Philips bft45 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BFT45
PNP high-voltage transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 18
Philips Semiconductors Product specification
PNP high-voltage transistor BFT45
FEATURES
• Low current (max. 500 mA)
• High voltage (max. 250 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High voltage switching and amplification
• Industrial and telephone applications.
handbook, halfpage
1
2
3
DESCRIPTION
MAM334
2
1
PNP high-voltage transistor in a TO-39 metal package.
3
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
C
c
f
T
collector-base voltage open emitter −−−250 V
collector-emitter voltage open base −−−250 V
peak collector current −−−1A
total power dissipation T
≤ 50 °C −−5W
case
DC current gain IC= −10 mA; VCE= −10 V 50 − 150
collector capacitance IE=ie= 0; VCE= −20 V; f = 1 MHz −−15 pF
transition frequency IC= −15 mA; VCE= −10 V; f = 100 MHz − 70 − MHz
1997 Apr 18 2
Philips Semiconductors Product specification
PNP high-voltage transistor BFT45
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−250 V
collector-emitter voltage open base −−250 V
emitter-base voltage open collector −−5V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−200 mA
total power dissipation T
≤ 50 °C − 5W
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 200 K/W
thermal resistance from junction to case 30 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
collector cut-off current IE= 0; VCB= −200 V −−−5µA
emitter cut-off current IC= 0; VEB= −3V −−−5µA
DC current gain IC= −1 mA; VCE= −10 V 30 −−
=−10 mA; VCE= −10 V 50 − 150
I
C
= −100 mA; VCE= −10 V; note 1 50 −−
I
C
collector-emitter saturation voltage IC= −10 mA; IB= −1mA −−−0.5 V
= −100 mA; IB= −10 mA −−−1.4 V
I
C
I
= −500 mA; IB= −100 mA; note 1 −−−3V
C
base-emitter saturation voltage IC= −10 mA; IB= −1mA −−−0.5 V
= −100 mA; IB= −10 mA −−−0.9 V
I
C
= −500 mA; IB= −100 mA; note 1 −−−1.2 V
I
C
collector capacitance IE=ie= 0; VCB= −20 V; f = 1 MHz −−15 pF
transition frequency IC= −15 mA; VCE= −10 V; f = 100 MHz − 70 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1997 Apr 18 3
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