Philips bfu610f Datasheet

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BFU610F

NPN wideband silicon RF transistor

Rev. 2 — 11 January 2011 Product data sheet

1. Product profile

1.1 General description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION

1.2 Features and benefits

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.

 Low noise high gain microwave transistor  Noise figure (NF) = 1.7 dB at 5.8 GHz  High associated gain 13.5 dB at 5.8 GHz  40 GHz f

silicon technology

1.3 Applications

 Low current battery equipped applications  Low noise amplifiers for microwave communications systems  Analog/digital cordless applications  RKE  AMR  GPS  ZigBee  LTE, cellular, UMTS  FM radio  Mobile TV  Bluetooth

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NXP Semiconductors

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CBO

CEO

EBO

tot

CBS

p(max)

NF noise figure I

L(1dB)

[1] Tsp is the temperature at the solder point of the emitter lead. [2] G

BFU610F

NPN wideband silicon RF transistor

collector-base voltage open emitter - - 16 V collector-emitter voltage open base - - 5.5 V emitter-base voltage open collector - - 2.5 V collector current - 2 10 mA total power dissipation Tsp≤ 90 °C DC current gain IC=1mA; VCE=2V;

=25°C

collector-base

VCB=2V; f=1MHz - 19 - fF

capacitance transition frequency IC=4mA; VCE=2V;

f=2GHz; T

maximum power gain IC=5mA; VCE=2V;

f=5.8GHz; T

=2mA; VCE=2V;

f=5.8GHz; ΓS= Γ

=25°C

amb

output power at 1 dB gain compression

IC=10mA; VCE=1.5V; ZS=ZL=50Ω; f=5.8GHz; T

is the maximum power gain, if K > 1. If K < 1 then G

p(max)

amb

=25°C

amb

=25°C

;

opt

=25°C

p(max)

[1]

- - 136 mW 90 135 180

-15- GHz

[2]

- 17.0 - dB

-1.7- dB

-3 - dBm

= Maximum Stable Gain (MSG).

2. Pinning information

Table 2. Discrete pinning

Pin Description Simplified outline Graphic symbol

1emitter 2base 3emitter 4 collector

3. Ordering information

Table 3. Ordering information

Type number Package

BFU610F - plastic surface-mounted flat pack package; reverse

1, 3

mbb15

Name Description Version

SOT343F

pinning; 4 leads

Product data sheet Rev. 2 — 11 January 2011 2 of 12

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NXP Semiconductors

001aam802

4. Marking

Table 4. Marking

Type number Marking Description

BFU610F D1* * = p : made in Hong Kong

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

[1] Tsp is the temperature at the solder point of the emitter lead.

BFU610F

NPN wideband silicon RF transistor

* = t : made in Malaysia * = w : made in China

collector-base voltage open emitter - 16 V collector-emitter voltage open base - 5.5 V emitter-base voltage open collector - 2.5 V collector current - 10 mA total power dissipation Tsp≤ 90 °C storage temperature −65 +150 °C junction temperature - 150 °C

[1]

- 136 mW

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-sp)

thermal resistance from junction to solder point 440 K/W

200

tot

(mW)

150

100

0 16012040 80

Tsp (°C)

Fig 1. Power derating curve

Product data sheet Rev. 2 — 11 January 2011 3 of 12

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NXP Semiconductors

7. Characteristics

BFU610F

NPN wideband silicon RF transistor

Table 7. Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

(BR)CBO

(BR)CEO

CBO

CES

EBS

CBS

p(max)

collector-base breakdown voltage IC=2.5μA; IE=0mA 16 - - V collector-emitter breakdown voltage IC=1mA; IB=0mA 5.5 - - V collector current - 2 10 mA collector-base cut-off current IE=0mA; VCB= 8 V - - 100 nA DC current gain IC=1mA; VCE= 2 V 90 135 180 collector-emitter capacitance VCB= 2 V; f = 1 MHz - 187 - fF emitter-base capacitance VEB= 0.5 V; f = 1 MHz - 227 - fF collector-base capacitance VCB=2V; f=1MHz - 19 - fF transition frequency IC=4mA; VCE= 2 V; f = 2 GHz;

=25°C

amb

maximum power gain IC=5mA; VCE=2V; T

amb

=25°C

-15- GHz

[1]

f = 1.5 GHz - 26 - dB f = 1.8 GHz - 25 - dB f = 2.4 GHz - 24 - dB f = 5.8 GHz - 17 - dB

insertion power gain IC=5mA; VCE=2V; T

amb

=25°C f = 1.5 GHz - 17.5 - dB f = 1.8 GHz - 17 - dB f = 2.4 GHz - 16 - dB f = 5.8 GHz - 10.5 - dB

NF noise figure I

=2mA; VCE=2V; ΓS= Γ

=25°C

amb

opt

;

f=1.5GHz - 0.9 - dB f = 1.8 GHz - 0.95 - dB f=2.4GHz - 1.1 - dB f=5.8GHz - 1.7 - dB

ass

associated gain IC=2mA; VCE=2V; ΓS= Γ

=25°C

amb

opt

;

f = 1.5 GHz - 23.5 - dB f = 1.8 GHz - 23 - dB f = 2.4 GHz - 20.5 - dB f = 5.8 GHz - 13.5 - dB

L(1dB)

output power at 1 dB ga in compression IC=10mA; VCE=1.5V;

ZS=ZL=50Ω; T

amb

=25°C f=1.5GHz - 3.5 - dBm f=1.8GHz - 3 - dBm f=2.4GHz - 3 - dBm f=5.8GHz - 3 - dBm

Product data sheet Rev. 2 — 11 January 2011 4 of 12

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NXP Semiconductors

001aam803

001aam804

BFU610F

NPN wideband silicon RF transistor

Table 7. Characteristics

…continued

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

IP3 third-order intercept point IC=10mA; VCE=1.5V;

ZS=ZL=50Ω; T

amb

=25°C f = 1.5 GHz - 14.5 - dBm f = 1.8 GHz - 15 - dBm f = 2.4 GHz - 15 - dBm f = 5.8 GHz - 18 - dBm

[1] G

is the maximum power gain, if K > 1. If K < 1 then G

p(max)

(mA)

=MSG.

p(max)

200

(1)

(2)

(3)

(4)

(5)

(6)

150

100

(1) I (2) I (3) I (4) I (5) I (6) I

054231

=25°C.

amb

=60μA

=50μA

=40μA

=30μA

=20μA

=10μA

VCE (V)

Fig 2. Collector current as a function of

collector-emitter voltage; typical values

0108462

= 2 V; T

amb

=25°C.

IC (mA)

Fig 3. DC current gain as a function of collector

current; typical values

Product data sheet Rev. 2 — 11 January 2011 5 of 12

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NXP Semiconductors

001aam805

001aam806

BFU610F

NPN wideband silicon RF transistor

CBS

(fF)

01284

f=1MHz, T

amb

=25°C. VCE= 2 V; f = 2 GHz; T

VCB (V)

Fig 4. Collector-base capacitance as a function of

collector-base voltage; typical values

(dB)

MSG

(GHz)

02015510

=25°C.

amb

IC (mA)

Fig 5. Transition frequency as a function of collector

current; typical values

001aam807

VCE=2V; T

amb

=25°C.

02015510

(1) (2) (3)

(4)

(5)

(1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 5.8 GHz (5) f = 12 GHz

Fig 6. Gain as a function of collector current; typical value

p(max)

IC (mA)

Product data sheet Rev. 2 — 11 January 2011 6 of 12

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NXP Semiconductors

BFU610F

NPN wideband silicon RF transistor

(dB)

MSG

|S21|

0252010 155

VCE=2V; IC=1mA; T

001aam808

p(max)

f (GHz)

=25°C. VCE=2V; IC=5mA; T

amb

(dB)

|S21|

0252010 155

MSG

p(max)

=25°C.

amb

001aam809

f (GHz)

Fig 7. Gain as a function of frequency; typical values F ig 8. Gain as a function of frequency; typical values

001aam811

(dB)

min

(1)

001aam810

(2)

(3)

(4)

(dB)

2.0

min

1.5

1.0

0.5

0108462

VCE=2V; T

amb

IC (mA)

=25°C.

0642

=2V; IC = 2 mA; T

amb

f (GHz)

=25°C. (1) f = 5.8 GHz (2) f = 2.4 GHz (3) f = 1.8 GHz (4) f = 1.5 GHz

Fig 9. Minimum noise figure as a function of

collector current; typical values

Fig 10. Minimum noise figure as a function of

frequency; typical values

Product data sheet Rev. 2 — 11 January 2011 7 of 12

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NXP Semiconductors

8. Package outline

BFU610F

NPN wideband silicon RF transistor

lastic surface-mounted flat pack package; reverse pinning; 4 leads

SOT343

DIMENSIONS (mm are the original dimensions)

UNIT

OUTLINE VERSION

SOT343F

max

0.75

0.65

0.4

0.3

c D E e e1H

0.7

0.25

0.5

0.10

IEC JEDEC JEITA

Fig 11. Package outline SOT343F

2.2

1.8

detail X

EUROPEAN

PROJECTION

ISSUE DATE

05-07-12

06-03-16

0 1 2 mm

1.35

1.15

REFERENCES

1.151.3

scale

2.2

2.0

Lpw y

0.48

0.38

0.10.2

Product data sheet Rev. 2 — 11 January 2011 8 of 12

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NXP Semiconductors

9. Abbreviations

Table 8. Abbreviations

Acronym Description

AMR Automatic Meter Reading DC Direct Current DRO Dielectric Resonator Oscillator FM Frequency Modulation GPS Global Positioning System Ka Kurtz above LTE Long Term Evolution NPN Negative-Positive-Negative RF Radio Frequency RKE Remote Keyless Entry UMTS Universal Mobile Telecommunications System

BFU610F

NPN wideband silicon RF transistor

10. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFU610F v.2 20110111 Product data sheet - BFU610F v.1 BFU610F v.1 20100617 Objective data sheet - -

Product data sheet Rev. 2 — 11 January 2011 9 of 12

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NXP Semiconductors

BFU610F

NPN wideband silicon RF transistor

11. Legal information

11.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

11.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 2 — 11 January 2011 10 of 12

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NXP Semiconductors

BFU610F

NPN wideband silicon RF transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 2 — 11 January 2011 11 of 12

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NXP Semiconductors

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Contact information. . . . . . . . . . . . . . . . . . . . . 11

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BFU610F

NPN wideband silicon RF transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 11 January 2011

Document identifier: BFU610F