Philips BFT92W Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFT92W
PNP 4 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
May 1994
Philips Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
FEATURES
• High power gain
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
PIN DESCRIPTION
base
1
emitter
2
collector
3
handbook, 2 columns
Top view
Marking code: W1.
Fig.1 SOT323.
3
12
MBC870
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
C
f
CBO
CEO
C
tot
FE
re
T
collector-base voltage open emitter −−−20 V
collector-emitter voltage open base −−−15 V
collector current (DC) −−−35 mA
total power dissipation up to Ts=93°C; note 1 −−300 mW
DC current gain IC= −15 mA; VCE= −10 V 20 50 −
feedback capacitance IC= 0; VCB= −10 V; f = 1 MHz − 0.5 − pF
transition frequency IC= −15 mA; VCE= −10 V;
− 4 − GHz
f = 500 MHz
G
UM
F noise figure I
maximum unilateral power gain IC= −15 mA; VCE= −10 V;
f = 500 MHz; T
= −5 mA; VCE= −10 V;
C
amb
=25°C
− 17 − dB
− 2.5 − dB
f = 500 MHz
T
j
junction temperature −−150 °C
Note
1. Ts is the temperature at the soldering point of the collector pin.
May 1994 2
Philips Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
emitter-base voltage open collector −−2V
collector current (DC) −−25 mA
total power dissipation up to Ts=93°C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 150 °C
thermal resistance from junction to soldering point up to Ts=93°C; note 1 190 K/W
Note to the “Limiting values” and “Thermal characteristics”
1. T
is the temperature at the soldering point of the collector pin.
s
CHARACTERISTICS
=25°C (unless otherwise specified).
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
f
T
C
FE
c
collector cut-off current IE= 0; VCB= −10 V −−−50 nA
DC current gain IC= −15 mA; VCE= −10 V 20 50 −
transition frequency IC= −15 mA; VCE= −10 V;
f = 500 MHz; T
amb
=25°C
collector capacitance IE=ie= 0; VCB= −10 V;
− 4 − GHz
− 0.65 − pF
f = 1 MHz
C
e
emitter capacitance IC=ic= 0; VEB= −0.5 V;
− 0.75 − pF
f = 1 MHz
C
re
feedback capacitance IC= 0; VCB= −10 V;
− 0.5 − pF
f = 1 MHz
G
UM
maximum unilateral power gain;
note 1
F noise figure Γ
IC= −15 mA; VCE= −10 V;
f = 500 MHz; T
I
= −15 mA; VCE= −10 V;
C
f = 1 GHz; T
= Γ
; IC= −5 mA;
s
opt
amb
=25°C
amb
=25°C
− 17 − dB
− 11 − dB
− 2.5 − dB
VCE= −10 V; f = 500 MHz
= Γ
s
; IC= −5 mA;
opt
Γ
− 3 − dB
VCE= −10 V; f = 1 GHz
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero.
UM
May 1994 3
2
s
G
UM
10
-----------------------------------------------------------1s
–()1s
21
2
11
–()
dB.log=
2
22
Philips Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
400
P
tot
(mW)
300
200
100
0
0 50 100 200
Fig.2 Power derating curve.
150
MLB540
o
T ( C)
s
60
h
FE
40
20
0
0
VCE= −10V; Tj=25°C.
10 20
MLB541
I (mA)
C
Fig.3 DC current gain as a function of collector
current, typical values.
30
1
C
re
(pF)
0.8
0.6
0.4
0.2
0
0
IC= 0; f = 1 MHz.
48
12 16
V (V)
CB
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
MLB542
CE
10 V
5 V
I (mA)
C
MLB543
2
10
6
f
T
(GHz)
4
2
20
0
f = 500 MHz; T
amb
=25°C.
V =
101
Fig.5 Transition frequency as a function of
collector current, typical values.
May 1994 4
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