Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BFT46
N-channel silicon FET
Product specification December 1997
Page 2
NXP Semiconductors Product specification
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
N-channel silicon FET BFT46
DESCRIPTION
Symmetrical n-channel silicon
epitaxial planar junction field-effect
transistor in a microminiature plastic
envelope. The transistor is intended
for low level general purpose
amplifiers in thick and thin-film
circuits.
PINNING
1 = drain
2 = source
3=gate
Note : Drain and source are
interchangeable.
Marking code
BFT46 = M3p
QUICK REFERENCE DATA
Drain-source voltage V
Gate-source voltage (open drain) V
Total power dissipation up to T
=40CP
amb
Drain current
=10V; VGS=0
V
DS
Transfer admittance (common source)
I
= 0,2 mA; VDS= 10 V; f = 1 kHz y
D
Equivalent noise voltage
=10 V; ID=200 A; B = 0,6 to 100 Hz V
V
DS
DS
GSO
tot
I
DSS
0,5 mS
fs
n
max. 25 V
max. 25 V
max. 250 mW
0,2 mA
1,5 mA
0,5 V
December 1997 2
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NXP Semiconductors Product specification
N-channel silicon FET BFT46
RATINGS
Limiting values in accordance with the Absolute Maximum Sys t em (IEC 134)
Drain-source voltage V
Drain-gate voltage (open source) V
Gate-source voltage (open drain) V
Drain current I
Gate current I
Total power dissipation up to T
amb
=40C
(1)
Storage temperature range T
Junction temperature T
THERMAL RESISTANCE
From junction to ambient
(1)
Note
1. Mounted on a ce ramic substrate of 8 mm 10 mm 0,7 mm.
P
R
DS
DGO
GSO
D
G
tot
stg
j
th j-a
max. 25 V
max. 25 V
max. 25 V
max. 10 mA
max. 5 mA
max. 250 mW
65 to 150 C
max. 150 C
=430K/W
CHARACTERISTICS
T
=25 C unless otherwise specified
j
Gate cut-off current
=10V; VDS=0 I
V
GS
Drain current
V
=10V; VGS=0
DS
Gate-source voltage
=50 A; VDS=10 V
I
D
Gate-source cut-off voltage
I
= 0,5 nA; VDS=10V V
D
y-parameters at f = 1 kHz;
=10 V; VGS=0; T
V
DS
amb
=25C
Transfer admittance y
Output admittance y
=10V; ID=200 A; T
V
DS
amb
=25C
Transfer admittance y
Output admittance y
Input capacitance at f = 1 MHz;
=10V; VGS=0; T
V
DS
=25CC
amb
Feedback capacitance at f = 1 MHz;
=10V; VGS=0; T
V
DS
=25CC
amb
Equivalent noise voltage
V
=10V; ID=200 A; T
DS
amb
=25C
B = 0,6 to 100 Hz V
GSS
I
DSS
V
GS
(P)GS
1,0 mS
fs
10 S
os
0,5 mS
fs
5 S
os
is
rs
n
0,2 nA
0,2 mA
1,5 mA
0,1 V
1,0 V
1,2 V
5pF
1,5 pF
0,5 V
December 1997 3
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NXP Semiconductors Product specification
Fig.2 Power derating curve.
handbook, halfpage
0
T
amb
(°C)
P
tot
(mW)
300
200
100
0
40 200
80 120 160
MDA245
Fig.3 Typical values. VDS=10 V; Tj=25C.
handbook, full pagewidth
20
1.5
0.75
1
1.25
0.5
0.25
0
−1.25 −1 151050−0.25
−0.5−0.75
MDA272
VDS (V)
VGS (V)
I
D
(mA)
− 0.1 V
− 0.2 V
− 0.3 V
− 0.4 V
VGS = 0 V
max
typ
min
N-channel silicon FET BFT46
December 1997 4
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NXP Semiconductors Product specification
Fig.4 Typical values. VDS=10V.
handbook, halfpage
0
0.3 V
50
I
D
(mA)
100 150
1
0.75
0.25
0
0.5
MDA273
Tj (°C)
− VGS = 0 V
0.1 V
0.2 V
Fig.5 Correlation between V
(P)GS
and I
DSS
.
V
DS
=10 V; Tj=25C.
handbook, halfpage
0
typ
0.5
−V
(P)GS
(V) at
ID = 0.5 nA
1 1.5
1.25
1
0.5
0.25
0.75
MDA274
I
DSS
(mA) at VGS = 0
Fig.6 yfs versus ID. VDS= 10 V; f = 1 kHz;
T
amb
= 25 C.
0
typ
ID (mA)
|y
fs
|
(mS)
3
2
1
0
0.25 0.5 0.75
MDA269
Fig.7 yos versus ID. VDS=10 V; f=1 kHz;
T
amb
= 25 C.
handbook, halfpage
0
typ
0.25
|y
os
|
(mS)
ID (mA)
0.5 0.75
5
0
4
3
2
1
MDA270
N-channel silicon FET BFT46
December 1997 5
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NXP Semiconductors Product specification
Fig.8 yos versus VDS. ID= 0,4 mA; f = 1 kHz;
T
amb
= 25 C.
handbook, halfpage
3001020
VDS (V)
10
3
10
2
10
1
MDA271
|y
os
|
(μA/V)
typ
Fig.9 Typical values. VDS=10 V; T
amb
=25 C.
handbook, halfpage
0
VGS (V)
C
is
(pF)
6
4
2
0
−1 −2 −4
−3
MDA266
Fig.10 Typical values. VDS=10 V, T
amb
= 25 C.
handbook, halfpage
0
VGS (V)
C
rs
(pF)
1.5
1
0.5
0
−1 −2 −4
−3
MDA267
Fig.11 I
GSS
versus Tj. V
GSS
=10V; VDS=0.
handbook, halfpage
15010050
I
GSS
(nA)
0
typ
10
1
10
−1
10
−2
10
−3
MDA268
Tj (°C)
N-channel silicon FET BFT46
December 1997 6
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NXP Semiconductors Product specification
Fig.12 VDS=10V; ID= 0,2 mA; T
amb
=25C.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10
typ
10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA264
e
n
(nV/ Hz)
Fig.13 VDS=10V; ID= 0,2 mA; T
amb
=25C.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10 10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA265
typ
i
n
(fA/ Hz)
N-channel silicon FET BFT46
December 1997 7
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NXP Semiconductors Product specification
UNIT
A
1
max.
b
p
cD
E
e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
b
p
D
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
w M
v M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
N-channel silicon FET BFT46
PACKAGE OUTLINE
December 1997 8
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NXP Semiconductors Product specification
N-channel silicon FET BFT46
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Pr od uction This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this documen t may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication he reof.
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Applications Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.
December 1997 9
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NXP Semiconductors Product specification
N-channel silicon FET BFT46
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
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Semiconductors hereby expressly objects to applying the
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Export control This document as well as the item(s)
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Quick reference data The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
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and use in automotive applications to automotive
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December 1997 10
Page 11
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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The information presented in this document does not form part of any quotation or cont ra ct, is b elieve d to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R77/02/pp11 Date of release: December 1997
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