f = 1 MHz - 400 - fF
collector-base capacitance VCB= 2 V; f = 1 MHz - 70 - fF
transition frequency IC= 25 mA; VCE= 2 V; f = 2 GHz; T
maximum power gain IC= 25 mA; VCE=2V; T

2

|

insertion power gain IC= 25 mA; VCE=2V; T

NF noise figure I

G

ass

associated gain IC= 5 mA; VCE=2V;ΓS= Γ

IC= 2.5 µA; IE= 0 mA 10 - - V

IC= 1 mA; IB= 0 mA 2.8 - - V

=25°C - 55 - GHz

amb

amb

=25°C

[1]

f = 1.5 GHz - 28 - dB
f = 1.8 GHz - 27 - dB
f = 2.4 GHz - 25.5 - dB
f = 5.8 GHz - 18 - dB
f = 12 GHz - 13 - dB

=25°C

amb

f = 1.5 GHz - 26.7 - dB
f = 1.8 GHz - 25.4 - dB
f = 2.4 GHz - 23 - dB
f = 5.8 GHz - 16 - dB
f = 12 GHz - 9.3 - dB

= 5 mA; VCE=2V;ΓS= Γ

C

opt

; T

amb

=25°C
f = 1.5 GHz - 0.42 - dB
f = 1.8 GHz - 0.43 - dB
f = 2.4 GHz - 0.47 - dB
f = 5.8 GHz - 0.7 - dB
f = 12 GHz - 1.1 - dB

; T

amb

=25°C

opt

f = 1.5 GHz - 24 - dB
f = 1.8 GHz - 22 - dB
f = 2.4 GHz - 20 - dB
f = 5.8 GHz - 13.5 - dB
f = 12 GHz - 10 - dB

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 July 2009 4 of 11

NXP Semiconductors

BFU725F/N1

NPN wideband silicon germanium RF transistor

Table 7. Characteristics

…continued

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

P

L(1dB)

output power at 1 dB gain
compression

IC= 25 mA; VCE=2V; ZS=ZL=50Ω; T

amb

=25°C
f = 1.5 GHz - 8.5 - dBm
f = 1.8 GHz - 9 - dBm
f = 2.4 GHz - 8.5 - dBm
f = 5.8 GHz - 8 - dBm

IP3 third-order intercept point I

[1] G

is the maximum power gain, if K > 1. If K < 1 then G

p(max)

30

I

C

(mA)

20

10

= 25 mA; VCE=2V; ZS=ZL=50Ω; T

C

f

+ 1 MHz

2=f1

= 1.5 GHz - 17 - dBm

f

1

= 1.8 GHz - 17 - dBm

f

1

= 2.4 GHz - 17 - dBm

f

1

= 5.8 GHz - 19 - dBm

f

1

= MSG.

p(max)

001aak271

(1)
(2)

(3)
(4)
(5)
(6)

(7)
(8)
(9)

(10)

(11)

400

h

FE

350

300

250

amb

=25°C;

001aak272

(1)
(2)
(3)

0

0 2.50.5 2.0 3.01.51.0 3.5

T

=25°C.

amb

(1) IB= 110 µA
(2) IB= 100 µA
(3) IB=90µA

VCE (V)

200

0302010

T

=25°C.

amb

(1) VCE=1V
(2) VCE = 1.5 V
(3) VCE=2V

IC (mA)

(4) IB=80µA
(5) IB=70µA
(6) IB=60µA
(7) IB=50µA
(8) IB=40µA

(9) IB=30µA
(10) IB=20µA
(11) IB=10µA

Fig 2. Collector current as a function of

collector-emitter voltage; typical values

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Fig 3. DC current gain a function of collector current;

typical values

Product data sheet Rev. 01 — 13 July 2009 5 of 11

NXP Semiconductors

BFU725F/N1

NPN wideband silicon germanium RF transistor

160

C

CBS

(fF)

120

80

40

0

01284

f = 1 MHz, T

=25°C. VCE= 2 V; f = 2 GHz; T

amb

001aah427

VCB (V)

Fig 4. Collector-base capacitance as a function of

collector-base voltage; typical values

2

10

G

(dB)

60

f

T

(GHz)

40

20

0

0403010 20

amb

=25°C.

001aak273

IC (mA)

Fig 5. Transition frequency as a function of collector

current; typical values

001aah429

(1)
(2)
(3)

MSG

MSG

10

1

−1

10

VCE=2V; T

amb

=25°C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz

Fig 6. Gain as a function of collector current; typical value

(4)

G

max

G

max

(5)

2

101

IC (mA)

10

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 July 2009 6 of 11

NXP Semiconductors

BFU725F/N1

NPN wideband silicon germanium RF transistor

50

G

(dB)

40

30

IS21I

20

10

0

−2

10

VCE=2V; IC= 5 mA; T

MSG

001aah430

2

G

p(max)

MSG

−1

1

amb

1010

f (GHz)

=25°C. VCE=2V; IC= 25 mA; T

2

10

G

(dB)

50

MSG

40

2

IS21I

30

20

10

0

−2

10

−1

1

=25°C.

amb

G

1010

p(max)

001aah431

MSG

f (GHz)

2

10

Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values

NF

(dB)

min

2.0

1.6

1.2

001aah432

(1)

(2)

NF

(dB)

2.0

min

1.6

1.2

001aah433

(1)

(2)

0.8

(3)
(4)

0.4

0

0302010

VCE=2V; T

amb

=25°C.

(5)

IC (mA)

(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz

Fig 9. Minimum noise figure as a function of

collector current; typical values

0.8

0.4

0

0161248

VCE=2V; T

amb

=25°C.

f (GHz)

(1) IC=25mA
(2) IC=5mA

Fig 10. Minimum noise figure as a function of

frequency; typical values

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 July 2009 7 of 11

NXP Semiconductors

8. Package outline

BFU725F/N1

NPN wideband silicon germanium RF transistor

Plastic surface-mounted flat pack package; reverse pinning; 4 leads

D

y

e

34

A

SOT343F

E

H

E

A

X

M

wA

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

OUTLINE
VERSION

SOT343F

max

0.75

0.65

b

0.4

0.3

p

b

p

b

c D E e e1H

1

0.7

0.25

0.5

0.10

IEC JEDEC JEITA

Fig 11. Package outline SOT343F

2.2

1.8

c

L

detail X

EUROPEAN

PROJECTION

p

ISSUE DATE

05-07-12

06-03-16

12

b

1

e

1

0 1 2 mm

1.35

1.15

REFERENCES

1.151.3

M

wA

scale

E

2.2

2.0

Lpw y

0.48

0.38

0.10.2

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 July 2009 8 of 11

NXP Semiconductors

9. Abbreviations

Table 8. Abbreviations

Acronym Description

CDMA Code Division Multiple Access
DBS Direct Broadcast Satellite
DC Direct Current
DRO Dielectric Resonator Oscillator
LNA Low Noise Amplifier
LNB Low Noise Block
Ka Kurtz above
NPN Negative-Positive-Negative
RF Radio Frequency
WLAN Wireless Local Area Network

10. Revision history

BFU725F/N1

NPN wideband silicon germanium RF transistor

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFU725F_N1_1 20090713 Product data sheet - -

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 July 2009 9 of 11

NXP Semiconductors

11. Legal information

11.1 Data sheet status

BFU725F/N1

NPN wideband silicon germanium RF transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document waspublished and may differin case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall have no liabilityfor the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s) and title. A short data sheet isintended
for quickreference only and should not be relied upon to contain detailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or
warranties, expressed or implied, as tothe accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) maycause permanent
damage to the device. Limiting values are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: Allreferenced brands,product names, servicenames and trademarks
are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BFU725F_N1_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 13 July 2009 10 of 11

NXP Semiconductors

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Contact information. . . . . . . . . . . . . . . . . . . . . 10

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

BFU725F/N1

NPN wideband silicon germanium RF transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 13 July 2009

Document identifier: BFU725F_N1_1