Philips BFT46 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFT46

N-channel silicon FET

Product specification
File under Discrete Semiconductors, SC07

December 1997

Philips Semiconductors Product specification

N-channel silicon FET BFT46

DESCRIPTION

Symmetrical n-channel silicon
epitaxial planar junction field-effect
transistor in a microminiature plastic
envelope. The transistor is intended
for low level general purpose
amplifiers in thick and thin-film
circuits.

PINNING

1 = drain
2 = source
3 = gate

handbook, halfpage

12

Top view

3

g

MAM385

d
s

Note : Drain and source are

Fig.1 Simplified outline and symbol, SOT23.

interchangeable.

Marking code

BFT46 = M3p

QUICK REFERENCE DATA

Drain-source voltage ±V
Gate-source voltage (open drain) −V
Total power dissipation up to T

=40°CP

amb

DS
GSO

tot

max. 25 V
max. 25 V
max. 250 mW

Drain current

VDS= 10 V; VGS=0

I

DSS

> 0,2 mA
< 1,5 mA

Transfer admittance (common source)

I

= 0,2 mA; VDS= 10 V; f = 1 kHz  yfs>0,5 mS

D

Equivalent noise voltage

= 10 V; ID= 200 µA; B = 0,6 to 100 Hz V

V

DS

n

< 0,5 µV

December 1997 2

Philips Semiconductors Product specification

N-channel silicon FET BFT46

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage ±V
Drain-gate voltage (open source) V
Gate-source voltage (open drain) −V
Drain current I
Gate current I
Total power dissipation up to T

amb

=40°C

(1)

Storage temperature range T
Junction temperature T

THERMAL RESISTANCE

From junction to ambient

(1)

Note

1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm.

P

R

DS

DGO

GSO
D
G

tot
stg
j

th j-a

max. 25 V
max. 25 V
max. 25 V
max. 10 mA
max. 5 mA
max. 250 mW

−65 to +150 °C

max. 150 °C

= 430 K/W

CHARACTERISTICS

=25°C unless otherwise specified

T

j

Gate cut-off current

−V

= 10 V; VDS=0 −I

GS

Drain current

VDS= 10 V; VGS=0

Gate-source voltage

I

=50µA; VDS= 10 V

D

Gate-source cut-off voltage

I

= 0,5 nA; VDS=10V −V

D

y-parameters at f = 1 kHz;

V

= 10 V; VGS= 0; T

DS

amb

=25°C
Transfer admittance  y
Output admittance  y
V

= 10 V; ID= 200 µA; T

DS

amb

=25°C
Transfer admittance  y
Output admittance  y

Input capacitance at f = 1 MHz;

V

= 10 V; VGS= 0; T

DS

=25°CC

amb

Feedback capacitance at f = 1 MHz;

= 10 V; VGS= 0; T

V

DS

=25°CC

amb

Equivalent noise voltage

V

= 10 V; ID= 200 µA; T

DS

amb

=25°C
B = 0,6 to 100 Hz V

GSS

I

DSS

−V

GS

(P)GS

>1,0 mS

fs

<10 µS

os

>0,5 mS

fs

<5µS

os

is

rs

n

< 0,2 nA

> 0,2 mA
< 1,5 mA

> 0,1 V
< 1,0 V

< 1,2 V

< 5pF

< 1,5 pF

< 0,5 µV

December 1997 3